Patents by Inventor Jan TORGERSEN

Jan TORGERSEN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Atomic layer deposition with passivation treatment
    Patent number: 11834741
    Abstract: A method includes: 1) performing an atomic layer deposition cycle including (a) introducing precursors into a deposition chamber housing a substrate to deposit a material on the substrate; and (b) introducing a passivation gas into the deposition chamber to passivate a surface of the material; and 2) repeating 1) a plurality of times to form a film of the material.
    Type: Grant
    Filed: September 7, 2017
    Date of Patent: December 5, 2023
    Assignee: The Board of Trustees of the Leland Stanford Junior University
    Inventors: Friedrich B. Prinz, Shicheng Xu, Timothy English, John Provine, Dickson Thian, Jan Torgersen
  • ELECTROCHEMICAL CONVERTER APPARATUS AND METHOD
    Publication number: 20220302530
    Abstract: Aspects of the disclosure are directed to apparatuses and methods therefor, involving electrochemical conversion. As may be implemented in accordance with one or more embodiments, an apparatus includes an enclosure, an electrochemical converter and an end plate. The electrochemical converter has a membrane between respective electrodes and is configured to convert between a chemical material and energy. The end plate is coupled to the enclosure via an interference fit and forms a chamber with the enclosure and encloses the electrochemical converter. The end plate is configured to/used to apply compressive force to the electrochemical converter, via the interference fit.
    Type: Application
    Filed: March 18, 2021
    Publication date: September 22, 2022
    Inventors: Shicheng Xu, Jan Torgersen
  • ATOMIC LAYER DEPOSITION WITH PASSIVATION TREATMENT
    Publication number: 20190249301
    Abstract: A method includes: 1) performing an atomic layer deposition cycle including (a) introducing precursors into a deposition chamber housing a substrate to deposit a material on the substrate; and (b) introducing a passivation gas into the deposition chamber to passivate a surface of the material; and 2) repeating 1) a plurality of times to form a film of the material.
    Type: Application
    Filed: September 7, 2017
    Publication date: August 15, 2019
    Inventors: Friedrich B. PRINZ, Shicheng XU, Timothy ENGLISH, John PROVINE, Dickson THIAN, Jan TORGERSEN