Abstract: A circuit includes a resistive memory cell in a memory array to store a memory state for the resistive memory cell. A reference cell in the memory array stores a reference memory state for the resistive memory cell. A function generator concurrently applies a read voltage to the resistive memory cell and the reference cell via a memory row address. A sensing circuit enables the function generator and monitors a target current received from the resistive memory cell when selected via a memory column address and monitors a reference current received when selected via a reference column address in response to the read voltage applied to the memory row address. A current comparator circuit in the sensing circuit compares a difference between the target current and the reference current to determine the memory state of the resistive memory cell.

Abstract: In an embodiment, a processor comprises: a plurality of cores each to execute instructions; a plurality of thermal sensors, at least one of which is associated with each of the cores; and a power control unit (PCU) coupled to the cores. The PCU includes a thermal control logic to preemptively throttle a first core by a first throttle amount when a temperature of a second core exceeds at least one thermal threshold. Note that this first core may be preemptively throttled independently of a throttling of the second core and may have a temperature of the first core does not exceed any thermal threshold. Other embodiments are described and claimed.

Abstract: A circuit includes a resistive memory cell in a memory array to store a memory state for the resistive memory cell. A reference cell in the memory array stores a reference memory state for the resistive memory cell. A function generator concurrently applies a read voltage to the resistive memory cell and the reference cell via a memory row address. A sensing circuit enables the function generator and monitors a target current received from the resistive memory cell when selected via a memory column address and monitors a reference current received when selected via a reference column address in response to the read voltage applied to the memory row address. A current comparator circuit in the sensing circuit compares a difference between the target current and the reference current to determine the memory state of the resistive memory cell.

Abstract: This disclosure provides a circuit that includes a ramp generator to apply a voltage ramp to a resistive memory cell. A sensing circuit can enable the ramp generator and monitor a current output received from the resistive memory cell in response to the applied voltage ramp, wherein the sensing circuit compares the current output to a predetermined current threshold to determine the state of the resistive memory cell.

Abstract: A memory controller includes a voltage driver and a voltage comparator. The voltage driver applies a variable voltage to a selected line of a crossbar array to determine a first measured voltage that drives a first read current through a selected memory cell of the crossbar array. The voltage driver applies the variable voltage to the selected line to determine a second measured voltage that drives a second read current through the selected memory cell. The voltage comparator then determines a voltage difference between the first measured voltage and the second measured voltage and to compare the voltage difference with a reference voltage difference to determine a state of the selected memory cell. The crossbar array comprises a plurality of row lines, a plurality of column lines, and a plurality of memory cells. Each memory cell is coupled between a unique combination of one row line and one column line.

Abstract: A memory controller includes a voltage driver and a voltage comparator. The voltage driver applies a variable voltage to a selected line of a crossbar array to determine a first measured voltage that drives a first read current through a selected memory cell of the crossbar array. The voltage driver applies the variable voltage to the selected line to determine a second measured voltage that drives a second read current through the selected memory cell. The voltage comparator then determines a voltage difference between the first measured voltage and the second measured voltage and to compare the voltage difference with a reference voltage difference to determine a state of the selected memory cell. The crossbar array comprises a plurality of row lines, a plurality of column lines, and a plurality of memory cells. Each memory cell is coupled between a unique combination of one row line and one column line.

Abstract: This disclosure provides a circuit that includes a ramp generator to apply a voltage ramp to a resistive memory cell. A sensing circuit can enable the ramp generator and monitor a current output received from the resistive memory cell in response to the applied voltage ramp, wherein the sensing circuit compares the current output to a predetermined current threshold to determine the state of the resistive memory cell.

Abstract: In an embodiment, a processor comprises: a plurality of cores each to execute instructions; a plurality of thermal sensors, at least one of which is associated with each of the cores; and a power control unit (PCU) coupled to the cores. The PCU includes a thermal control logic to preemptively throttle a first core by a first throttle amount when a temperature of a second core exceeds at least one thermal threshold. Note that this first core may be preemptively throttled independently of a throttling of the second core and may have a temperature of the first core does not exceed any thermal threshold. Other embodiments are described and claimed.

Abstract: In an embodiment, a processor comprises: a plurality of cores each to execute instructions; a plurality of thermal sensors, at least one of which is associated with each of the cores; and a power control unit (PCU) coupled to the cores. The PCU includes a thermal control logic to preemptively throttle a first core by a first throttle amount when a temperature of a second core exceeds at least one thermal threshold. Note that this first core may be preemptively throttled independently of a throttling of the second core and may have a temperature of the first core does not exceed any thermal threshold. Other embodiments are described and claimed.

Abstract: In an embodiment, a processor comprises: a plurality of cores each to execute instructions; a plurality of thermal sensors, at least one of which is associated with each of the cores; and a power control unit (PCU) coupled to the cores. The PCU includes a thermal control logic to preemptively throttle a first core by a first throttle amount when a temperature of a second core exceeds at least one thermal threshold. Note that this first core may be preemptively throttled independently of a throttling of the second core and may have a temperature of the first core does not exceed any thermal threshold. Other embodiments are described and claimed.

Abstract: Methods and systems to detect droop events on-chip, which may include a sensor circuit located adjacent to a voltage node to convert a corresponding voltage to a digital count or value indicative of the voltage. The sensor circuit may include an n-stage ring oscillator and an asynchronous counter. The sensor circuit may include circuitry to capture and convert a phase associated with a count to a binary fractional value to increase voltage resolution. Multiple counts associated with the node may be evaluated at the node to identify minimum and maximum counts and corresponding time stamps. More complex evaluation and control circuitry may be shared amongst a plurality of sensor circuits and may include circuitry to generate and compare counts to one or more variable thresholds, circuitry to average counts over time, and memory to store state values associated with the sensors.

Abstract: Methods and systems to detect droop events on-chip, which may include a sensor circuit located adjacent to a voltage node to convert a corresponding voltage to a digital count or value indicative of the voltage. The sensor circuit may include an n-stage ring oscillator and an asynchronous counter. The sensor circuit may include circuitry to capture and convert a phase associated with a count to a binary fractional value to increase voltage resolution. Multiple counts associated with the node may be evaluated at the node to identify minimum and maximum counts and corresponding time stamps. More complex evaluation and control circuitry may be shared amongst a plurality of sensor circuits and may include circuitry to generate and compare counts to one or more variable thresholds, circuitry to average counts over time, and memory to store state values associated with the sensors.

Abstract: Disclosed herein are different embodiments for estimating and/or controlling power consumption in a chip based on hot and cool temperatures in the chip.

Abstract: A method for calibrating a voltage controlled oscillator (VCO) comprising applying a plurality of known voltages to the input of a VCO, monitoring, for each of the voltages, an output count from the VCO over a set interval, and storing the output counts for each voltage. Also disclosed is a system for calibrating a voltage controlled oscillator (VCO) comprising a plurality of known voltages, wherein the known voltage are connectable to the VCO, and a controller coupled to the output of the VCO, wherein the controller maintains a calibration table of VCO output counts for selected voltage inputs.

Abstract: An analog, fully integrated, partial response maximum likelihood (PRML) read channel utilizing a high-performance analog delay line, an analog adaptive equalizer and an analog Viterbi detector is provided, resulting in saved space, performance gains, and lower power consumption. For signal detection and reconstruction used in read operations, the partial response maximum likelihood (PRML) read channel includes a variable gain amplifier coupled to a lowpass filter for input to an adaptive analog equalizer. The adaptive analog equalizer comprises an analog delay line and an analog feedforward equalizer (FFE). An analog Viterbi detector employs maximum-likelihood sequence estimation (MLSE) techniques to performs the signal detection function. A decoder/descrambler produces a final reconstructed signal. The analog implementation of a partial response maximum likelihood (PRML) read channel also includes a scrambler/encoder coupled to a write precompensation circuit for output to a separate write head.

Abstract: A video DAC for driving video displays with reduced power dissipation is presented. This is accomplished using a dual driver circuit connected to a current mirror, the dual driver comprising a strong driver and a weak driver. The dual driver permits switching current between the video load and a dummy load. The current to the dummy load is disabled during periods when the video signal remains steady for a predetermined period of time. The dual driver, using the weak driver, disables the current to the dummy load during video blanking and synchronization periods. This scheme substantially reduces the power dissipation in the DAC.

Abstract: An optical transmitter/receiver pair has an integrated CMOS circuit that provides a current flow to a pre-biased solid state light emitting device (LED) in response to the presence or absence of a digital input signal. The current flow is augmented at the rising and falling edges of the input signal to enhance turn-on and turn-off speed of the LED. The LED is optically coupled to a photodiode that produces a current flow in response to illumination. The photodiode is shielded from spurious electronic noise by a transparent shield and the output of the photodiode is amplified to produce an output voltage, which is connected to a capacitively delayed voltage divider. The voltage divider generates a time delayed threshold voltage connectable along with the output voltage to the inputs of a comparator.