Patents by Inventor Jangkwon LIM

Jangkwon LIM has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Termination structures with reduced dynamic output capacitance loss
    Patent number: 11817478
    Abstract: In a general aspect, a semiconductor device can include a substrate of a first conductivity type, an active region disposed in the substrate, and a termination region disposed in the substrate adjacent to the active region. The termination region can include a junction termination extension (JTE) of a second conductivity type, where the second conductivity type is opposite the first conductivity type. The JTE can have a first depletion stopper region disposed in an upper portion of the JTE, a second depletion stopper region disposed in a lower portion of the JTE, and a high carrier mobility region disposed between the first depletion stopper region and the second depletion stopper region.
    Type: Grant
    Filed: December 23, 2020
    Date of Patent: November 14, 2023
    Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Jaume Roig-Guitart, Fredrik Allerstam, Thomas Neyer, Andrei Konstantinov, Martin Domeij, Jangkwon Lim
  • TERMINATION STRUCTURES WITH REDUCED DYNAMIC OUTPUT CAPACITANCE LOSS
    Publication number: 20220199764
    Abstract: In a general aspect, a semiconductor device can include a substrate of a first conductivity type, an active region disposed in the substrate, and a termination region disposed in the substrate adjacent to the active region. The termination region can include a junction termination extension (JTE) of a second conductivity type, where the second conductivity type is opposite the first conductivity type. The JTE can have a first depletion stopper region disposed in an upper portion of the JTE, a second depletion stopper region disposed in a lower portion of the JTE, and a high carrier mobility region disposed between the first depletion stopper region and the second depletion stopper region.
    Type: Application
    Filed: December 23, 2020
    Publication date: June 23, 2022
    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Jaume ROIG-GUITART, Fredrik ALLERSTAM, Thomas NEYER, Andrei KONSTANTINOV, Martin DOMEIJ, Jangkwon LIM