Abstract: The present invention provides a high-crystallinity barium titanate film structure, a method of preparation and an application thereof, and relates to the field of materials and devices. The method includes the steps of depositing, on a substrate, a barium titanate layer with a (001) or (111) crystal orientation by atomic layer deposition in a high vacuum environment and at a low temperature of 450° C. or below, wherein a Ba/Ti ratio in the barium titanate layer is 0.9-1.5; and performing plasma annealing treatment on the barium titanate layer at a low temperature of 450° C. or below without breaking vacuum to form a high-crystallinity barium titanate layer having the (001) or (111) crystal orientation. The film structure may further comprise top and bottom electrodes formed above and below the barium titanate layer. The present invention solves the problem that an existing method for obtaining a crystalline BTO film is not applicable to back-end of line (BEOL) integration processes.

Abstract: A magnetic sensor includes a piezomagnetic component which includes a first piezomagnetic element and a second piezomagnetic element that are arranged opposite to each other, a magnetostrictive component which includes a first magnetostrictive element and a second magnetostrictive element arranged opposite to each other on the same side of the first piezomagnetic element and the second piezomagnetic element, respectively, and a piezoelectric component which includes a first piezoelectric element deposited underneath the first piezomagnetic element, a second piezoelectric element deposited underneath the second piezomagnetic element, a third piezoelectric element deposited underneath the first magnetostrictive element, and a fourth piezoelectric element deposited underneath the second magnetostrictive element.

Abstract: A magnetic sensor includes a piezomagnetic component which includes a first piezomagnetic element and a second piezomagnetic element that are arranged opposite to each other, a magnetostrictive component which includes a first magnetostrictive element and a second magnetostrictive element arranged opposite to each other on the same side of the first piezomagnetic element and the second piezomagnetic element, respectively, and a piezoelectric component which includes a first piezoelectric element deposited underneath the first piezomagnetic element, a second piezoelectric element deposited underneath the second piezomagnetic element, a third piezoelectric element deposited underneath the first magnetostrictive element, and a fourth piezoelectric element deposited underneath the second magnetostrictive element.

Abstract: The disclosed non-volatile memory cell comprises a storage layer of an electrically insulating polarisable material in which data is recordable as a direction of electric polarisation, preferably of ferroelectric material, arranged between a magnetically frustrated layer, preferably of Mn-based antiperovskite piezomagnetic material and a conduction electrode. The magnetically frustrated layer has a different change in density of states relative to the conduction electrode in response to a change in electric polarisation of the storage layer, such that an electron or spin tunnelling resistance across the storage layer is dependent on the direction of electric polarisation.

Abstract: A non-volatile memory cell comprising: a storage layer comprised of a ferromagnetic or ferroelectric material in which data is recordable as a direction of magnetic or electric polarisation; a piezomagnetic layer comprised of an antiperovskite piezomagnetic material selectively having a first type of effect on the storage layer and a second type of effect on the storage layer dependent upon the magnetic state and strain in the piezomagnetic layer; and a strain inducing layer for inducing a strain in the piezomagnetic layer thereby to switch from the first type of effect to the second type of effect.

Abstract: The disclosed non-volatile memory cell comprises a storage layer of an electrically insulating polarisable material in which data is recordable as a direction of electric polarisation, preferably of ferroelectric material, arranged between a magnetically frustrated layer, preferably of Mn-based antiperovskite piezomagnetic material and a conduction electrode. The magnetically frustrated layer has a different change in density of states relative to the conduction electrode in response to a change in electric polarisation of the storage layer, such that an electron or spin tunnelling resistance across the storage layer is dependent on the direction of electric polarisation.

Abstract: A non-volatile memory cell comprising: a storage layer comprised of a ferromagnetic or ferroelectric material in which data is recordable as a direction of magnetic or electric polarisation; a piezomagnetic layer comprised of an antiperovskite piezomagnetic material selectively having a first type of effect on the storage layer and a second type of effect on the storage layer dependent upon the magnetic state and strain in the piezomagnetic layer; and a strain inducing layer for inducing a strain in the piezomagnetic layer thereby to switch from the first type of effect to the second type of effect.

Abstract: A method of operating a magnetoresistive device is described. The device comprises a ferromagnetic region configured to exhibit magnetic anisotropy and to allow magnetisation thereof to be switched between at least first and second orientations and a gate capacitively coupled to the ferromagnetic region. The method comprises applying an electric field pulse to the ferromagnetic region so as to cause orientation of magnetic anisotropy to change for switching magnetisation between the first and second orientations.

Abstract: A method of operating a magnetoresistive device is described. The device comprises a ferromagnetic region configured to exhibit magnetic anisotropy and to allow magnetisation thereof to be switched between at least first and second orientations and a gate capacitively coupled to the ferromagnetic region. The method comprises applying an electric field pulse to the ferromagnetic region so as to cause orientation of magnetic anisotropy to change for switching magnetisation between the first and second orientations.

Abstract: A method of operating a magnetoresistive device is described. The device comprises a ferromagnetic region configured to exhibit magnetic anisotropy and to allow magnetisation thereof to be switched between at least first and second orientations and a gate capacitively coupled to the ferromagnetic region. The method comprises applying an electric field pulse to the ferromagnetic region so as to cause orientation of magnetic anisotropy to change for switching magnetisation between the first and second orientations.

Abstract: A method of operating a magnetoresistive device is described. The device comprises a ferromagnetic region configured to exhibit magnetic anisotropy and to allow magnetisation thereof to be switched between at least first and second orientations and a gate capacitively coupled to the ferromagnetic region. The method comprises applying an electric field pulse to the ferromagnetic region so as to cause orientation of magnetic anisotropy to change for switching magnetisation between the first and second orientations.