Patents by Inventor Jang Hyeon Seok

Jang Hyeon Seok has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Amino-silyl amine compound, method for preparing the same and silicon-containing thin-film using the same
    Patent number: 9586979
    Abstract: Provided are a novel amino-silyl amine compound, a method for preparing the same, and a silicon-containing thin-film using the same, wherein the amino-silyl amine compound has thermal stability and high volatility and is maintained in a liquid state at room temperature and under a pressure where handling is easy to thereby form a silicon-containing thin-film having high purity and excellent physical and electrical properties by various deposition methods.
    Type: Grant
    Filed: June 5, 2014
    Date of Patent: March 7, 2017
    Assignee: DNF CO., LTD.
    Inventors: Se Jin Jang, Sang-Do Lee, Sung Gi Kim, Byeong-il Yang, Jang Hyeon Seok, Sang Ick Lee, Myong Woon Kim
  • NOVEL TRISILYL AMINE DERIVATIVE, METHOD FOR PREPARING THE SAME AND SILICON-CONTAINING THIN FILM USING THE SAME
    Publication number: 20160333030
    Abstract: Provided are a novel trisilyl amine derivative, a method for preparing the same, and a silicon-containing thin film using the same, wherein the trisilyl amine derivative, which is a compound having thermal stability, high volatility, and high reactivity and being present in a liquid state at room temperature and under pressure where handling is possible, may form a high purity silicon-containing thin film having excellent physical and electrical properties by various deposition methods.
    Type: Application
    Filed: January 8, 2015
    Publication date: November 17, 2016
    Applicant: DNF CO., LTD.
    Inventors: Se Jin Jang, Sang-Do Lee, Jong Hyun Kim, Sung Gi Kim, Do Yeon Kim, Byeong-il Yang, Jang Hyeon Seok, Sang Ick Lee, Myong Woon Kim
  • NOVEL CYCLODISILAZANE DERIVATIVE, METHOD FOR PREPARING THE SAME AND SILICON-CONTAINING THIN FILM USING THE SAME
    Publication number: 20160326193
    Abstract: Provided are a novel cyclodisilazane derivative, a method for preparing the same, and a silicon-containing thin film using the same, wherein the cyclodisilazane derivative having thermal stability, high volatility, and high reactivity and being present in a liquid state at room temperature and under a pressure where handling is easy, may form a high purity silicon-containing thin film having excellent physical and electrical properties by various deposition methods.
    Type: Application
    Filed: January 8, 2015
    Publication date: November 10, 2016
    Inventors: Se Jin Jang, Byeong-il Yang, Sung Gi Kim, Jong Hyun Kim, Do Yeon Kim, Sang-Do Lee, Jang Hyeon Seok, Sang Ick Lee, Myong Woon Kim
  • NOVEL AMINO-SILYL AMINE COMPOUND, METHOD FOR PREPARING THE SAME AND SILICON-CONTAINING THIN-FILM USING THE SAME
    Publication number: 20160122369
    Abstract: Provided are a novel amino-silyl amine compound, a method for preparing the same, and a silicon-containing thin-film using the same, wherein the amino-silyl amine compound has thermal stability and high volatility and is maintained in a liquid state at room temperature and under a pressure where handling is easy to thereby form a silicon-containing thin-film having high purity and excellent physical and electrical properties by various deposition methods.
    Type: Application
    Filed: June 5, 2014
    Publication date: May 5, 2016
    Inventors: Se Jin JANG, Sang-Do LEE, Sung Gi KIM, Byeong-il YANG, Jang Hyeon SEOK, Sang Ick LEE, Myong Woon KIM
  • Amino-silyl amine compound, method for preparing the same and silicon-containing thin-film using the same
    Patent number: 9245740
    Abstract: Provided are a novel amino-silyl amine compound, a method for preparing the same, and a silicon-containing thin-film using the same, wherein the amino-silyl amine compound has thermal stability and high volatility and is maintained in a liquid state at room temperature and under a pressure where handling is easy to thereby form a silicon-containing thin-film having high purity and excellent physical and electrical properties by various deposition methods.
    Type: Grant
    Filed: June 4, 2014
    Date of Patent: January 26, 2016
    Assignee: DNF Co., Ltd.
    Inventors: Se Jin Jang, Sang Do Lee, Sung Gi Kim, Jong Hyun Kim, Byeong Il Yang, Jang Hyeon Seok, Sang Ick Lee, Myong Woon Kim
  • Novel Amino-Silyl Amine Compound, Method for Preparing the Same and Silicon-Containing Thin-Film Using the Same
    Publication number: 20140363985
    Abstract: Provided are a novel amino-silyl amine compound, a method for preparing the same, and a silicon-containing thin-film using the same, wherein the amino-silyl amine compound has thermal stability and high volatility and is maintained in a liquid state at room temperature and under a pressure where handling is easy to thereby form a silicon-containing thin-film having high purity and excellent physical and electrical properties by various deposition methods.
    Type: Application
    Filed: June 4, 2014
    Publication date: December 11, 2014
    Inventors: Se Jin Jang, Sang Do Lee, Sung Gi Kim, Jong Hyun Kim, Byeong IL Yang, Jang Hyeon Seok, Sang Ick Lee, Myong Woon Kim
  • Semiconductor Device and Method of Fabricating the Same
    Publication number: 20090166874
    Abstract: A semiconductor device and manufacturing method thereof are provided. The semiconductor device can include an interlayer dielectric layer on a substrate, a metal layer on the interlayer dielectric layer, and an impure anti-reflection film on the metal layer. The impure anti-reflection film can be formed through an in situ process.
    Type: Application
    Filed: November 14, 2008
    Publication date: July 2, 2009
    Inventor: Jang Hyeon Seok
  • Semiconductor Device and Method of Fabricating the Same
    Publication number: 20090166878
    Abstract: Disclosed are a semiconductor device and a method of fabricating the same. The semiconductor device includes an interlayer dielectric film on a substrate, a plug in the interlayer dielectric film, a metal layer on the plug, and an impure anti-reflective coating (ARC) layer on the metal layer.
    Type: Application
    Filed: December 18, 2008
    Publication date: July 2, 2009
    Inventor: Jang Hyeon SEOK