Abstract: A method of manufacturing a semiconductor body (1), whereby a carrier wafer (2) with an optically smooth main surface (3) is provided with a semiconducting top layer (4) in that the main surface (3) is brought into contact with an optically smooth main surface (5) of a monocrystalline semiconductor wafer (6), a permanent bond being formed, after which the semiconductor wafer (6) is made thin by means of a grinding process and a polishing process in that order. The semiconductor wafer (6) is made thin in the polishing process in that the exposed main surface (9) of the carrier wafer (2) is made wear-resistant, and in that then the carrier wafer (2) bonded to the semiconductor wafer (6) is arranged between two plane polishing discs (10) and (11) provided with a polishing liquid, upon which these polishing discs (10, 11) and the exposed main surfaces (8, 9) are moved relative to one another.

Abstract: A semiconductor device (10) is formed by providing first and second semiconductor bodies (1 and 11) each having first and second major surfaces (2 and 3) and (12 and 13), respectively, defining a rectifying junction pattern (21) adjacent to at least one (12) of the first major surfaces, and bonding the first major surfaces (2 and 12) together to join the two semiconductor bodies (1 and 11) to form the semiconductor device (10) in which the rectifying junction pattern 21 defines a path for the flow of charge carriers between the second major surfaces. The rectifying junction pattern (21) is defined at the one first major surface (12) by an electrically conductive pattern (20) forming a Schottky junction (21) with at least one of the first and second semiconductor bodies (1 and 11).

Abstract: The invention relates to a method of manufacturing a semiconductor device in which a polycrystalline or amorphous silicon oxide layer 3, which is provided on a silicon oxide layer 2 on a monocrystalline silicon substrate 1 and which is in contact with the silicon substrate 1 via an opening 4 in the silicon layer 2, is recrystallized by means of a heat treatment in the presence of means for concentrating the heat at the opening 4. In a simple and inexpensive manner, these means consist of a second silicon oxide layer 5 and a second polycrystalline silicon layer 6, the second silicon oxide layer 5 having a thickness at the openings 4 which is smaller than that of the rest of the layer 5.

Abstract: A method is set forth of bonding together two bodies (1, 2), according to which a first body (1) is provided with a flat surface (5) and the second body (2) is provided with a silicon oxide layer (4) with a flat surface (6), after which a connecting layer (7) containing boron is provided on at least one of the two flat surfaces. Subsequently, the two bodies (1, 2) are pressed together at elevated temperature, so that a borosilicate glass layer is formed. According to the invention, a layer of practically pure boron is used by way of connecting layer (7). Among the advantages of this is that the composition of the borosilicate glass layer is exclusively determined by the previously chosen layer thicknesses.

Abstract: A method of manufacturing a silicon-on-insulator semiconductor body is characterized by the steps consisting in that a carrier body is temporarily connected to a supporting body with accurately flat and parallel major surfaces and having a thickness of at least 1/8 of the largest dimension of the carrier body, in that the free major surface of the carrier body is mechanically polished to a precision of at least 1/2 .mu.m flatness, in that the carrier body is detached from the supporting body and the polished major surface is temporarily connected to the supporting body and the other major surface of the carrier body is mechanically polished to a precision of at least 1/2 .mu.m flatness and a parallelism between the major surfaces of at least 1/2 .mu.m whereupon a semiconductor body is connected through a major surface permanently to a major surface of the carrier body, in that then the semiconductor body is mechanically ground to a thickness of at least 50 .mu.

Abstract: In a method of manufacturing a semiconductor device, at least a support body (1) and a monocrystalline semiconductor body (2) are provided with at least one flat optically smooth surface obtained by means of bulk-reducing polishing (mirror polishing), while at least the semiconductor body is provided at the optically smooth surface with an oxide layer (3). The two bodies (1 and 2) are brought into contact with each other in a dust-free atmosphere after their flat surfaces have been cleaned in order to obtain a mechanical connection. Before the bodies are brought into contact with each other, at least the oxide layer (3) on the semiconductor body (2) is subjected to a bonding-activating operation, while after a connection has been formed between the surfaces, radiation (5) of a laser is focused on the connection surface of the two bodies and material of at least the semiconductor body is molten locally near the connection surface by means of the laser radiation.

Abstract: An optical device is manufactured by providing a disc-shaped body of a light-conducting material on a plane surface of a disc-shaped carrier body, grinding the light-conducting material mechanically to a thickness which exceeds the desired ultimate layer thickness by at least 50 .mu.m, subjecting the light-conducting material to alternate tribochemical and mechanical polishing treatments until a thickness is obtained which exceeds the desired ultimate layer thickness by approximately 10 .mu.m, and subsequently polishing the light-conductor body tribochemically until the desired layer thickness is obtained.

Abstract: A method for manufacturing a semiconductor device comprising at least a support body and a monocrystalline semiconductor body, in which both bodies are provided with at least one flat optically smooth surface obtained by means of bulk-reducing polishing (mirror polishing), and at least the semiconductor body is then provided at the optically smooth surface with an electrically insulating layer with at least the electrically insulating layer on the semiconductor body being subjected to a bonding-activating operation, whereupon both bodies after their flat surfaces have been cleaned, are contacted with each other in a dust-free atmosphere in order to obtain a rigid mechanical connection, after which they are subjected to a heat treatment of at least 250.degree. C., whereupon the semiconductor body is etched to a thin layer having a thickness lying between 0.05 and 100 .mu.m.

Abstract: In a method of manufacturing a semiconductor device of the "semiconductor on insulator" type comprising at least one carrier body and a monocrystalline semiconductor body, in a major surface (2) of a monocrystalline semiconductor body (1) grooves (3) are provided having a predetermined depth. The surface provided with grooves is coated with a layer (4) of material resistant to polishing; and this layer is coated with a layer (5) of a chemomechanically polishable material having a layer thickness exceeding the groove depth, the latter layer (5) being polished to flatness and smoothness. The polished surface of the semiconductor body (1) is connected to a smooth flat major surface of a carrier body (6).

Abstract: A method of manufacturing a semiconductor device in which a silicon layer (8) is epitaxially grown on the surface of a doped monocrystalline semiconductor body (7), whereafter a connection is established between said semiconductor body (7) and a second semiconductor body (1) which is used as a supporting body, while at least one of the surfaces of the two bodies is firstly provided with an insulating layer (2,3) and a rigid connection is established between the bodies, whereafter the monocrystalline semiconductor body (7) is electrochemically etched away down to the epitaxially grown silicon layer (8), parts of the insulating layer (2,3) being removed prior to establishing the connection between the bodies (1,7), whereafter a layer of electrically conducting material (6) is deposited on the surface with a thickness which is larger than that of the insulating layer, whereafter a polishing treatment is performed at least down to the insulating layer.

Abstract: A description is given of the composition and preparation of single phase crystals having a garnet structure and a lattice constant smaller than 11.9 .ANG.. The garnets correspond to the formula{Mn.sub.3-a-b Mg.sub.a M.sub.b }[Al.sub.2-c M'.sub.c ](Ge.sub.3-d-e Si.sub.d M".sub.e)O.sub.12 (I)wherein0.0.ltoreq.a.ltoreq.0.40.0.ltoreq.b.ltoreq.0.40.0.ltoreq.c.ltoreq.0.20.0.ltoreq.d.ltoreq.0.50.0.ltoreq.e.ltoreq.0.60.2.ltoreq.a+d.ltoreq.0.8.

Abstract: Two bodies are provided with mutually different metal layers. The combination of wringing in contact of the metal surfaces and low-temperature interdiffusion provides a strong bond between the two bodies.

Abstract: A multilayer optical component is provided in thin-film technology. The component comprises a monocrystalline substrate 1, for example a garnet substrate, which supports a stack 2 of monocrystalline layers 11-16, for example garnet layers, provided epitaxially on the substrate. The layers have alternately a high and a low refractive index and as regards thickness and refractive index are optimized to minimally or maximally reflect electromagnetic radiation of a given wavelength in the infrared or optical range of the spectrum. Said optical component is suitable in particular for use in high-power lasers.

Abstract: By means of a method of bonding a first part and a second part together, in which at least one thin layer is provided on at least one of the parts and is activated by a slight polishing treatment, after which the likewise activated surface of the second part is bonded to the activated surface of the first part by mechanical wringing, a rigid bond can be obtained in which the spacing between the parts can be accurately adjusted.

Abstract: A method is provided of manufacturing a device for conducting quantized particles such as photons and electrons. The method comprises the following steps:providing a layer of magnetizable material throughout the length of a conductor;dividing the conductor into conductor pieces having a predetermined length;aligning the conductor pieces by means of a magnetic field in such a manner that their ends are positioned perpendicularly to an abutment face;bundling the conductor pieces to a dense packing; andjoining the bundled conductor pieces to a mechanical unit.The method is preferably carried out in such a manner that the abutment face extends substantially perpendicularly to the direction of the gravitational field and that the attraction caused by the magnetic field is greater than and opposed to the force of gravity caused by the gravitational field.

Abstract: In optical multiplexers and demultiplexers which utilize interference filters and optical gratings losses and noise are reduced by converting the unpolarized light into linearly polarized light. This improves the efficiency of the filters and gratings and suppresses noise which is caused by fluctuations in the degree of polarization of unpolarized light because filters and gratings have different characteristics for the different polarization directions.

Abstract: A viewing screen is described, in particular the screen of a display tube, which has excellent anti-reflective properties and a method of making this screen anti-reflective. In this method the outer surface of the screen is mechanically roughened in conformity with specific requirements and subsequently an anti-reflective coating of constant thickness is applied to the roughened surface.

Abstract: Component for an integrated optical system, in particular for guiding electromagnetic radiation in the visible and/or infrared wavelength range. The component comprises a monocrystalline substrate of a material having a garnet structure and a refractive index n.sub.1. A dielectric layer having a refractive index n.sub.2 (n.sub.2 <n.sub.1) is grown epitaxially on a surface of the substrate. An optical waveguide layer having a refractive index n.sub.3 (n.sub.3 >n.sub.2) is grown epitaxially on the dielectric layer.

Abstract: Providing a transparent layer of an oxide of an element from group IVa of the Periodic Table, notably TiO.sub.2, by providing a substrate with a solution of a compound of the element which upon heating is converted into the relevant oxide, drying the film and heating the dried film so as to form the transparent layer of the oxide. The oxide thus obtained is a form having a comparatively low refractive index. By heating the product, after providing the film, rapidly to a temperature of above 700.degree. C., preferably above 1,000.degree. C., keeping it at this temperature for some time and then rapidly cooling it again, a modification having a higher refractive index (for example, for TiO.sub.2 rutile) is obtained.

Abstract: In a device for displaying three-dimensional pictures, N (with N=2, 3, 4 . . . ) recorded images corresponding to different spatial observation positions are displayed on one or more intermediate display screens (3, 4, 5, 82, 83, 84). The device comprises a viewing screen (6) having lens elements (20, 30) via which corresponding picture segments of the recorded images are displayed. An optical coupling (8, 44) having a plurality of light conductors (8) exists between the viewing screen and the intermediate display screen(s). The light conductors unambiguously associate groups of N corresponding picture segments with lens elements of the viewing screen. By means of the device, three-dimensional pictures can be observed without further auxiliary means for the viewer.