Abstract: In accordance with one embodiment of the present invention, the ion-beam apparatus takes the form of a gridless ion source with a hot-filament cathode-neutralizer, in which the hot filament is heated with a current from the cathode-neutralizer heater. The cathode-neutralizer is connected to the negative terminal of the discharge supply for the gridless ion source. This connection is substantially isolated from ground (the potential of the surrounding vacuum chamber, which is usually at earth ground) and its potential is measured relative to ground. The heater current to the cathode-neutralizer is controlled by adjusting it so as to maintain this potential in a narrow operating range. This control can be manual or automatic.

Abstract: In accordance with one specific embodiment of the present invention, a Hall-current ion source of the end-Hall type has an anode that is contoured with one or more recesses in the electron-collecting surface which have areas that are protected from the deposition of externally generated contamination thereon, as well as one or more protrusions that have higher temperatures than the bulk of the anode, thereby increasing the removal or passivation of coatings during operation by the thermal degradation of the coating and the effects of thermomechanical stresses.

Abstract: In accordance with an embodiment of the present invention, apparatus for ion-assisted magnetron deposition takes a form that includes a magnetron, a deposition substrate displaced from the magnetron, and an ion source also displaced from the magnetron and located so that the ion beam from the ion source is directed at the deposition substrate. The ion source is operated without an electron-emitting cathode-neutralizer, the electron current for this function being provided by electrons from the magnetron. In one specific embodiment, the ion source is operated so that the potential of the deposition substrate is maintained close to that of a common ground for the magnetron and the ion source. In another embodiment, the ion source is of the Hall-current type and the discharge current of the ion source is approximately equal in magnitude to the current of the magnetron discharge.

Abstract: In accordance with one specific embodiment of the present invention, the ion optics for use with an ion source have a plurality of electrically conductive grids that are mutually spaced apart and have mutually aligned respective pluralities of apertures through which ions may be accelerated and wherein each grid has an integral peripheral portion. A plurality of moment means are applied to a circumferentially distributed plurality of locations on the peripheral portion of each grid, which is initially flat, thereby establishing an annular segment of a cone as the approximate shape for that peripheral portion and a segment of a sphere as the approximate dished shape for the grid as a whole. The plurality of grids have conformal shapes in that the direction of deformation and the approximate spherical radii are the same.

Abstract: In accordance with one specific embodiment of the present invention, an ion-beam deposition apparatus uses a plurality of stationary sputter targets so located so as to provide a predetermined thickness distribution of the target material on a substrate. This distribution is obtained without mechanical motion of ion sources, sputter targets, or a shaper located between the sputter targets and deposition substrate.

Abstract: In accordance with one specific embodiment of the present invention, the closed drift hollow cathode comprises an axisymmetric discharge region into which an ionizable gas is introduced, an annular electron emitting cathode insert disposed laterally about that discharge region, a surrounding enclosure, an aperture in that enclosure disposed near the axis of symmetry and at one end of that region, and a magnetic field within that region which is both axisymmetric and generally disposed transverse to a path from the cathode insert to the aperture. An electrical discharge is established between the cathode insert and the enclosure. The electrons emitted from the cathode insert drift in closed paths around the axis, collide with molecules of ionizable gas, and sustain the discharge plasma by generating additional electron-ion pairs. Ions from the plasma bombard the cathode insert, thereby maintaining an emissive temperature.

Abstract: In one embodiment of this invention, the apparatus for sputter deposition within an evacuated volume comprises a compact gridless ion source into which an ionizable gas is introduced and from which ions leave with directed energies at or near the sputtering threshold and a sputter target near that source, biased negative relative to the surrounding vacuum enclosure, and located within the beam of ions leaving that source. Particles sputtered from the target are deposited on a deposition substrate spaced from both the ion source and the sputter target. An energetic beam of electrons can be generated by the incident ions striking the negatively biased sputter target and the deposition substrate is located either within or outside of this beam, depending on whether the net effect of bombardment by energetic electrons is beneficial or detrimental to that particular deposition process.

Abstract: In one embodiment of the present invention, the ion optics for use with an ion source have first and second electrically conductive grids having mutually aligned respective pluralities of apertures through which ions may be accelerated and wherein each has an integral peripheral portion. There is also a support member. There are first and second series of seats around the respective peripheral portions of the first and second grids. A plurality of first spherical insulators are distributed between seats of the first and second series, thereby establishing a predetermined distance between the grids while still enabling radial movement between their peripheral portions. There are third and fourth series of seats around the support member and the peripheral portion of the second grid, respectively, with seats of the fourth series displaced from those of the second series in the same grid.

Abstract: In accordance with one specific embodiment of the present invention, the ion assisted deposition source for thin films comprises an axially symmetric discharge region into which an ionizable gas is introduced, a sputter target at one end of that region, an axially symmetric magnetic field within and extending out the opposite and open end of that region, an anode around the circumference of that region, and an electron emitting cathode located near the open end of that region. Particles are sputtered from the sputter target, pass through the discharge region, and are deposited on a deposition substrate located exterior of both the discharge region and the deposition source. A beam of energetic ions from the discharge region bombards the film being deposited to improve the adhesion, density, and other properties of that film.

Abstract: Ion-beam probes of the planar, screened, and multilayer types are shown and described. These probes can detect the arrival of energetic ions and, in the latter type, also detect the arrival of energetic neutral molecules. A specific improvement is the use of a multilayer collection surface behind an aperture to measure the angular distribution of the etching contributions of energetic ions and/or energetic neutral molecules. After use, this multilayer collection surface provides a permanent record of the measurement. The improvement is also suitable for the adverse thermal and ion-etching environment of an energetic ion beam. In one embodiment, the aperture size and distance from the collection surface are such that a theoretical analysis of etch depth behind a straight-edge mask can be used to analyze the experimental results. The etch contour can be accurately reproduced from the measurement of half-maximum half angle, as long as the assumed distribution is incorporated in the measurement process.