Abstract: In the context of forming radiation patternable structures especially for EUV patterning, wafer structures are described comprising a substrate having a smooth top surface and a radiation sensitive organometallic coating having an average thickness of no more than 100 nm and no more than about 1 defect per square centimeter with a defect size of greater than 48 nm, evaluated with a 3 mm edge exclusion. Corresponding methods for forming a low defect coating comprise spin coating a purified radiation sensitive organometallic resist solution onto a wafer using a spin coater system comprising a delivery line and a delivery nozzle connected to the delivery line to form a coated wafer, and drying the coated wafer to form a radiation sensitive organometallic coating having no more than about 1 defect per square centimeter with a defect size of greater than 48 nm, evaluated with a 3 mm edge exclusion.

Abstract: A method for forming on a substrate a cross-linked layer for directing the self-assembly of a self-assembling material is provided. The method including: (a) providing a structure having the substrate; (b) providing on the substrate a layer of a photo- and thermally cross-linkable substance which, when crosslinked, is suitable for directing the self-assembly of a self-assembling material; (d) photocrosslinking the cross-linkable substance partially; and (d) cross-linking the substance further thermally, thereby forming the cross-linked layer.

Abstract: A method for directing a self-assembly of a block copolymer comprising a first and a second block is provided. The method including: providing a substrate comprising at least one concavity therein, the concavity comprising at least a sidewall and a bottom, the bottom having a preferential wetting affinity for the second block with respect to the first block; grafting a first grafting material onto the sidewall, selectively with respect to the bottom, the first grafting material having a preferential wetting affinity for the first block with respect to the second block; grafting a second grafting material onto the bottom and optionally onto the sidewall, the second grafting material having a preferential wetting affinity towards the first block with respect to the second block; and providing the block copolymer on the substrate, at least within the at least one concavity.

Abstract: A mask structure and a method for manufacturing a mask structure for a lithography process is provided. The method includes providing a substrate covered with an absorber layer on a side thereof; providing a patterned layer over the absorber layer, the patterned layer comprising at least one opening; and forming at least one assist mask feature in the at least one opening, wherein the at least one assist mask feature is formed by performing a directed self-assembly (DSA) patterning process comprising providing a BCP material in the at least one opening and inducing phase separation of a BCP material into a first component and a second component, the first component being the at least one assist mask feature and being periodically distributed with respect to the second component.

Abstract: A method for forming on a substrate a cross-linked layer for directing the self-assembly of a self-assembling material is provided. The method including: (a) providing a structure having the substrate; (b) providing on the substrate a layer of a photo- and thermally cross-linkable substance which, when crosslinked, is suitable for directing the self-assembly of a self-assembling material; (d) photocrosslinking the cross-linkable substance partially; and (d) cross-linking the substance further thermally, thereby forming the cross-linked layer.

Abstract: A mask structure and a method for manufacturing a mask structure for a lithography process is provided. The method includes providing a substrate covered with an absorber layer on a side thereof; providing a patterned layer over the absorber layer, the patterned layer comprising at least one opening; and forming at least one assist mask feature in the at least one opening, wherein the at least one assist mask feature is formed by performing a directed self-assembly (DSA) patterning process comprising providing a BCP material in the at least one opening and inducing phase separation of a BCP material into a first component and a second component, the first component being the at least one assist mask feature and being periodically distributed with respect to the second component.

Abstract: A method for directing a self-assembly of a block copolymer comprising a first and a second block is provided. The method including: providing a substrate comprising at least one concavity therein, the concavity comprising at least a sidewall and a bottom, the bottom having a preferential wetting affinity for the second block with respect to the first block; grafting a first grafting material onto the sidewall, selectively with respect to the bottom, the first grafting material having a preferential wetting affinity for the first block with respect to the second block; grafting a second grafting material onto the bottom and optionally onto the sidewall, the second grafting material having a preferential wetting affinity towards the first block with respect to the second block; and providing the block copolymer on the substrate, at least within the at least one concavity.

Abstract: A method for patterning a substrate is disclosed. The method includes applying a first directed self-assembly (DSA) patterning process that defines a first patterned layer on top of the substrate. The pattern of the first patterned layer is to be transferred into the substrate. The method also includes applying a planarizing layer on top of the first patterned layer. The method further includes applying a second DSA patterning process that defines a second patterned layer on top of the planarizing layer, thereby not patterning the planarizing layer. A pattern of the second patterned layer is to be transferred into the substrate. Projections of the pattern of the second patterned layer and the pattern of the first patterned layer on the substrate have no overlap. Additionally, the method includes transferring the patterns defined by the first patterned layer and the second patterned layer into the substrate.

Abstract: A method for patterning a substrate is disclosed. The method includes applying a first directed self-assembly (DSA) patterning process that defines a first patterned layer on top of the substrate. The pattern of the first patterned layer is to be transferred into the substrate. The method also includes applying a planarizing layer on top of the first patterned layer. The method further includes applying a second DSA patterning process that defines a second patterned layer on top of the planarizing layer, thereby not patterning the planarizing layer. A pattern of the second patterned layer is to be transferred into the substrate. Projections of the pattern of the second patterned layer and the pattern of the first patterned layer on the substrate have no overlap. Additionally, the method includes transferring the patterns defined by the first patterned layer and the second patterned layer into the substrate.