Abstract: A safety coupler for an air hose terminating in a plug. The plug has a passageway between its first and second ends for the passage of air there through. The coupler member has upstream and downstream ends and first body coupler passageway sized for receiving a first cylindrical section of the plug and terminating in a washer. A sleeve coupler and spring for biasing the sleeve coupler towards the coupler member upstream end, the sleeve coupler terminating at its coupler member upstream end by a bushing plug being sized to create a shoulder for abutting a raised stop of the plug.

Abstract: CMOS devices are enhanced by forming a recess in the positive channel for depositing SiGe. Embodiments include providing a positive channel region and a negative channel region in a silicon substrate for a CMOS device, with an STI region therebetween; removing a native oxide from above the positive channel region to expose a silicon substrate; forming a recess in the silicon substrate in the positive channel region adjacent the STI region; and depositing SiGe in the recess in the positive channel region, where an upper surface of the SiGe is substantially level with an upper surface of the negative channel region.

Abstract: A metal-oxide-semiconductor (MOS) transistor having a gate electrode comprising a metal oxynitride and a method of forming the same are provided. The metal oxynitride preferably comprises molybdenum oxynitride and/or iridium oxynitride. The gate electrode may further comprise carbon and/or silicon. The gate electrode is preferably formed in a chamber containing nitrogen, oxygen and a carbon-containing gas. The gate electrode of the MOS transistor has a high work function and a low equivalent oxide thickness.