Abstract: A power module. The power module has a substrate and at least one power transistor situated on a lower side of the substrate, and at least one temperature sensor situated in the power module. At least one primary temperature sensor is situated on an upper side opposite the at least one power transistor or in an inner substrate layer situated above the at least one power transistor. At least one reference temperature sensor for providing a comparison temperature is situated at a distance from all power transistors, on the upper side or on one of the inner substrate layers. As a result, the transistor temperature can be measured closer to the source of the heat and a reference temperature is provided for detecting resistance changes due to material aging.

Abstract: A semiconductor power module including first and second power transistors situated in parallel between first collector and first emitter strip conductors. A first connection surface of each of the power transistors is electroconductively connected to the first collector strip conductor, and a second connection surface of each of the power transistors is electroconductively connected to the first emitter strip conductor, so that a current flowing between the first collector strip conductor and the first emitter strip conductor is divided between the power transistors when the power transistors are each conductively connected via an applied control voltage. A first external power contact is directly contacted with the first collector strip conductor at a first contact area, a second external power contact is contacted with the first emitter strip conductor at a second contact area via a first connecting element, and the second contact area is positioned asymmetrically between the power transistors.

Abstract: An electronic circuit module. The module has a multilayered LTCC circuit carrier made of structured inorganic substrate layers, which have electrical and/or thermal conduction structures for electrical and/or thermal conduction, at least one electronic component, which is arranged on a first side and/or an opposite second side of the LTCC circuit carrier, and at least one SiC power semiconductor. The at least one SiC power semiconductor is embedded in the multilayered LTCC circuit carrier and enclosed at least on three sides by the multilayered LTCC circuit carrier. Connection contacts of the SiC power semiconductor contact the electrical and/or thermal conduction structures of the LTCC circuit carrier.

Abstract: A method and device for adapting temperatures of semiconductor components. The device includes a first and second semiconductor component, and an evaluation unit. The evaluation unit is configured to ascertain a first and second temperature of the first and second semiconductor component, respectively, calculate a first and second temperature deviation, which represents a deviation of the first and second temperature from a reference temperature, respectively, and adapt a first gate voltage of the first semiconductor component and/or a second gate voltage of the second semiconductor component until the first temperature deviation and the second temperature deviation are smaller than or equal to a predefined maximum allowable temperature deviation from the reference temperature. The adaptation takes place only when a predefined allowable control range for the respective gate voltage is not exceeded, and when the first temperature and/or the second temperature is/are greater than the reference temperature.

Abstract: A power module. The power module includes a substrate and at least one power transistor arranged on a bottom side of the substrate. The power module includes at least one power connection connected to the substrate. A conductor loop for measuring temperature is arranged on an inner or outer substrate layer or a top side opposite the power transistor.

Abstract: A semiconductor power module including first and second power transistors situated in parallel between first collector and first emitter strip conductors. A first connection surface of each of the power transistors is electroconductively connected to the first collector strip conductor, and a second connection surface of each of the power transistors is electroconductively connected to the first emitter strip conductor, so that a current flowing between the first collector strip conductor and the first emitter strip conductor is divided between the power transistors when the power transistors are each conductively connected via an applied control voltage. A first external power contact is directly contacted with the first collector strip conductor at a first contact area, a second external power contact is contacted with the first emitter strip conductor at a second contact area via a first connecting element, and the second contact area is positioned asymmetrically between the power transistors.

Abstract: A device for converting electrical energy, including at least one switching-type semiconductor component, a cooling path for cooling the semiconductor component, and a device for determining a degradation of the cooling path based on a current having a predetermined current intensity that flows through the component. The device provides that the semiconductor component includes an optically active semiconductor material, which generates light having a brightness that is dependent on a temperature of the semiconductor component when the semiconductor component is traversed by current having a predetermined current intensity, and the device for determining the degradation includes a brightness sensor for recording the brightness of the generated light. The device has the advantage that the device for determining the degradation and the component are inherently galvanically isolated, and the degradation can be determined at a high resolution.

Abstract: For a power module comprising at least three levels stacked one above another, including: at least one heat sink (10) having a top side (11), at least one adhesion-promoting intermediate layer (20) applied to the top side (11) of the heat sink (10) and extending in a planar fashion and having a first side (21), which faces the top side (11) of the heat sink (10), and a second side (22), which faces away from the first side (21), at least one metallic layer (30) arranged on the second side (22) of the intermediate layer (20) and subdivided into conductor track sections (31) and having a contact side (32), which faces the second side (22) of the intermediate layer (20), wherein the power module furthermore comprises at least one electronic power component (40) which is applied to at least one conductor track section (31) of the metallic layer (30) and is electrically contacted electrically with the at least one conductor track section (31) of the metallic layer (30), it is proposed that the metallic layer (30)

Abstract: A device for converting electrical energy, including at least one switching-type semiconductor component, a cooling path for cooling the semiconductor component, and a device for determining a degradation of the cooling path based on a current having a predetermined current intensity that flows through the component. The device provides that the semiconductor component includes an optically active semiconductor material, which generates light having a brightness that is dependent on a temperature of the semiconductor component when the semiconductor component is traversed by current having a predetermined current intensity, and the device for determining the degradation includes a brightness sensor for recording the brightness of the generated light. The device has the advantage that the device for determining the degradation and the component are inherently galvanically isolated, and the degradation can be determined at a high resolution.

Abstract: For a power module comprising at least three levels stacked one above another, including: at least one heat sink (10) having a top side (11), at least one adhesion-promoting intermediate layer (20) applied to the top side (11) of the heat sink (10) and extending in a planar fashion and having a first side (21), which faces the top side (11) of the heat sink (10), and a second side (22), which faces away from the first side (21), at least one metallic layer (30) arranged on the second side (22) of the intermediate layer (20) and subdivided into conductor track sections (31) and having a contact side (32), which faces the second side (22) of the intermediate layer (20), wherein the power module furthermore comprises at least one electronic power component (40) which is applied to at least one conductor track section (31) of the metallic layer (30) and is electrically contacted electrically with the at least one conductor track section (31) of the metallic layer (30), it is proposed that the metallic layer (30)