Patents by Inventor James W. Cook
James W. Cook has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10211294Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.Type: GrantFiled: September 8, 2015Date of Patent: February 19, 2019Assignee: MACOM Technology Solutions Holdings, Inc.Inventors: John Claassen Roberts, James W. Cook, Jr.
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Publication number: 20190013196Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.Type: ApplicationFiled: July 10, 2017Publication date: January 10, 2019Applicant: M/A-COM Technology Solutions Holdings, Inc.Inventors: John Claassen Roberts, James W. Cook, JR.
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Patent number: 9704705Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.Type: GrantFiled: September 8, 2015Date of Patent: July 11, 2017Assignee: MACOM Technology Solutions Holdings, Inc.Inventors: John Claassen Roberts, James W. Cook, Jr.
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Patent number: 9627473Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.Type: GrantFiled: September 8, 2015Date of Patent: April 18, 2017Assignee: MACOM Technology Solutions Holdings, Inc.Inventors: John Claassen Roberts, Kevin J. Linthicum, Allen W. Hanson, James W. Cook, Jr.
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Publication number: 20170069713Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.Type: ApplicationFiled: September 8, 2015Publication date: March 9, 2017Applicant: M/A-COM Technology Solutions Holdings, Inc.Inventors: John Claassen Roberts, Kevin J. Linthicum, Allen W. Hanson, James W. Cook, JR.
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Publication number: 20170069720Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.Type: ApplicationFiled: September 8, 2015Publication date: March 9, 2017Applicant: M/A-COM Technology Solutions Holdings, Inc.Inventors: John Claassen Roberts, James W. Cook, JR.
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Publication number: 20170069484Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.Type: ApplicationFiled: September 8, 2015Publication date: March 9, 2017Applicant: M/A-COM Technology Solutions Holdings, Inc.Inventors: John Claassen Roberts, James W. Cook, JR.
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Publication number: 20170069742Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.Type: ApplicationFiled: September 8, 2015Publication date: March 9, 2017Applicant: M/A-COM Technology Solutions Holdings, Inc.Inventors: John Claassen Roberts, James W. Cook, JR.
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Publication number: 20170069744Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.Type: ApplicationFiled: September 8, 2015Publication date: March 9, 2017Applicant: M/A-COM Technology Solutions Holdings, Inc.Inventors: John Claassen Roberts, James W. Cook, JR.
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Patent number: 7994540Abstract: Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.Type: GrantFiled: July 24, 2009Date of Patent: August 9, 2011Assignee: International Rectifier CorporationInventors: Walter H. Nagy, Ricardo M. Borges, Jeffrey D. Brown, Apurva D. Chaudhari, James W. Cook, Jr., Allen W. Hanson, Jerry W. Johnson, Kevin J. Linthicum, Edwin L. Piner, Pradeep Rajagopal, John C. Roberts, Sameer Singhal, Robert J. Therrien, Andrei Vescan
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Publication number: 20100019850Abstract: Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.Type: ApplicationFiled: July 24, 2009Publication date: January 28, 2010Applicant: Nitronex CorporationInventors: Walter H. Nagy, Ricardo M. Borges, Jeffrey D. Brown, Apurva D. Chaudhari, James W. Cook, JR., Allen W. Hanson, Jerry W. Johnson, Kevin J. Linthicum, Edwin L. Piner, Pradeep Rajagopal, John C. Roberts, Sameer Singhal, Robert J. Therrien, Andrei Vescan
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Patent number: 7569871Abstract: Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.Type: GrantFiled: March 31, 2008Date of Patent: August 4, 2009Assignee: Nitronex CorporationInventors: Walter H. Nagy, Jerry Wayne Johnson, Edwin Lanier Piner, Pradeep Rajagopal, John Claassen Roberts, Sameer Singhal, Robert Joseph Therrien, Andrei Vescan, Ricardo M. Borges, Jeffrey D. Brown, Apurva D. Chaudhari, James W. Cook, Allen W. Hanson, Kevin J. Linthicum
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Publication number: 20080246058Abstract: Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.Type: ApplicationFiled: March 31, 2008Publication date: October 9, 2008Applicant: Nitronex CorporationInventors: Walter H. Nagy, Ricardo M. Borges, Jeffrey D. Brown, Apurva D. Chaudhari, James W. Cook, Allen W. Hanson, Jerry W. Johnson, Kevin J. Linthicum, Edwin L. Piner, Pradeep Rajagopal, John C. Roberts, Sameer Singhal, Robert J. Therrien, Andrei Vescan
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Patent number: 7352016Abstract: Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.Type: GrantFiled: November 13, 2006Date of Patent: April 1, 2008Assignee: Nitronex CorporationInventors: Walter H. Nagy, Ricardo M. Borges, Jeffrey D. Brown, Apurva D. Chaudhari, James W. Cook, Allen W. Hanson, Jerry Wayne Johnson, Kevin J. Linthicum, Edwin Lanier Piner, Pradeep Rajagopal, John Claassen Roberts, Sameer Singhal, Robert Joseph Therrien, Andrei Vescan
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Patent number: 7135720Abstract: Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.Type: GrantFiled: August 5, 2004Date of Patent: November 14, 2006Assignee: Nitronex CorporationInventors: Walter H. Nagy, Ricardo M. Borges, Jeffrey D. Brown, Apurva D. Chaudhari, James W. Cook, Jr., Allen W. Hanson, Jerry W. Johnson, Kevin J. Linthicum, Edwin L. Piner, Pradeep Rajagopal, John C. Roberts, Sameer Singhal, Robert J. Therrien, Andrei Vescan
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Patent number: 5911981Abstract: Surfactant blends that generate a stable spherical foam are disclosed. The surfactant blends contain a nonionic surfactant or an amphoteric surfactant as the principal foaming agent, and a sufficient amount of an acylate lactylate to enhance foam volume and provide a foam that remains in a spherical form for up to about forty minutes. A method of generating a long-lasting foam also is disclosed.Type: GrantFiled: October 24, 1997Date of Patent: June 15, 1999Assignee: R.I.T.A. CorporationInventors: Gerd H. Dahms, James W. Cook
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Patent number: 5744062Abstract: Balanced emulsifier blends that provide a stable oil-in-water emulsion of preselected viscosity are disclosed. The emulsifier blend contains an acyl lactylate as the primary emulsifier and a nonionic surfactant as the coemulsifier. A method of preparing an oil-in-water emulsion having a preselected viscosity also is disclosed.Type: GrantFiled: August 29, 1996Date of Patent: April 28, 1998Assignee: R.I.T.A. CorporationInventors: Gerd H. Dahms, James W. Cook
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Patent number: 5097246Abstract: A subminiature fuse includes a ceramic substrate with a glass coating disposed over a portion thereof. A fusing link is disposed on the glass coating, and weld pads for receiving fuse leads are disposed on opposite sides of the glass coating. The substrate, with leads attached, is encapsulated in plastic.Type: GrantFiled: April 16, 1990Date of Patent: March 17, 1992Assignee: Cooper Industries, Inc.Inventors: James W. Cook, Terence J. Evans
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Patent number: 4598186Abstract: Arc suppressor plates in a high amperage molded case circuit breaker are arranged in an arc corresponding to blade travel and define passageways having larger exits aligned with respective vents defined by a molded insulator engaged in the wall of the circuit breaker base.Type: GrantFiled: May 9, 1983Date of Patent: July 1, 1986Assignee: Square D CompanyInventors: James W. Cook, Tery J. Evans
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Patent number: 4490593Abstract: Arc control in a high amperage molded case circuit breaker is provided by a steel horn for each of a plurality of contact blades for each phase. The horn has a portion extending into a U-shaped recess in a steel arc runner plate. As the contacts separate, the portion travels close to one wall of the recess and then close to the other wall to transfer the arc from the contacts first to the one wall and then to the other wall which is located adjacent the arc suppressor assembly. A respective adjustment member extending through each horn controls the spacing between the blades and a contact carrier to in turn control the opening sequence of the contacts for minimizing arcing across certain contacts. Arc suppressor plates of alternating length are arranged in an arc corresponding to blade travel and define passageways having their larger exits aligned with respective vents defined by a molded insulator engaged in the wall of the base.Type: GrantFiled: May 9, 1983Date of Patent: December 25, 1984Assignee: Square D CompanyInventor: James W. Cook