Abstract: The present invention relates to a method for semiconductor manufacturing of one semiconductor circuit, having a multiple of transistors NMOS1, NMOS2, NPN1, NPN2 of one type. The method comprises the steps of arranging a first region 4, 16 on a semiconductor substrate 1, and implementing two transistors of said type, having different sets of characteristics, in said first region 4, 16. The step of implementing said active devices comprises a step of creating a first 6′, 10′ and a second 6″, 10″ subregion within said first region 4, 16, and said step further comprising a step of introducing dopants having different sets of dose parameters, into a first and a second area, respectively, of said first region, said dopants being of a similar type, and a step of annealing said substrate 1 to create said first 6′, 10′ and second 6″, 10″ subregion, respectively, whereby two subregions, having different doping profiles, can be manufactured on a single integrated circuit.

Abstract: The present invention relates to a method for semiconductor manufacturing of one semiconductor circuit, having a multiple of transistors NMOS1, NMOS2, NPN1, NPN2 of one type. The method comprises the steps of arranging a first region 4, 16 on a semiconductor substrate 1, and implementing two transistors of said type, having different sets of characteristics, in said first region 4, 16. The step of implementing said active devices comprises a step of creating a first 6′, 10′ and a second 6″, 10″ subregion within said first region 4, 16, and said step further comprising a step of introducing dopants having different sets of dose parameters, into a first and a second area, respectively, of said first region, said dopants being of a similar type, and a step of annealing said substrate 1 to create said first 6′, 10′ and second 6″, 10″ subregion, respectively, whereby two subregions, having different doping profiles, can be manufactured on a single integrated circuit.

Abstract: A method and system for reducing spurious signal content in transmitters is described. A lowpass or bandpass filter can be inserted after an input signal node of a transmitter to remove interfering signals generated, for example, from another input signal node of the transmitter. In this way integration of the transmitter circuitry is enhanced.

Abstract: An apparatus for compensating the phase rotation in the feedback loop of a cartesian feedback power amplifier in a final transmitter stage for quadrature modulation of the complex difference signal between a complex input signal and the corresponding complex feedback signal with a complex modulation signal for forming a modulated real valued first signal and for quadrature modulation of the output signal from the power amplifier with a complex demodulation signal for forming the complex feedback signal. The phase shift between the first signal and the second signal and between the quadrature component of the first signal and the second signal is detected for determining the phase rotation of the feedback loop. Furthermore, the phase rotation of the complex modulation signal can be changed with a compensating phase rotation defined by the determined phase rotation.