Abstract: An electronic device includes a semiconductor substrate and a dielectric layer over the substrate. A resistive link located over the substrate includes a first resistive region and a second resistive region. The first resistive region has a first resistivity and a first morphology. The second resistive region has a second resistivity and a different second morphology.

Abstract: An electronic device includes a semiconductor substrate and a dielectric layer over the substrate. A resistive link located over the substrate includes a first resistive region and a second resistive region. The first resistive region has a first resistivity and a first morphology. The second resistive region has a second resistivity and a different second morphology.

Abstract: A method provides forming a photovoltaic (PV) cell. The PV cell may be, e.g. a heterojunction with intrinsic thin layer (HIT) cell. The method includes forming a crystalline semiconductor layer over a substrate. The crystalline semiconductor layer is heated above a melting temperature of the semiconductor. A portion of the crystalline semiconductor layer is thereby converted to a quenched amorphous semiconductor layer.

Abstract: An electronic device includes a semiconductor substrate and a dielectric layer over the substrate. A resistive link located over the substrate includes a first resistive region and a second resistive region. The first resistive region has a first resistivity and a first morphology. The second resistive region has a second resistivity and a different second morphology.

Abstract: The present invention provides an apparatus and method for detecting if a person has attempted to tamper with an integrated circuit (IC). The apparatus is located on the IC and comprises detection circuitry that detects a build up of electrical charge on the IC and disablement circuitry that disables the IC when the detection circuitry detects a build up of electrical charge on the IC. The method comprises detecting if a build up of electrical charge on the IC has occurred and disabling the IC when a build up of electrical charge on the IC has been detected.

Abstract: Oxides of tantalum and niobium are selectively etched using patterned silicon oxide deposited by a low-temperature chemical vapor deposition as a mask and a sulfate flux to selectively remove exposed portions of the tantalum or niobium oxide substrate.

Abstract: A proton-exchange method of forming optical waveguides within a lithium-based optical substrate is disclosed which utilizes sulfuric acid as the proton source. The substrate is masked to expose the areas desired to be transformed into waveguiding regions and immersed in a heated sulfuric acid bath for a period of time sufficient to provide the exchange between the protons in the acid and the lithium in the substrate. The presence of the protons in the substrate results in increasing the extraordinary refractive index .DELTA.n.sub.e in the unmasked area so that optical guiding may be accomplished. Upon removal of the substrate from the sulfuric acid bath, the substrate must be annealed so as to drive the protons to a depth sufficient to provide effective guiding.