Patents by Inventor James Robert Janesick

James Robert Janesick has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9287319
    Abstract: A CMOS multi-pinned pixel having very low dark current and very high charge transfer performance over that of conventional CMOS pixels is disclosed. The CMOS pixel includes epitaxial silicon and at least one transfer gate formed upon the epitaxial silicon. A pinned-photodiode is formed in the epitaxial silicon. A multi-pinned (MP) implant layer is implanted in the epitaxial silicon at least partially extending across the pinned-photodiode and substantially underlying the at least one transfer gate of the CMOS pixel to promote dark current passivation during an accumulation state and promote charge transfer during a transfer state.
    Type: Grant
    Filed: November 4, 2013
    Date of Patent: March 15, 2016
    Assignee: SRI International
    Inventor: James Robert Janesick
  • Patent number: 9200956
    Abstract: A readout transistor circuit for a pixel is disclosed. The readout transistor circuit includes a sense node. A reset transistor is in signal communication with the sense node. A source follower transistor is in signal communication with the sense node. A row select transistor is in signal communication with the source follower transistor. A switching transistor is in signal communication with the sense node. A capacitor is in signal communication with the switching transistor. The switching transistor is configured to place the capacitor in signal communication with the sense node to switch between a low voltage-per-charge (V/e?) ratio and a high voltage-per-charge (V/e?) to enable low noise performance of the sense node. The capacitor may be a metal-insulator-metal (MIM) capacitor. At least one of the reset transistor, the source follower transistor, the row select transistor, and the switching transistor may be a MOSFET. One or more of the MOSFETs may be a buried channel MOSFET.
    Type: Grant
    Filed: June 27, 2011
    Date of Patent: December 1, 2015
    Assignee: SRI INTERNATIONAL
    Inventor: James Robert Janesick
  • Patent number: 8835999
    Abstract: A CMOS pixel is disclosed. The CMOS pixel includes a semiconductor substrate; a sense node formed in the semiconductor substrate and positioned substantially in the center of the CMOS pixel; a transfer gate formed about the sense node; and at least one photodiode formed about the transfer gate. A reset transistor, a source follower transistor, and a row select transistor are located substantially to one side of the CMOS pixel substantially adjacent to the photodiode. The sense node is operable to be floating. An implant may be formed about the photodiode configured to step potential in a direction toward the sense node.
    Type: Grant
    Filed: July 27, 2010
    Date of Patent: September 16, 2014
    Assignee: SRI International
    Inventor: James Robert Janesick
  • Patent number: 8779481
    Abstract: A method of manufacturing a CMOS image sensor is disclosed. A silicon-on-insulator substrate is provided, which includes providing a silicon-on-insulator substrate including a mechanical substrate, an insulator layer substantially overlying the mechanical substrate, and a seed layer substantially overlying the insulator layer. A semiconductor substrate is epitaxially grown substantially overlying the seed layer. The mechanical substrate and at least a portion of the insulator layer are removed. An ultrathin oxide later is formed substantially underlying the semiconductor substrate. A mono layer of metal is formed substantially underlying the ultrathin oxide layer.
    Type: Grant
    Filed: January 24, 2013
    Date of Patent: July 15, 2014
    Assignee: SRI International
    Inventor: James Robert Janesick
  • Publication number: 20140138748
    Abstract: A CMOS multi-pinned pixel having very low dark current and very high charge transfer performance over that of conventional CMOS pixels is disclosed. The CMOS pixel includes epitaxial silicon and at least one transfer gate formed upon the epitaxial silicon. A pinned-photodiode is formed in the epitaxial silicon. A multi-pinned (MP) implant layer is implanted in the epitaxial silicon at least partially extending across the pinned-photodiode and substantially underlying the at least one transfer gate of the CMOS pixel to promote dark current passivation during an accumulation state and promote charge transfer during a transfer state.
    Type: Application
    Filed: November 4, 2013
    Publication date: May 22, 2014
    Applicant: SRI International
    Inventor: James Robert Janesick
  • Patent number: 8592245
    Abstract: A CMOS image sensor is disclosed. The CMOS imager includes a lightly doped semiconductor substrate of a first conductivity type. At least one CMOS pixel of a second conductivity type is formed in the semiconductor substrate. The semiconductor substrate is configured to receive a bias voltage applied for substantially depleting the semiconductor substrate and for forming a depletion edge within the semiconductor substrate. A well of the second conductivity type substantially surrounds the at least one CMOS pixel to form a depletion region about the at least one CMOS pixel operable to form a minimum predetermined barrier to the depletion edge within the semiconductor substrate to pinch off substrate bias in proximity to the return contact.
    Type: Grant
    Filed: October 17, 2012
    Date of Patent: November 26, 2013
    Assignee: SRI International
    Inventor: James Robert Janesick
  • Patent number: 8389319
    Abstract: A method of manufacturing a CMOS image sensor is disclosed. A silicon-on-insulator substrate is provided, which includes providing a silicon-on-insulator substrate including a mechanical substrate, an insulator layer substantially overlying the mechanical substrate, and a seed layer substantially overlying the insulator layer. A semiconductor substrate is epitaxially grown substantially overlying the seed layer. The mechanical substrate and at least a portion of the insulator layer are removed. An ultrathin oxide layer is formed substantially underlying the semiconductor substrate. A mono layer of metal is formed substantially underlying the ultrathin oxide layer.
    Type: Grant
    Filed: July 27, 2010
    Date of Patent: March 5, 2013
    Assignee: SRI International
    Inventor: James Robert Janesick
  • Patent number: 8319262
    Abstract: A CMOS image sensor is disclosed. The CMOS imager includes a lightly doped semiconductor substrate of a first conductivity type. At least one CMOS pixel of a second conductivity type is formed in the semiconductor substrate. The semiconductor substrate is configured to receive a bias voltage applied for substantially depleting the semiconductor substrate and for forming a depletion edge within the semiconductor substrate. A well of the second conductivity type substantially surrounds the at least one CMOS pixel to form a depletion region about the at least one CMOS pixel operable to form a minimum predetermined barrier to the depletion edge within the semiconductor substrate to pinch off substrate bias in proximity to the return contact.
    Type: Grant
    Filed: July 27, 2010
    Date of Patent: November 27, 2012
    Assignee: SRI International
    Inventor: James Robert Janesick
  • Publication number: 20120104464
    Abstract: A CMOS image sensor is disclosed. The CMOS image sensor includes a semiconductor substrate having a surface. An epitaxial layer is grown on the surface. A p-type CMOS pixel formed substantially in the epitaxial layer. In one version of the CMOS image sensor, there exists a net n-type dopant concentration profile in the semiconductor substrate and the epitaxial layer which has a maximum value at a predetermined distance from the surface and which decreases monotonically on both sides of the profile from the maximum value within the semiconductor substrate and the epitaxial layer. In another version of the CMOS image sensor, there exists a net n-type dopant concentration profile in the semiconductor substrate and the epitaxial layer which has a maximum value at the surface and which decreases monotonically with increasing distance from the surface within the semiconductor substrate and the epitaxial layer.
    Type: Application
    Filed: October 27, 2011
    Publication date: May 3, 2012
    Inventors: James Robert Janesick, Peter Alan Levine, John Robertson Tower
  • Publication number: 20110315854
    Abstract: A readout transistor circuit for a pixel is disclosed. The readout transistor circuit includes a sense node. A reset transistor is in signal communication with the sense node. A source follower transistor is in signal communication with the sense node. A row select transistor is in signal communication with the source follower transistor. A switching transistor is in signal communication with the sense node. A capacitor is in signal communication with the switching transistor. The switching transistor is configured to place the capacitor in signal communication with the sense node to switch between a low voltage-per-charge (V/e?) ratio and a high voltage-per-charge (V/e?) to enable low noise performance of the sense node. The capacitor may be a metal-insulator-metal (MIM) capacitor. At least one of the reset transistor, the source follower transistor, the row select transistor, and the switching transistor may be a MOSFET. One or more of the MOSFETs may be a buried channel MOSFET.
    Type: Application
    Filed: June 27, 2011
    Publication date: December 29, 2011
    Inventor: James Robert Janesick
  • Publication number: 20110024810
    Abstract: A method of manufacturing a CMOS image sensor is disclosed. A silicon-on-insulator substrate is provided, which includes providing a silicon-on-insulator substrate including a mechanical substrate, an insulator layer substantially overlying the mechanical substrate, and a seed layer substantially overlying the insulator layer. A semiconductor substrate is epitaxially grown substantially overlying the seed layer. The mechanical substrate and at least a portion of the insulator layer are removed. An ultrathin oxide layer is formed substantially underlying the semiconductor substrate. A mono layer of metal is formed substantially underlying the ultrathin oxide layer.
    Type: Application
    Filed: July 27, 2010
    Publication date: February 3, 2011
    Inventor: James Robert Janesick
  • Publication number: 20110024809
    Abstract: A CMOS pixel is disclosed. The CMOS pixel includes a semiconductor substrate; a sense node formed in the semiconductor substrate and positioned substantially in the center of the CMOS pixel; a transfer gate formed about the sense node; and at least one photodiode formed about the transfer gate. A reset transistor, a source follower transistor, and a row select transistor are located substantially to one side of the CMOS pixel substantially adjacent to the photodiode. The sense node is operable to be floating. An implant may be formed about the photodiode configured to step potential in a direction toward the sense node.
    Type: Application
    Filed: July 27, 2010
    Publication date: February 3, 2011
    Inventor: James Robert Janesick
  • Publication number: 20110024808
    Abstract: A CMOS image sensor is disclosed. The CMOS imager includes a lightly doped semiconductor substrate of a first conductivity type. At least one CMOS pixel of a second conductivity type is formed in the semiconductor substrate. The semiconductor substrate is configured to receive a bias voltage applied for substantially depleting the semiconductor substrate and for forming a depletion edge within the semiconductor substrate. A well of the second conductivity type substantially surrounds the at least one CMOS pixel to form a depletion region about the at least one CMOS pixel operable to form a minimum predetermined barrier to the depletion edge within the semiconductor substrate to pinch off substrate bias in proximity to the return contact.
    Type: Application
    Filed: July 27, 2010
    Publication date: February 3, 2011
    Inventor: James Robert Janesick
  • Patent number: 7250325
    Abstract: An imager, an image sensor included in the imager and a method of fabricating the image sensor are provided. The image sensor having a substrate with front and back sides to produce image data, includes a transparent conductive coating arranged on the back side of the substrate, a first well region of a first conductive type having first and second opposite sides, the first side being arranged adjacent with the front side of the image sensor; and a second well region of a second conductive type, different from the first conductive type and having a deep well region provided adjacent with the second side of the first well region, the transparent conductive coating configured to develop or to receive a first potential and the first well region configured to receive a second potential to substantially deplete a region between the transparent conductive coating and the first well region.
    Type: Grant
    Filed: June 14, 2005
    Date of Patent: July 31, 2007
    Assignee: Sarnoff Corporation
    Inventors: James Robert Janesick, Eugene L. Dines, Mark S. Muzilla, Maryn G. Stapelbroek
  • Patent number: 7166878
    Abstract: An imager, an image sensor included in the imager and a method of fabricating the image sensor are provided. The image sensor having a substrate with front and back sides to produce image data, includes a transparent conductive coating arranged on the back side of the substrate, a first well region of a first conductive type having first and second opposite sides, the first side being arranged adjacent with the front side of the image sensor; and a second well region of a second conductive type, different from the first conductive type and having a deep well region provided adjacent with the second side of the first well region, the transparent conductive coating configured to develop or to receive a first potential and the first well region configured to receive a second potential to substantially deplete a region between the transparent conductive coating and the first well region.
    Type: Grant
    Filed: October 28, 2004
    Date of Patent: January 23, 2007
    Assignee: Sarnoff Corporation
    Inventors: James Robert Janesick, Eugene L. Dines, Mark S. Muzilla, Maryn G. Stapelbroek