Abstract: A device includes a table surface defining a horizontal plane having an x-axis and a y-axis orthogonal to the x-axis and the x-axis and y-axis lie in the horizontal plane; a scribe mounted below the horizontal plane, the scribe further disposed to present at least a portion of the tip above the horizontal plane; a rail arranges parallel to the y-axis and movable in a direction parallel to the x-axis; a sample guide configured in relation to the horizontal plane so that the sample guide arranges parallel to the x-axis and movable in a direction parallel to the y-axis; a scribe stop guide configured in relation to the horizontal plane so that the scribe guide arranges parallel to the x-axis and movable in a direction parallel to the y-axis, whereby the sample guide moves independent of the scribe stop, the scribe stop further comprising a locking mechanism.

Abstract: A device includes a table surface defining a horizontal plane having an x-axis and a y-axis orthogonal to the x-axis and the x-axis and y-axis lie in the horizontal plane; a scribe mounted below the horizontal plane, the scribe further disposed to present at least a portion of the tip above the horizontal plane; a rail arranges parallel to the y-axis and movable in a direction parallel to the x-axis; a sample guide configured in relation to the horizontal plane so that the sample guide arranges parallel to the x-axis and movable in a direction parallel to the y-axis; a scribe stop guide configured in relation to the horizontal plane so that the scribe guide arranges parallel to the x-axis and movable in a direction parallel to the y-axis, whereby the sample guide moves independent of the scribe stop, the scribe stop further comprising a locking mechanism.

Abstract: Embodiments provide electron-conducting, electron-transparent substrates that are chemically derivatized (e.g., functionalized) to enhance and facilitate the deposition of nanoscale materials thereupon, including both hard and soft nanoscale materials. In various embodiments, the substrates may include an electron-conducting mesh support, for example, a carbon, copper, nickel, molybdenum, beryllium, gold, silicon, GaAs, or oxide (e.g., SiO2, TiO2, ITO, or Al2O3) support, or a combination thereof, having one or more apertures. In various embodiments, the mesh support may be coated with an electron conducting, electron transparent carbon film membrane that has been chemically derivatized to promote adhesion and/or affinity for various materials, including hard inorganic materials and soft materials, such as polymers and biological molecules.

Abstract: Embodiments provide electron-conducting, electron-transparent substrates that are chemically derivatized (e.g., functionalized) to enhance and facilitate the deposition of nanoscale materials thereupon, including both hard and soft nanoscale materials. In various embodiments, the substrates may include an electron-conducting mesh support, for example, a carbon, copper, nickel, molybdenum, beryllium, gold, silicon, GaAs, or oxide (e.g., SiO2, TiO2, ITO, or Al2O3) support, or a combination thereof, having one or more apertures. In various embodiments, the mesh support may be coated with an electron conducting, electron transparent carbon film membrane that has been chemically derivatized to promote adhesion and/or affinity for various materials, including hard inorganic materials and soft materials, such as polymers and biological molecules.

Abstract: The present invention provides methods, devices, and systems for analyzing defects in an object such as a semiconductor wafer. In one embodiment, it provides a method of characterizing defects in semiconductor wafers during fabrication in a semiconductor fabrication facility. This method comprises the following actions. The semiconductor wafers are inspected to locate defects. Locations corresponding to the located defects are then stored in a defect file. A dual charged-particle beam system is automatically navigated to the vicinity defect location using information from the defect file. The defect is automatically identified and a charged particle beam image of the defect is then obtained. The charged particle beam image is then analyzed to characterize the defect. A recipe is then determined for further analysis of the defect. The recipe is then automatically executed to cut a portion of the defect using a charged particle beam.

Abstract: The present invention provides methods, devices, and systems for analyzing defects in an object such as a semiconductor wafer. In one embodiment, it provides a method of characterizing defects in semiconductor wafers during fabrication in a semiconductor fabrication facility. This method comprises the following actions. The semiconductor wafers are inspected to locate defects. Locations corresponding to the located defects are then stored in a defect file. A dual charged-particle beam system is automatically navigated to the vicinity defect location using information from the defect file. The defect is automatically identified and a charged particle beam image of the defect is then obtained. The charged particle beam image is then analyzed to characterize the defect. A recipe is then determined for further analysis of the defect. The recipe is then automatically executed to cut a portion of the defect using a charged particle beam.

Abstract: The present invention provides methods, devices, and systems for analyzing defects in an object such as a semiconductor wafer. In one embodiment, it provides a method of characterizing defects in semiconductor wafers during fabrication in a semiconductor fabrication facility. This method comprises the following actions. The semiconductor wafers are inspected to locate defects. Locations corresponding to the located defects are then stored in a defect file. A dual charged-particle beam system is automatically navigated to the vicinity defect location using information from the defect file. The defect is automatically identified and a charged particle beam image of the defect is then obtained. The charged particle beam image is then analyzed to characterize the defect. A recipe is then determined for further analysis of the defect. The recipe is then automatically executed to cut a portion of the defect using a charged particle beam.

Abstract: The present invention provides methods, devices, and systems for analyzing defects in an object such as a semiconductor wafer. In one embodiment, it provides a method of characterizing defects in semiconductor wafers during fabrication in a semiconductor fabrication facility. This method comprises the following actions. The semiconductor wafers are inspected to locate defects. Locations corresponding to the located defects are then stored in a defect file. A dual charged-particle beam system is automatically navigated to the vicinity defect location using information from the defect file. The defect is automatically identified and a charged particle beam image of the defect is then obtained. The charged particle beam image is then analyzed to characterize the defect. A recipe is then determined for further analysis of the defect. The recipe is then automatically executed to cut a portion of the defect using a charged particle beam.

Abstract: The present invention provides methods, devices, and systems for analyzing defects in an object such as a semiconductor wafer. In one embodiment, it provides a method of characterizing defects in semiconductor wafers during fabrication in a semiconductor fabrication facility. This method comprises the following actions. The semiconductor wafers are inspected to locate defects. Locations corresponding to the located defects are then stored in a defect file. A dual charged-particle beam system is automatically navigated to the vicinity defect location using information from the defect file. The defect is automatically identified and a charged particle beam image of the defect is then obtained. The charged particle beam image is then analyzed to characterize the defect. A recipe is then determined for further analysis of the defect. The recipe is then automatically executed to cut a portion of the defect using a charged particle beam.

Abstract: The present invention provides methods, devices, and systems for analyzing defects in an object such as a semiconductor wafer. In one embodiment, it provides a method of characterizing defects in semiconductor wafers during fabrication in a semiconductor fabrication facility. This method comprises the following actions. The semiconductor wafers are inspected to locate defects. Locations corresponding to the located defects are then stored in a defect file. A dual charged-particle beam system is automatically navigated to the vicinity defect location using information from the defect file. The defect is automatically identified and a charged particle beam image of the defect is then obtained. The charged particle beam image is then analyzed to characterize the defect. A recipe is then determined for further analysis of the defect. The recipe is then automatically executed to cut a portion of the defect using a charged particle beam.

Abstract: The present invention provides methods, devices, and systems for analyzing defects in an object such as a semiconductor wafer. In one embodiment, it provides a method of characterizing defects in semiconductor wafers during fabrication in a semiconductor fabrication facility. This method comprises the following actions. The semiconductor wafers are inspected to locate defects. Locations corresponding to the located defects are then stored in a defect file. A dual charged-particle beam system is automatically navigated to the vicinity defect location using information from the defect file. The defect is automatically identified and a charged particle beam image of the defect is then obtained. The charged particle beam image is then analyzed to characterize the defect. A recipe is then determined for further analysis of the defect. The recipe is then automatically executed to cut a portion of the defect using a charged particle beam.

Abstract: The present invention provides methods, devices, and systems for analyzing defects in an object such as a semiconductor wafer. In one embodiment, it provides a method of characterizing defects in semiconductor wafers during fabrication in a semiconductor fabrication facility. This method comprises the following actions. The semiconductor wafers are inspected to locate defects. Locations corresponding to the located defects are then stored in a defect file. A dual charged-particle beam system is automatically navigated to the vicinity defect location using information from the defect file. The defect is automatically identified and a charged particle beam image of the defect is then obtained. The charged particle beam image is then analyzed to characterize the defect. A recipe is then determined for further analysis of the defect. The recipe is then automatically executed to cut a portion of the defect using a charged particle beam.