Abstract: A NAND flash memory device includes a plurality of continuous conductors disposed on a common level of a multilayer substrate, the plurality of continuous conductors including respective conductive lines extending in parallel along a first direction, respective contact pads disposed at ends of the respective conductive lines and respective conductive dummy lines extending in parallel from the contact pads along a second direction

Abstract: In accordance with the disclosure, in various door constructions, a projection of a door leaf is inserted in a hollow of a doorframe, height of the door leaf is minutely adjusted, and an interval between the door leaf and the doorframe is adjusted, which results in easy fastening of the door leaf and the doorframe and reduced construction time. In addition, the door leaf is completely fastened to the doorframe through the locking mechanism, the door leaf is prevented from being twisted in long use, thereby increasing its durability.

Abstract: Disclosed herein is a touch panel including: a transparent substrate; and a bezel part including a white layer formed at one-side edge of the transparent substrate and a light-shielding layer formed on the white layer, wherein the bezel part has a narrow width and a thin thickness, thereby implementing a display screen larger than that of the other touch panels having the same exterior size and providing the touch panel including the white-colored bezel part having a thin thickness and a uniform and sufficient color.

Abstract: There is provided a chip resistor including a ceramic substrate; a first resistance layer formed on the ceramic substrate and including a first conductive metal and a first glass; and a second resistance layer formed on the first resistance layer, including a second conductive metal and a second glass, and having a smaller content of glass than the first resistance layer, thereby obtaining relatively low resistance and a relatively small temperature coefficient of resistance (TCR).

Abstract: Disclosed herein is a touch panel including an electrode pattern configured of a combination of unit patterns in which a hole is formed at an intersection region between sides.

Abstract: Disclosed herein are a raw glass plate for manufacturing a touch panel and a method of manufacturing a touch panel using the raw glass plate. The raw glass plate includes a unit substrate region divided into an active region and a non-active region that is an edge portion of the active region; electrodes formed on the active region of the unit substrate region; wirings that are formed on the non-active region of the unit substrate region and are electrically connected to the electrodes; and a guard line that is formed outside a position at which the wirings are formed, on the non-active region of the unit substrate region in a longitudinal direction of the wirings.

Abstract: A NAND flash memory device includes a plurality of continuous conductors disposed on a common level of a multilayer substrate, the plurality of continuous conductors including respective conductive lines extending in parallel along a first direction, respective contact pads disposed at ends of the respective conductive lines and respective conductive dummy lines extending in parallel from the contact pads along a second direction.

Abstract: Disclosed herein is a touch panel including a transparent substrate and an electrode formed on the transparent substrate and an electrode having light transmittance of 5 to 50%, wherein as the electrode has high light transmittance, such that it is possible to solve a defective problem of visibility of the touch panel due to the opacity and specular phenomenon of the electrode.

Abstract: Disclosed herein is a touch panel including: a transparent substrate; conductive patterns formed on the transparent substrate such that wavy lines thereof are spaced apart from each other and arranged in parallel with each other, each of the wavy lines having a sine wave form where first peaks and second peaks alternately continue along a length direction thereof; and connecting patterns formed on the transparent substrate, each of the connecting patterns electrically connecting between the wave lines, so that good visibility can be achieved even though electrodes and wirings are disposed in an active area of the transparent substrate, by forming uniform pattern of electrodes and wirings on the transparent substrate.

Abstract: There are provided a piezoelectric resonator and an electrode structure thereof. The piezoelectric resonator includes: a piezoelectric body oscillated according to an electrical signal; and first and second electrodes each including first and second electrode layers stacked on respective both surfaces of the piezoelectric body, wherein the first electrode layer includes one or more selected from the group consisting of chromium (Cr), nickel (Ni), titanium (Ti), and an alloy including any one thereof, the ratio of the thickness of the first electrode layer to the thickness of the first or second electrode is 3% to 30%; and the second electrode layer includes copper (Cu) or an alloy including copper (Cu), and the ratio of the thickness of the second electrode layer to the thickness of the first or second electrode is 70% to 97%.

Abstract: There is provided a chip resistor including a ceramic substrate; a first resistance layer formed on the ceramic substrate and including a first conductive metal and a first glass; and a second resistance layer formed on the first resistance layer, including a second conductive metal and a second glass, and having a smaller content of glass than the first resistance layer, thereby obtaining relatively low resistance and a relatively small temperature coefficient of resistance (TCR).

Abstract: A NAND flash memory device includes a plurality of continuous conductors disposed on a common level of a multilayer substrate, the plurality of continuous conductors including respective conductive lines extending in parallel along a first direction, respective contact pads disposed at ends of the respective conductive lines and respective conductive dummy lines extending in parallel from the contact pads along a second direction

Abstract: According to the present invention, in various door constructions, a projection of a door leaf can be easily inserted in a hollow of a doorframe, height of the door leaf can be minutely adjusted, and an interval between the door leaf and the doorframe can be easily adjusted, which can result in easy fastening of the door leaf and the doorframe and reduced construction time. In addition, since the door leaf can be completely fastened to the doorframe through the locking mechanism, the door leaf can be prevented from being twisted in long use, thereby increasing its durability.

Abstract: A NAND flash memory device includes a plurality of continuous conductors disposed on a common level of a multilayer substrate, the plurality of continuous conductors including respective conductive lines extending in parallel along a first direction, respective contact pads disposed at ends of the respective conductive lines and respective conductive dummy lines extending in parallel from the contact pads along a second direction.

Abstract: The present invention provides an array type chip resistor including: a substrate having a plurality of grooves formed on both sides thereof at equal spaces; lower electrodes formed on both sides of a bottom surface of the substrate; upper electrodes formed on both sides of a top surface of the substrate; side electrodes electrically connected to the upper and lower electrodes; a resistive element interposed between lower electrodes of the bottom surface of the substrate; a protection layer covered on the resistive element, the protection layer having both sides which cover a part of the lower electrodes and the resistive element; leveling electrodes being in contact with the lower electrodes exposed to outside of the protection layer; and a plating layer formed on the leveling electrodes.

Abstract: There are provided an electrode structure of a piezoelectric resonator and a piezoelectric resonator including the same. The piezoelectric resonator includes: a piezoelectric plate vibrated by an electrical signal; and first and second electrodes having first to fourth layers stacked on both surfaces thereof, wherein the first and third layers are made of at least one selected from the group consisting of Ti, Ni, Cr, an alloy including Ti and an alloy including Cr and the second and fourth layers are made of Ag or an alloy including Ag.

Abstract: A NAND flash memory device includes a plurality of continuous conductors disposed on a common level of a multilayer substrate, the plurality of continuous conductors including respective conductive lines extending in parallel along a first direction, respective contact pads disposed at ends of the respective conductive lines and respective conductive dummy lines extending in parallel from the contact pads along a second direction.

Abstract: A NAND flash memory device includes a plurality of continuous conductors disposed on a common level of a multilayer substrate, the plurality of continuous conductors including respective conductive lines extending in parallel along a first direction, respective contact pads disposed at ends of the respective conductive lines and respective conductive dummy lines extending in parallel from the contact pads along a second direction

Abstract: The present invention provides an array type chip resistor including: a substrate formed in a rectangular parallelepiped shape; lower electrodes disposed on both sides of a bottom surface of the substrate at equal spaces; side electrodes extended from some of lower electrodes, formed on outermost edges of both sides of the substrate, in all lower electrodes, to a side surface of the substrate; a resistive element interposed between lower electrodes of the bottom surface of the substrate; a protection layer covered on the resistive element, the protection layer having both sides which cover a part of the lower electrodes and the resistive element; leveling electrodes being in contact with the lower electrodes exposed to outside of the protection layer; and a plating layer formed on the leveling electrodes.

Abstract: There are provided an electrode structure of a piezoelectric resonator and a piezoelectric resonator including the same. The piezoelectric resonator includes: a piezoelectric plate vibrated by an electrical signal; and first and second electrodes having first to fourth layers stacked on both surfaces thereof, wherein the first and third layers are made of at least one selected from the group consisting of Ti, Ni, Cr, an alloy including Ti and an alloy including Cr and the second and fourth layers are made of Ag or an alloy including Ag.