Abstract: In one embodiment, a semiconductor die includes a polycrystalline semiconductor resistor structure (poly resistor structure). The poly resistor structure includes a resistive path between a first terminal and a second terminal. The poly resistor structure includes a first region having a net first conductivity type dopant concentration located in the resistance path and a second region having a net second conductivity type dopant concentration located in the resistance path. A silicide structure is located on both a first portion of the first region and a first portion of the second region to electrically connect the first portion of the first region and the first portion of the second region. In some embodiments, poly resistor structures with different conductivity type regions can be connected together.

Abstract: Various embodiments are directed to electrostatic discharge (ESD) protection apparatus comprising a bipolar junction transistor (BJT) having terminals, a field-effect transistor (FET) having terminals, and a common base region connected to a recombination region. The BJT and the FET are integrated with one another and include a common region that is shared by the BJT and the FET. The BJT and FET collectively bias the common base region and prevent triggering of the BJT by causing a potential of the common base region to follow a potential of one of the terminals of the BJT in response to an excessive but tolerable non-ESD voltage change at one or more of the terminals.

Abstract: Various embodiments are directed to electrostatic discharge (ESD) protection apparatus comprising a bipolar junction transistor (BJT) having terminals, a field-effect transistor (FET) having terminals, and a common base region connected to a recombination region. The BJT and the FET are integrated with one another and include a common region that is shared by the BJT and the FET. The BJT and FET collectively bias the common base region and prevent triggering of the BJT by causing a potential of the common base region to follow a potential of one of the terminals of the BJT in response to an excessive but tolerable non-ESD voltage change at one or more of the terminals.

Abstract: A semiconductor device includes a first dielectric layer on a substrate, the first dielectric layer including a first dielectric portion over a first doped well region of a first conductivity type and a second dielectric portion over a second doped well region of a second conductivity type, and a second dielectric layer on the substrate directly adjacent the first dielectric layer. The second dielectric layer is over the second doped well region. A first conductive gate structure is over the first and second dielectric layers. A third dielectric layer is on the substrate over the second doped well region and separated a first distance from the second dielectric layer. A second conductive gate structure is over the third dielectric layer. A third doped region of the second conductivity type is implanted in the second doped well region a second distance from the third dielectric layer and the second conductive gate structure.

Abstract: A semiconductor device includes a first dielectric layer on a substrate, the first dielectric layer including a first dielectric portion over a first doped well region of a first conductivity type and a second dielectric portion over a second doped well region of a second conductivity type, and a second dielectric layer on the substrate directly adjacent the first dielectric layer. The second dielectric layer is over the second doped well region. A first conductive gate structure is over the first and second dielectric layers. A third dielectric layer is on the substrate over the second doped well region and separated a first distance from the second dielectric layer. A second conductive gate structure is over the third dielectric layer. A third doped region of the second conductivity type is implanted in the second doped well region a second distance from the third dielectric layer and the second conductive gate structure.

Abstract: Disclosed is a PNP ESD integrated circuit, including a substrate, an active region formed within the substrate, the active region including at least one base region of a second conductivity type, a plurality of collector regions of a first conductivity type formed within the active region, a plurality of emitter regions of the first conductivity type formed within the active region, and a local interconnect layer (LIL) contacting the plurality of emitter regions and the plurality of collector regions, the LIL including cooling fin contacts formed on the collector regions to enhance the current handling capacity of the collector regions.

Abstract: Disclosed is a PNP ESD integrated circuit, including a substrate, an active region formed within the substrate, the active region including at least one base region of a second conductivity type, a plurality of collector regions of a first conductivity type formed within the active region, a plurality of emitter regions of the first conductivity type formed within the active region, and a local interconnect layer (LIL) contacting the plurality of emitter regions and the plurality of collector regions, the LIL including cooling fin contacts formed on the collector regions to enhance the current handling capacity of the collector regions.

Abstract: A semiconductor magnetic field sensor comprising a semiconductor well on top of a substrate layer is disclosed. The semiconductor well includes a first current collecting region and a second current collecting region and a current emitting region placed between the first current collecting region and the second current collecting region. The semiconductor well also includes a first MOS structure, having a first gate terminal, located between the first current collecting region and the current emitting region and a second MOS structure, having a second gate terminal, located between the current emitting region and the second current collecting region. In operation, the first gate terminal and the second gate terminal are biased for increasing a deflection length of a first current and of a second current. The deflection length is perpendicular to a plane defined by a surface of the semiconductor magnetic field sensor and parallel to a magnetic field.

Abstract: A semiconductor magnetic field sensor comprising a semiconductor well on top of a substrate layer is disclosed. The semiconductor well includes a first current collecting region and a second current collecting region and a current emitting region placed between the first current collecting region and the second current collecting region. The semiconductor well also includes a first MOS structure, having a first gate terminal, located between the first current collecting region and the current emitting region and a second MOS structure, having a second gate terminal, located between the current emitting region and the second current collecting region. In operation, the first gate terminal and the second gate terminal are biased for increasing a deflection length of a first current and of a second current. The deflection length is perpendicular to a plane defined by a surface of the semiconductor magnetic field sensor and parallel to a magnetic field.

Abstract: A sleeve segment for flexography has the shape of a sleeve with a first circular side containing a female registration element and a second circular side containing a male registration element. Also a method for manufacturing a flexographic sleeve segment, segmented sleeves and methods of flexographic printing.

Abstract: A sleeve segment for flexography has the shape of a sleeve with a first circular side containing a female registration element and a second circular side containing a male registration element. Also a method for manufacturing a flexographic sleeve segment, segmented sleeves and methods of flexographic printing.

Abstract: A silver halide coated photographic material is disclosed comprising sensitized silver bromide or silver bromoiodide tabular grains having an average thickness of less than 0.30 &mgr;m, in at least one light-sensitive layer and which is characterised in that it further contains in the said light-sensitive layer and/or at least one non-light sensitive layer at least one polyoxyethylene compound comprising from about 20 to 100 mole percent recurring units of the formula (Ia) and 80 to 0 mole % recurring units of the formula and wherein R represents an aliphatic, aromatic, or heterocyclic group, and X represents a halogen.

Abstract: A photographic sheet material processing apparatus has a plurality of treatment cells (12', 12", 12'") mounted one above another in a vertical stack to define a substantially vertical sheet material path (20) through the apparatus. The apparatus is cleaned by feeding a cleaning liquid to a first cell (12'), allowing at least a portion of said cleaning liquid to pass by gravity from said first cell (12') to at least one further cell (12"), and discharging said cleaning liquid from the apparatus. This process provides a convenient and efficient method of cleaning a vertical photographic sheet material processing apparatus.

Abstract: Apparatus for exposing and processing a photographic recording material, generally called imaging element, comprising (i) an exposing part, generally called imagesetter, in which the imaging element is imagewise exposed, and (ii) a processing part, generally called processor, in which the imaging element is wet processed, characterized in that the exposed imaging element is fed automatically from the imagesetter into the processor and in that the processing is carried out along a substantially vertical path. Also disclosed is a method for recording an image by using the above described apparatus for exposing and processing an imaging element.

Abstract: A roller, for use in a photographic sheet material processing apparatus, comprises a core (32) provided with a covering of relatively soft material (34). The roller has a length (L) of from 0.4 to 2.0 m. The core has a maximum diameter (D) of less than 0.04*L m. The roller is characterised by having a deflection as measured by a specific test and a weight (W) below levels defined by a specified boundary condition formulae (1) & (2). Rollers satisfying this condition are characterised in that the core is formed of a composite material comprising fibers and a resin matrix. Such rollers have a relatively small diameter, are light and yet still have sufficient stiffness to avoid substantial wrinkling of the sheet material in the apparatus and to satisfy the requirements of high processing quality.

Abstract: A method is disclosed for diagnosing the cause of bad performance of a printing plate obtained using the silver salt diffusion transfer process. According to the method a problem table is used to relate a problem to one or more possible causes. A test table is used to identify tests to verify a possible cause of the problem and a toolkit is provided including equipment needed for carrying out tests. Using the method a technician can identify possible causes for a problem, identify the tests capable of verifying one or more causes and perform the tests to confirm the cause of the problem. In the event a cause is not confirmed the technician can investigate other possible causes.

Abstract: Apparatus for processing a photographic sheet material in at least one processing stage which includes a feed roller array for transporting the material to or from the stage. The feed roller array has a pair of rollers supported on shafts for rotation and mounted with one superposed generally above the other. The upper roller is driven in a transport direction by a drive mechanism acting on an end of its shaft. The opposite ends of the shafts of the two rollers are journaled in frame members with the lower roller being supported for limited independent movement toward and away from the upper roller. The lower roller is normally biased into contact with the upper roller and is adapted to be displaced vertically away from the upper roller by a cam arrangement acting on the ends of its shaft. The upper roller is adapted to be shifted axially to disengage an end of its shaft from its journal to permit the upper roller to be removed manually from the apparatus.

Abstract: Device for cleaning the wall (1, 23) of a silo, comprising a compressed-air gun (12) suspended from two cables (14, 15) which are connected to two separate winches (16, 17), bearing on two pulleys (9, 10) fastened to a frame (6) which is arranged inside the silo and which is fixed to a rotary plate (4) which can move on a circular track (5) above an opening (2) in the silo.

Abstract: Provided is an apparatus for processing a photographic sheet (9) which comprises at least one station (4) with inlet and outlet pressure roller pairs (42 to 45) for transporting the sheet, spray means (22) for spraying processing liquid (21) onto at least one surface of the sheet, characterised in that the station (4) comprises sealing means for maintaining a liquid seal (58, 59) between at least one roller of at least one roller pair and an adjacent wall of the washing station. Also provided is an apparatus for making an offset printing plate according to the silver salt diffusion transfer process, using the described station (4) as washing station. Also provided is a method for making an offset printing plate using the above described apparatus for processing an imaging element.

Abstract: A method and apparatus for making an offset printing plate according to the silver salt diffusion transfer process comprises the step of washing the imaging element by applying a curtain of an aqueous medium onto the surface of the element at its silver halide emulsion layer side, across the width of the element, substantially transverse to its processing direction, and in countercurrent to the processing direction of the element.