Abstract: A computer-aided testing is provided for design verification of integrated circuits. More specifically, a method of generating a test case in design rule checking is provided for that includes extracting coordinates of an error marker for a first error identified in an integrated circuit design. The method further includes identifying a first rectangle that encloses the error marker. The method further includes generating a first test case based on data of the integrated circuit design contained within the rectangle. The method further includes determining whether the first test case is representative of the first error. The method further includes in response to determining the first test case is not representative of the first error, identifying a second rectangle that is between the first rectangle and a third rectangle. The method further includes generating a second test case based on data of the integrated circuit design contained within the second rectangle.

Abstract: Aspects of the present disclosure include methods and test structures for an intermediate metal level of an integrated circuit (IC). A method according to the present disclosure can include: fabricating a first plurality of metal levels including an intermediate metal level of an IC structure, the intermediate metal level being one of a plurality of metal levels in the IC structure other than a capping metal level of the IC structure; performing a first functional test on a first circuit positioned within the intermediate metal level; fabricating a second plurality of metal levels after performing the first functional test, the second plurality of metal levels including the capping metal level of the IC structure; and performing a second functional test on a second circuit positioned within the plurality of metal levels, after the fabricating of the capping metal level.

Abstract: A multi-time programmable memory (MTPM) memory cell and method of operating. Each MTPM bit cell including a first FET transistor and a second FET transistor having a first common connection, and said second FET transistor and a third FET transistor having a second common connection, said first and second connected FET transistors programmable to store a first bit value, and said second FET and said third connected FET transistors programmable to store a second bit value, wherein said first FET transistor exhibits a low threshold voltage value (LVT), said second FET transistor exhibits an elevated threshold voltage value HVT and said third FET transistor exhibits a threshold value LVT lower than HVT. The MTPM cell enables two bits of information to be stored as default bit values like an electrical fuse. To store opposite bit values, the LVT transistors are programmed such that their threshold voltage is higher than that of HVT.

Abstract: Aspects of the present disclosure include methods and test structures for an intermediate metal level of an integrated circuit (IC). A method according to the present disclosure can include: fabricating a first plurality of metal levels including an intermediate metal level of an IC structure, the intermediate metal level being one of a plurality of metal levels in the IC structure other than a capping metal level of the IC structure; performing a first functional test on a first circuit positioned within the intermediate metal level; fabricating a second plurality of metal levels after performing the first functional test, the second plurality of metal levels including the capping metal level of the IC structure; and performing a second functional test on a second circuit positioned within the plurality of metal levels, after the fabricating of the capping metal level.

Abstract: A Multi-Time-Programmable-Memory (MTPM) array architecture, whose structure comprising of having Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET) memory elements arranged in a set of twin-pairs coupled by wordlines (WLs), bitlines (BLs) and sourcelines (SLs). More specifically, the use of inactive portions of the MTPM array structure as substitutes for conventional BL write driver areas by utilizing a set of twin-pairs acting in parallel. These substituted twin-pair sets will improve programming efficiency (VGS) and retention (VDS) through a lowering Interconnect (IR) drop and VDS drops at the BL write driver.

Abstract: Disclosed are integrated circuit (IC) design methods, systems and computer program products. During IC design, an electrical netlist with built-in electrical resistance elements (i.e., electrical resistors) is extracted based on an IC design layout. A thermal netlist with built-in thermal resistance elements (i.e., thermal resistors) is automatically extracted based on the electrical netlist. This thermal netlist identifies thermal resistors, external thermal nodes and internal thermal node(s) and does so such that there is one-to-one mapping of the thermal resistors to electrical resistors in the electrical netlist, one-to-one mapping of the external thermal nodes to input, output and power supply nodes in the electrical netlist and one-to-one mapping of the internal thermal node(s) to element(s) (e.g., library and/or customized elements) in the electrical netlist.

Abstract: Disclosed are integrated circuit (IC) design methods, systems and computer program products. During IC design, an electrical netlist with built-in electrical resistance elements (i.e., electrical resistors) is extracted based on an IC design layout. A thermal netlist with built-in thermal resistance elements (i.e., thermal resistors) is automatically extracted based on the electrical netlist. This thermal netlist identifies thermal resistors, external thermal nodes and internal thermal node(s) and does so such that there is one-to-one mapping of the thermal resistors to electrical resistors in the electrical netlist, one-to-one mapping of the external thermal nodes to input, output and power supply nodes in the electrical netlist and one-to-one mapping of the internal thermal node(s) to element(s) (e.g., library and/or customized elements) in the electrical netlist.

Abstract: A multi-time programmable memory (MTPM) memory cell and method of operating. Each MTPM bit cell including a first FET transistor and a second FET transistor having a first common connection, and said second FET transistor and a third FET transistor having a second common connection, said first and second connected FET transistors programmable to store a first bit value, and said second FET and said third connected FET transistors programmable to store a second bit value, wherein said first FET transistor exhibits a low threshold voltage value (LVT), said second FET transistor exhibits an elevated threshold voltage value HVT and said third FET transistor exhibits a threshold value LVT lower than HVT. The MTPM cell enables two bits of information to be stored as default bit values like an electrical fuse. To store opposite bit values, the LVT transistors are programmed such that their threshold voltage is higher than that of HVT.

Abstract: A multi-time programmable memory (MTPM) memory cell and method of operating. Each MTPM bit cell including a first FET transistor and a second FET transistor having a first common connection, and said second FET transistor and a third FET transistor having a second common connection, said first and second connected FET transistors programmable to store a first bit value, and said second FET and said third connected FET transistors programmable to store a second bit value, wherein said first FET transistor exhibits a low threshold voltage value (LVT), said second FET transistor exhibits an elevated threshold voltage value HVT and said third FET transistor exhibits a threshold value LVT lower than HVT. The MTPM cell enables two bits of information to be stored as default bit values like an electrical fuse. To store opposite bit values, the LVT transistors are programmed such that their threshold voltage is higher than that of HVT.

Abstract: A multi-time programmable memory (MTPM) memory cell and method of operating. Each MTPM bit cell including a first FET transistor and a second FET transistor having a first common connection, and said second FET transistor and a third FET transistor having a second common connection, said first and second connected FET transistors programmable to store a first bit value, and said second FET and said third connected FET transistors programmable to store a second bit value, wherein said first FET transistor exhibits a low threshold voltage value (LVT), said second FET transistor exhibits an elevated threshold voltage value HVT and said third FET transistor exhibits a threshold value LVT lower than HVT. The MTPM cell enables two bits of information to be stored as default bit values like an electrical fuse. To store opposite bit values, the LVT transistors are programmed such that their threshold voltage is higher than that of HVT.

Abstract: Approaches for a memory including a cell array are provided. The memory includes a first device of the cell array which is connected to a bitline and a node and controlled by a word line, and a second device of the cell array which comprises a third device which is connected to a source line and the node and controlled by the word line and a fourth device which is connected between the word line and the node. In the memory, in response to another word line in the cell array being activated and the word line not being activated to keep the first device in an unprogrammed state, the third device isolates and floats the node such that a voltage level of a gate to source of the first device is clamped down by the fourth device to a voltage level around zero volts.

Abstract: Approaches for a memory including a cell array are provided. The memory includes a first device of the cell array which is connected to a bitline and a node and controlled by a word line, and a second device of the cell array which comprises a third device which is connected to a source line and the node and controlled by the word line and a fourth device which is connected between the word line and the node. In the memory, in response to another word line in the cell array being activated and the word line not being activated to keep the first device in an unprogrammed state, the third device isolates and floats the node such that a voltage level of a gate to source of the first device is clamped down by the fourth device to a voltage level around zero volts.

Abstract: A computer-aided testing is provided for design verification of integrated circuits. More specifically, a method of generating a test case in design rule checking is provided for that includes extracting coordinates of an error marker for a first error identified in an integrated circuit design. The method further includes identifying a first rectangle that encloses the error marker. The method further includes generating a first test case based on data of the integrated circuit design contained within the rectangle. The method further includes determining whether the first test case is representative of the first error. The method further includes in response to determining the first test case is not representative of the first error, identifying a second rectangle that is between the first rectangle and a third rectangle. The method further includes generating a second test case based on data of the integrated circuit design contained within the second rectangle.

Abstract: A computer-aided testing is provided for design verification of integrated circuits. More specifically, a method of generating a test case in design rule checking is provided for that includes extracting coordinates of an error marker for a first error identified in an integrated circuit design. The method further includes identifying a first rectangle that encloses the error marker. The method further includes generating a first test case based on data of the integrated circuit design contained within the rectangle. The method further includes determining whether the first test case is representative of the first error. The method further includes in response to determining the first test case is not representative of the first error, identifying a second rectangle that is between the first rectangle and a third rectangle. The method further includes generating a second test case based on data of the integrated circuit design contained within the second rectangle.

Abstract: A computer-aided testing is provided for design verification of integrated circuits. More specifically, a method of generating a test case in design rule checking is provided for that includes extracting coordinates of an error marker for a first error identified in an integrated circuit design. The method further includes identifying a first rectangle that encloses the error marker. The method further includes generating a first test case based on data of the integrated circuit design contained within the rectangle. The method further includes determining whether the first test case is representative of the first error. The method further includes in response to determining the first test case is not representative of the first error, identifying a second rectangle that is between the first rectangle and a third rectangle. The method further includes generating a second test case based on data of the integrated circuit design contained within the second rectangle.

Abstract: Approaches for generating test cases for design rule checking are provided. A method includes extracting coordinates of an error marker in an integrated circuit design. The method also includes creating an error polygon using the coordinates. The method additionally includes selecting polygons in the design that touch the error polygon. The method further includes identifying a rectangle that encloses the selected polygons. The method also includes generating a test case based on data of the design contained within the rectangle. The extracting, the creating, the selecting, the identifying, and the generating are performed using a computer device.

Abstract: Approaches for generating test cases for design rule checking are provided. A method includes extracting coordinates of an error marker in an integrated circuit design. The method also includes creating an error polygon using the coordinates. The method additionally includes selecting polygons in the design that touch the error polygon. The method further includes identifying a rectangle that encloses the selected polygons. The method also includes generating a test case based on data of the design contained within the rectangle. The extracting, the creating, the selecting, the identifying, and the generating are performed using a computer device.