Abstract: Provided is a heater for an aerosol-generating device including a first electrically conductive pattern configured to perform heating and a second electrically conductive pattern arranged in parallel with the first electrically conductive pattern. The first electrically conductive pattern and/or the second electrically conductive pattern may include a material having a relatively small resistance temperature coefficient. Accordingly, a temperature increase rate of the heater may be greatly improved.

Abstract: A method of depositing a thin film using a hafnium compound includes depositing a primary thin film and depositing a secondary thin film. The depositing of the primary thin film and the depositing of the secondary thin film are repeated once or more. The depositing of the primary thin film includes feeding a first reactive gas, purging the first reactive gas, feeding a third reactive gas, and purging the third reactive gas, and repeating the aforementioned steps a first plurality of (N) times. The feeding of the first reactive gas includes feeding a second reactive gas, purging the second reactive gas, feeding the third reactive gas, and purging the third reactive gas, and repeating the aforementioned steps a second plurality of (M) times.

Abstract: A remote-plasma ALD apparatus includes a reaction chamber, an exhaust line for exhausting gas from the reaction chamber, a first reactive gas supply unit for selectively supplying a first reactive gas to the reactant chamber or the exhaust line, a first reactive gas transfer line for connecting the first reactive gas supply unit and the reactant chamber, a first bypass line for connecting the first reactive gas supply line and the exhaust line, a radical supply unit for generating radicals and selectively supplying the radicals to the reactant chamber or the exhaust line, a radical transfer line for connecting the radical supply unit and the reactant chamber, a second bypass line for connecting the radical supply unit and the exhaust line, and a main purge gas supply unit for supplying a main purge gas to the first reactant transfer line and/or the radical transfer line.

Abstract: A reactor for thin film deposition and a thin film deposition method using the reactor are provided. The reactor includes: a reactor block which receives a wafer transferred through a wafer transfer slit; a wafer block which is installed in the reactor block to receive the wafer thereon; a top plate disposed to cover the reactor block; a shower head which is mounted on the bottom of the top plate and diffuses gas toward the wafer; and an exhaust unit which exhausts the gas from the reactor block. A first supply pipeline which supplies a first reactant gas and/or an inert gas to the wafer; a second supply pipeline which supplies a second reactant gas and/or an inert gas to the wafer; and a plasma generator which generates plasma between the wafer block and shower head are included.

Abstract: Provided is a thin film deposition reactor. The reactor includes a reactor block including a wafer block on which a wafer is mounted; a top lid for covering and sealing the reactor block; a showerhead disposed under the top lid and connected to an RF power supply unit, the showerhead having first nozzles and second nozzles that are not combined with each other; a showerhead isolation assembly having a plurality of gas curtain holes for forming a gas curtain around the wafer block, the showerhead isolation assembly for isolating the top lid from the showerhead; a top lid isolation flow line disposed on the top lid, the top lid isolation flow line having a first flow line and a second flow line that are connected to the first nozzles and the second nozzles, respectively, and are each bent at a right angle at least once.

Abstract: Provided is a reaction chamber for depositing a thin film. The reaction chamber includes a reactor block; a wafer block located inside the reactor block; a top plate that covers the reactor block to maintain a predetermined pressure; a feeding unit which supplies reactive gases to the reactor block; a shower head, which is installed in the top plate and includes a plurality of first spray holes for spraying the first reactive gas on a wafer and a plurality of second spray holes for spraying the second reactive gas; and an exhaust unit which expels gases from the reactor block. The feeding unit includes a feeding block; a distributing block; two or more first gas transfer pipes; and a second gas transfer pipe. The shower head includes an upper diffusion block, an intermediate diffusion block, and a lower diffusion block.

Abstract: Provided is a method of depositing a thin film using a hafnium compound. In this method, the depositing (S200) of a thin film includes (S20) depositing a primary thin film and (S21) depositing a secondary thin film. Step (S200) is performed by repeating steps (S20) and (S21) once or more. Step (S20) includes (S20-1) feeding a first reactive gas, (S20-2) purging the first reactive gas, (S20-3) feeding a third reactive gas, and (S20-4) purging the third reactive gas. Step (S21) includes (S21-1) feeding a second reactive gas, (S21-2) purging the second reactive gas, (S21-3) feeding the third reactive gas, and (S21-4) purging the third reactive gas. Step (S20) is performed by repeating steps (S20-1), (S20-2), (S20-3), and (S20-4) N times, and step (S21) is performed by repeating steps (S21-1), (S21-2), (S21-3), and (S21-4) M times.

Abstract: Provided is a method of depositing a thin film on a wafer using an aluminum compound. The method includes (S1) mounting the wafer on the wafer block; and (S2) depositing an Al2O3 thin film. Step (S2) includes (S2-1) feeding ozone by spraying ozone through the first spray holes and spraying an inert gas through the second spray holes; (S2-2) purging the ozone by stopping the spraying of the ozone, spraying the inert gas through the first spray holes, and spraying the same inert gas as in step (S2-1) through the second spray holes; (S2-3) feeding TMA by spraying the TMA, which is transferred by a carried gas, through the second spray holes and spraying the inert gas through the first spray holes; and (S2-4) purging the TMA by stopping the spraying of the TMA, spraying the same carrier gas as in step (S2-3) through the second spray holes, and spraying the same inert gas as in step (S2-3) through the first spray holes.