Abstract: A thruster system for use in a spacecraft includes a microwave source, a resonant cavity coupled to the microwave source, wherein the microwave source is configured to generate a standing wave field in the resonant cavity, a nozzle provided at one end of the resonant cavity; and at least one injector configured to inject propellant into the resonant cavity so as to create a rotating circumferential flow. The standing wave field raises a temperature of the injected propellant to provide thrust by way of a hot gas exiting the resonant cavity via the nozzle.

Abstract: To manage propellant in a spacecraft, the method of this disclosure includes storing propellant in a tank as a mixture of liquid and gas; transferring the propellant out of the tank; converting the mixture of liquid and gas propellant into a single phase, where the single phase is either liquid or gaseous; and supplying the single phase of the propellant to a thruster.

Abstract: Disclosed are techniques related to reflectors having overall mesa shapes. Such a reflector may be formed over an overall mesa-shaped, layered structure of an apparatus for emitting light. The overall mesa-shaped, layered structure may comprise a mesa complement structure, a first-type doped semiconductor, a light emission layer, and a second-type doped semiconductor arranged in layers. Thus, the reflector may be configured to collimate light that emits from the light emission layer and reaches the reflector through the mesa complement structure.

Abstract: Systems and methods are disclosed for mining lunar and Martian polar permafrost to extract gas propellants. The method can comprise identifying a plurality of near-polar landing sites in craters in which the surface comprises permafrost in perpetual darkness, wherein such landing sites have perpetual sunlight available at altitudes of about 100 to 200 m. A mining outpost can be established in at least one of the sites and a high altitude solar array deployed at the landing site using a lightweight mast tall enough to generate near continuous power for the outpost. Systems and apparatus are disclosed for mining the permafrost at the landing sites using radiant gas dynamic mining procedures. The systems can comprise a rover vehicle with an integrated large area dome for cryotrapping gases released from the surface and multi-wavelength radiant heating systems to provide adjustable heating as a function of depth.

Abstract: There is herein described light emitting medical devices and a method of manufacturing said medical devices. More particularly, there is described integrated light emitting medical devices (e.g. neural devices) capable of being used in optogenetics and a method of manufacturing said medical devices.

Abstract: Ion implantation is carried out into a GaN layer of mLEDs to partially or fully convert one or more regions of the crystalline GaN layer to amorphous GaN. As a result, the GaN layer through which light rays propagate have non-uniform refractive indexes that modify propagation paths of some light rays. Ions can be implanted in a region around an active region that emits light to function as an optical waveguide. The ion implanted regions direct light rays that propagate along predetermined directions into predetermined propagation paths thereby to modify the angle of incidence of these light rays. As such, the light extraction efficiency of the mLEDs is increased.

Abstract: There is herein described a process for providing improved device performance and fabrication techniques for semiconductors. More particularly, the present invention relates to a process for forming features, such as pixels, on GaN semiconductors using a p-GaN modification and annealing process. The process also relates to a plasma and thermal anneal process which results in a p-GaN modified layer where the annealing simultaneously enables the formation of conductive p-GaN and modified p-GaN regions that behave in an n-like manner and block vertical current flow. The process also extends to Resonant-Cavity Light Emitting Diodes (RCLEDs), pixels with a variety of sizes and electrically insulating planar layer for electrical tracks and bond pads.

Abstract: A light assembly can have an array of light sources forming rows and columns, where the array comprises a plurality of chips, and each chip comprises a subarray of light sources forming the rows and columns. A boundary between chips in the array can be configured to extend diagonally across rows and columns of the array such that, for each column across which the boundary extends, the first row of the plurality rows may not have a light source disposed in the respective column, but a second row of the plurality of rows has a light source disposed in the respective column.

Abstract: Techniques related to laser lift-off masks are disclosed. In some embodiments, masking material is applied to a substrate that is attached to a plurality of semiconductor device sets. More specifically, the masking material is applied to one or more regions of the substrate between the semiconductor device sets. When the semiconductor device sets are embedded in a filling material, the masking material may be situated between the substrate and the filling material. Thus, transmitting light through the substrate toward the semiconductor device sets causes the substrate to become detached from the semiconductor device sets. However, the light is at least partially occluded by the masking material.

Abstract: A lithography system includes an electron source, a lens, and a stencil mask. The electron source emits a beam of electrons. The lens converts the emitted beam of electrons into a diffuse beam of parallel electrons. The stencil mask is positioned between the lens and a semiconductor wafer with an electron-sensitive resists. The stencil mask has a pattern to selectively pass portions of the diffuse beam of parallel electrons onto the electron-sensitive resist of the wafer.

Abstract: Example implementations relate data communication cables. As an example, a data communication cable includes a first electrical connector implementing a first data communication protocol. The first electrical connector includes a set of power pins and a set of data pins. The data communication cable also includes a header connector physically coupled to the set of data pins to route data from a header of a computing device to the set of data pins via the first communication protocol. The data communication cable further includes a second electrical connector implementing a second data communication protocol. The second electrical connector is physically coupled to the set of power pins to provide power from a data communication port of the computing device to the set of power pins via the second data communication protocol.

Abstract: Display devices with improved display contrast and methods of manufacturing the display devices. Some embodiments include a method of manufacturing a light emitting diode (LED) array. The method includes forming a first mesa area of a first LED and a second mesa area of a second LED, where a trench is defined between the first and second mesa areas. At least a portion of the trench is filled with a non-transparent or substantially non-transparent polymeric material that absorbs light emitted from the first and second LEDs.

Abstract: There is herein described light generating electronic components with improved light extraction and a method of manufacturing said electronic components. More particularly, there is described LEDs having improved light extraction and a method of manufacturing said LEDs.

Abstract: There is herein described a process for providing improved device performance and fabrication techniques for semiconductors. More particularly, the present invention relates to a process for forming features, such as pixels, on GaN semiconductors using a p-GaN modification and annealing process. The process also relates to a plasma and thermal anneal process which results in a p-GaN modified layer where the annealing simultaneously enables the formation of conductive p-GaN and modified p-GaN regions that behave in an n-like manner and block vertical current flow. The process also extends to Resonant-Cavity Light Emitting Diodes (RCLEDs), pixels with a variety of sizes and electrically insulating planar layer for electrical tracks and bond pads.

Abstract: There is herein described a process for providing improved device performance and fabrication techniques for semiconductors. More particularly, the present invention relates to a process for forming features, such as pixels, on GaN semiconductors using a p-GaN modification and annealing process. The process also relates to a plasma and thermal anneal process which results in a p-GaN modified layer where the annealing simultaneously enables the formation of conductive p-GaN and modified p-GaN regions that behave in an n-like manner and block vertical current flow. The process also extends to Resonant-Cavity Light Emitting Diodes (RCLEDs), pixels with a variety of sizes and electrically insulating planar layer for electrical tracks and bond pads.

Abstract: An apparatus includes a circuit card substrate that is associated with a network interface card. The circuit card substrate includes a connector edge to be received in a connector that is nominally associated with a slot to receive an expansion card that, when installed in a computing device, is physically enclosed within the computing device. The apparatus includes a port connector that is mounted to the circuit card substrate. The port connector is to be accessible from a region outside of the computing device when the connector edge of the circuit card substrate is received in the connector.

Abstract: Example implementations relate data communication cables. As an example, a data communication cable includes a first electrical connector implementing a first data communication protocol. The first electrical connector includes a set of power pins and a set of data pins. The data communication cable also includes a header connector physically coupled to the set of data pins to route data from a header of a computing device to the set of data pins via the first communication protocol. The data communication cable further includes a second electrical connector implementing a second data communication protocol. The second electrical connector is physically coupled to the set of power pins to provide power from a data communication port of the computing device to the set of power pins via the second data communication protocol.

Abstract: An example adjustable expansion slot includes a panel with an opening to receive an expansion slot bracket where the panel includes a guiding portion to guide a first end of the expansion slot bracket into an inserted position. The adjustable expansion slot apparatus to further include an adjustable fastener to fasten a second end of the expansion slot bracket into the inserted position. In some examples, the position of the adjustable fastener can be adjusted to accommodate size variations of the expansion slot bracket.

Abstract: An example adjustable expansion slot includes a panel with an opening to receive an expansion slot bracket where the panel includes a guiding portion to guide a first end of the expansion slot bracket into an inserted position. The adjustable expansion slot apparatus to further include an adjustable fastener to fasten a second end of the expansion slot bracket into the inserted position. In some examples, the position of the adjustable fastener can be adjusted to accommodate size variations of the expansion slot bracket.

Abstract: There is herein described light generating electronic components with improved light extraction and a method of manufacturing said electronic components. More particularly, there is described LEDs having improved light extraction and a method of manufacturing said LEDs.