Abstract: A method includes forming a conductive material on a first dielectric layer, exposing the conductive material to aniline to produce a passivated surface of the conductive material, and after exposing the conductive material to aniline, forming a second dielectric layer on the first dielectric layer using a deposition process. The deposition process is a water-free and plasma-free deposition process, and the second dielectric layer does not form on the passivated surface of the conductive material.

Abstract: An apparatus for use with a first RJ-type female receptacle having an open, plug receiving end and an internal cavity, the first RJ-type female receptacle designed to receive a corresponding first modular mating RJ-type male plug, the apparatus having: a housing having a front face, a top wall, a bottom wall and side walls defining an opening formed within the front face; and the apparatus received in the first RJ-type female receptacle, and the opening dimensioned to receive a second modular mating RJ-type male plug, wherein the second modular mating RJ-type male plug is dimensioned smaller than the first modular mating RJ-type male plug.

Abstract: An apparatus for use with a first RJ-type female receptacle having an open, plug receiving end and an internal cavity, the first RJ-type female receptacle designed to receive a corresponding first modular mating RJ-type male plug, the apparatus having: a housing having a front face, a top wall, a bottom wall and side walls defining an opening formed within the front face; and the apparatus received in the first RJ-type female receptacle, and the opening dimensioned to receive a second modular mating RJ-type male plug, wherein the second modular mating RJ-type male plug is dimensioned smaller than the first modular mating RJ-type male plug.