Abstract: Vapor deposition methods for depositing transition metal dichalcogenide (TMDC) films, such as rhenium sulfide thin films, are provided. In some embodiments TMDC thin films are deposited using a deposition cycle in which a substrate in a reaction space is alternately and sequentially contacted with a vapor phase transition metal precursor, such as a transition metal halide, a reactant comprising a reducing agent, such as NH3 and a chalcogenide precursor. In some embodiments rhenium sulfide thin films are deposited using a vapor phase rhenium halide precursor, a reducing agent and a sulfur precursor. The deposited TMDC films can be etched by chemical vapor etching using an oxidant such as O2 as the etching reactant and an inert gas such as N2 to remove excess etching reactant. The TMDC thin films may find use, for example, as 2D materials.

Abstract: Vapor deposition methods for depositing transition metal dichalcogenide (TMDC) films, such as rhenium sulfide thin films, are provided. In some embodiments TMDC thin films are deposited using a deposition cycle in which a substrate in a reaction space is alternately and sequentially contacted with a vapor phase transition metal precursor, such as a transition metal halide, a reactant comprising a reducing agent, such as NH3 and a chalcogenide precursor. In some embodiments rhenium sulfide thin films are deposited using a vapor phase rhenium halide precursor, a reducing agent and a sulfur precursor. The deposited TMDC films can be etched by chemical vapor etching using an oxidant such as O2 as the etching reactant and an inert gas such as N2 to remove excess etching reactant. The TMDC thin films may find use, for example, as 2D materials.

Abstract: Vapor deposition methods for depositing transition metal dichalcogenide (TMDC) films, such as rhenium sulfide thin films, are provided. In some embodiments TMDC thin films are deposited using a deposition cycle in which a substrate in a reaction space is alternately and sequentially contacted with a vapor phase transition metal precursor, such as a transition metal halide, a reactant comprising a reducing agent, such as NH3 and a chalcogenide precursor. In some embodiments rhenium sulfide thin films are deposited using a vapor phase rhenium halide precursor, a reducing agent and a sulfur precursor. The deposited TMDC films can be etched by chemical vapor etching using an oxidant such as O2 as the etching reactant and an inert gas such as N2 to remove excess etching reactant. The TMDC thin films may find use, for example, as 2D materials.

Abstract: A vapor deposition process for forming a thin film on a substrate in a reaction chamber where the process includes contacting the substrate with a fluoride precursor. The process results in the formation of a lithium fluoride thin film.

Abstract: A vapor deposition process for forming a thin film on a substrate in a reaction chamber where the process includes contacting the substrate with a fluoride precursor. The process results in the formation of a lithium fluoride thin film.

Abstract: A vapor deposition process for forming a thin film on a substrate in a reaction chamber where the process includes contacting the substrate with a fluoride precursor. The process results in the formation of a lithium fluoride thin film.

Abstract: A vapor deposition process for forming a thin film on a substrate in a reaction chamber where the process includes contacting the substrate with a fluoride precursor. The process results in the formation of a lithium fluoride thin film.

Abstract: Noble metal films can be deposited by atomic layer deposition (ALD)-type processes. In preferred embodiments, Ir, Pd, and Pt are deposited by alternately and sequentially contacting a substrate with vapor phase pulses of a noble metal precursor, an oxygen source, and a hydrogen source. The oxygen source is preferably a reactive oxygen species. Preferably the deposition temperature is less than about 200° C. Preferably, pulses of the hydrogen source are less than 10 seconds.

Abstract: A user recognition system that utilizes two CCD cameras to obtain two images of the user from two different angles of view. A three-dimensional model of the user's face is created from the obtained images in addition. The generated model and an additional facial texture image of the user are compared with a stored user profile. When the obtained 3D model and facial texture information matches the stored profile of the user, access is granted to the system.

Abstract: A user recognition system that utilizes two CCD cameras to obtain two images of the user from two different angles of view. A three-dimensional model of the user's face is created from the obtained images in addition. The generated model and an additional facial texture image of the user are compared with a stored user profile. When the obtained 3D model and facial texture information matches the stored profile of the user, access is granted to the system.