Abstract: The present disclosure provides an antimicrobial composition comprising micelles and a carrier. Each of the micelles comprises a core of one or more essential oils covered, at least in part, by one or more cationic surfactants. The antimicrobial compositions can be used with a liquid, gas, or solid carrier. Examples disclosed within include the use of a 1-octyl-3-methylimidazolium salt, a 1.3-didecyl-2-methylimidazolium salt, a 1-decyl-3-methylimidazolium salt, and combinations thereof with rosemary, thyme, mint, and eucalyptus oil.

Abstract: A photo-electrochemical bio-sensor uses a semiconductor heterostructure located in an etching solution. An outer layer of the heterostructure is functionalized, such as with a self-assembled monolayer, to provide adherence of a charged molecule of interest. When contacted by a test solution, the functionalization immobilizes a quantity of the molecule that corresponds to its concentration in the test solution. The heterostructure undergoes photocorrosion when illuminated by a laser at a rate corresponding to the quantity of immobilized charged molecules. The rate of photocorrosion is monitored to determine the concentration of the molecule in the test solution. The monitoring may make use of a photoluminescent material in the heterostructure that emits photoluminescence in response to the laser illumination. The photoluminescence changes with the advancement of the photocorrosion, and the change is therefore indicative of the concentration of the molecule in the test solution.

Abstract: A photo-electrochemical bio-sensor uses a semiconductor heterostructure located in an etching solution. An outer layer of the heterostructure is functionalized, such as with a self-assembled monolayer, to provide adherence of a charged molecule of interest. When contacted by a test solution, the functionalization immobilizes a quantity of the molecule that corresponds to its concentration in the test solution. The heterostructure undergoes photocorrosion when illuminated by a laser at a rate corresponding to the quantity of immobilized charged molecules. The rate of photocorrosion is monitored to determine the concentration of the molecule in the test solution. The monitoring may make use of a photoluminescent material in the heterostructure that emits photoluminescence in response to the laser illumination. The photoluminescence changes with the advancement of the photocorrosion, and the change is therefore indicative of the concentration of the molecule in the test solution.

Abstract: A method and a device for detecting the presence of a predetermined substance, in which a quantum dot is produced on a substrate. The quantum dot emits a radiation at a predetermined wavelength, and is covered with a surface layer to which the predetermined substance attaches. A deviation of the value of a parameter related to the radiation is produced when the predetermined substance attaches to the surface layer. This deviation can be detected to thereby sense the presence of the predetermined substance.

Abstract: An apparatus for characterizing energy and direction dependence of intensity for an electromagnetic signal uses spectral analysis and has particular application in the field of surface plasmon resonance. An energy dependent filter is located in an imaging space of the signal and separates the signal in an energy dependent manner. A first portion of the signal output from the filter is limited to a predetermined range of narrow energy bands and is directed to a photodetector. The photodetector receives the first signal portion and detects signal intensities across the photodetector surface, each of the signal intensities corresponding to a specific wavevector direction and energy band within the predetermined range. The filter provides said energy dependent selection for each of a plurality of different ranges of energy bands so as to create a three-dimensional dataset indicative of the energy and direction dependence of the signal intensity.

Abstract: A sensing device for characterizing a substance by modifying modes of resonance of surface plasmons is described. The sensing device comprises: a photo-emitting substrate layer for generating a luminescence signal; a dielectric adaptive layer applied onto the photo-emitting substrate layer; and a sensing layer applied onto the dielectric adaptive layer, the sensing layer having a sensing surface for coupling with the substance to be characterized. The luminescence signal generates surface plasmons having modes of resonance at the interface of the sensing layer and the substance to be characterized. The substance to be characterized, when coupled to the sensing layer, characteristically modifies the modes of resonance of the surface plasmons.

Abstract: A method and a device for detecting the presence of a predetermined substance, in which a quantum dot is produced on a substrate. The quantum dot emits a radiation at a predetermined wavelength, and is covered with a surface layer to which the predetermined substance attaches. A deviation of the value of a parameter related to the radiation is produced when the predetermined substance attaches to the surface layer. This deviation can be detected to thereby sense the presence of the predetermined substance.

Abstract: Many integrated circuits require a multilayer structure which contains layer of an organic or polymeric material with a patterned metallic layer on it. Laser patterning has many favourable characteristics but it also damages the organic or polymeric material. A novel method is disclosed that makes possible laser patterning of conductive metal electrode deposited on top of an organic and/or polymeric material without significant ablation of the organic and/or polymeric material. The method can achieve higher patterning resolution, resulting in higher quality integrated circuits. The method is based on the application of a thin coating of an inexpensive anti-reflector deposited on top of the desired metal electrode which in turn lies on the organic and/or polymeric material. The thin anti-reflecting coating allows the use of a lower fluence laser for ablation of metal layer without damaging the underlying organic and/or polymeric material.

Abstract: Many integrated circuits require a multilayer structure which contains layer of an organic or polymeric material with a patterned metallic layer on it. Laser patterning has many favorable characteristics but it also damages the organic or polymeric material. A novel method is disclosed that makes possible laser patterning of conductive metal electrode deposited on top of an organic and/or polymeric material without significant ablation of the organic and/or polymeric material. The method can achieve higher patterning resolution, resulting in higher quality integrated circuits. The method is based on the application of a thin coating of an inexpensive anti-reflector deposited on top of the desired metal electrode which in turn lies on the organic and/or polymeric material. The thin anti-reflecting coating allows the use of a lower fluence laser for ablation of metal layer without damaging the underlying organic and/or polymeric material.

Abstract: To shift the bandgap of a quantum well microstructure, the surface of the microstructure is selectively irradiated in a pattern with ultra violet radiation to induce alteration of a near-surface region of said microstructure. Subsequently the microstructure is annealed to induce quantum well intermixing and thereby cause a bandgap shift dependent on said ultra violet radiation.

Abstract: Many integrated circuits require a multilayer structure which contains layer of an organic or polymeric material with a patterned metallic layer on it. Laser patterning has many favourable characteristics but it also damages the organic or polymeric material. A novel method is disclosed that makes possible laser patterning of conductive metal electrode deposited on top of an organic and/or polymeric material without significant ablation of the organic and/or polymeric material. The method can achieve higher patterning resolution, resulting in higher quality integrated circuits. The method is based on the application of a thin coating of an inexpensive anti-reflector deposited on top of the desired metal electrode which in turn lies on the organic and/or polymeric material. The thin anti-reflecting coating allows the use of a lower fluence laser for ablation of metal layer without damaging the underlying organic and/or polymeric material.

Abstract: To shift the bandgap of a quantum well microstructure, the surface of the microstructure is selectively irradiated in a pattern with ultra violet radiation to induce alteration of a near-surface region of said microstructure. Subsequently the microstructure is annealed to induce quantum well intermixing and thereby cause a bandgap shift dependent on said ultra violet radiation.

Abstract: To shift the bandgap of a quantum well microstructure, the surface of the microstructure is selectively irradiated in a pattern with ultra violet radiation to induce alteration of a near-surface region of said microstructure. Subsequently the microstructure is annealed to induce quantum well intermixing and thereby cause a bandgap shift dependent on said ultra violet radiation.

Abstract: A process for the formation of a cap layer for semiconductors with a low degree of contamination wherein the cap layer is easily formed on the surface of a semiconductor, and binding force thereof with the surface of the semiconductor is strong and stabilized, besides only the cap layer is selectively removed easily, comprises the steps of introducing nitrogen atom into a surface of a semiconductor; combining a component element of the semiconductor in the vicinity of the surface of the semiconductor into which the nitrogen atom has been introduced with the nitrogen atom to form a nitride compound being a compound of the component element of the semiconductor and the nitrogen atom; and utilizing the nitride compound as a cap layer for the surface of the semiconductor.

Abstract: A process for the formation of a cap layer for semiconductors with a low degree of contamination wherein the cap layer is easily formed on the surface of a semiconductor, and binding force thereof with the surface of the semiconductor is strong and stabilized, besides only the cap layer is selectively removed easily, comprises the steps of introducing nitrogen atom into a surface of a semiconductor; combining a component element of the semiconductor in the vicinity of the surface of the semiconductor into which the nitrogen atom has been introduced with the nitrogen atom to form a nitride compound being a compound of the component element of the semiconductor and the nitrogen atom; and utilizing the nitride compound as a cap layer for the surface of the semiconductor.