Abstract: Detection, diagnosis, and monitoring of Alzheimer's disease can be achieved with antibody-based detection methods directed to detect at least two regions of the amyloid beta peptide. The invention recognizes and relies on the observation that the steric availability of the carboxyl terminal epitope and the amino terminal epitope in an amyloid beta peptide differs based on whether the amyloid beta is monomeric or oligomeric. Due to oligomerization, the measured concentration of carboxyl termini that are available for binding represents the amount of monomeric amyloid beta in the sample; whereas the measured concentration of amino termini that are available for binding represents total amyloid beta (i.e., monomeric plus oligomeric) in the sample. Comparing the relative binding therefore can be used to characterize the population of soluble amyloid beta oligomers in the sample. The measurements are useful for early detection and subsequent monitoring of the development of Alzheimer's disease in a patient.

Abstract: Memristors and their fabrication are provided. A first dielectric layer is formed over one or more conductive pathways. Vias are formed in the dielectric layer and filled with conductive material. A second dielectric layer is formed there over, and vias are formed aligned with and extending to the filled vias. A reactant fluid is introduced into the vias such that a reacted portion of the conductive material is defined within the filled vias. The vias in the second dielectric layer are then filled with conductive material such that memristors are defined. Conductive pathways are then formed over and in contact with the memristors such that each is individually addressable.

Abstract: Memristors and their fabrication are provided. A first dielectric layer is formed over one or more conductive pathways. Vias are formed in the dielectric layer and filled with conductive material. A second dielectric layer is formed there over, and vias are formed aligned with and extending to the filled vias. A reactant fluid is introduced into the vias such that a reacted portion of the conductive material is defined within the filled vias. The vias in the second dielectric layer are then filled with conductive material such that memristors are defined. Conductive pathways are then formed over and in contact with the memristors such that each is individually addressable.

Abstract: In a method for dispensing a material into a drug delivery device, a transdermal drug delivery device having reservoirs is provided, in which the reservoirs are in fluid communication with microneedles configured for insertion into a user's skin. Instructions to deposit first and second materials are received and a first set of reservoirs to receive the first material and a second set of reservoirs to receive the second material are selected. In addition, the first material is deposited into the first set of reservoirs and the second material is deposited into the second set of reservoirs through operation of a material dispensing device.

Abstract: A transdermal drug delivery device includes a cassette and a lid that is attachable to the cassette. The cassette includes a first reservoir for containing a drug and microneedles. At least one of the microneedles is in fluid communication with the first reservoir. The lid includes a power source and an electronic device configured to receive electrical energy generated from the power source. The drug delivery device also includes a logic device configured to selectively control delivery of the electrical energy to the electronic device, whereby delivery of the electrical energy causes the electronic device to deliver the drug contained in the first reservoir.

Abstract: An information storage device is provided. The information storage device may be a magnetic random access memory (MRAM) device including a resistive cross point array of spin dependent tunneling (SDT) junctions or magnetic memory elements, with word lines extending along rows of the SDT junctions and bit lines extending along the columns of the SDT junctions. The present design includes a plurality of heating elements connected in series with associated magnetic memory elements, each heating element comprising a diode. Voltage applied to a magnetic memory element and associated heating element causes reverse current to flow through the diode, thereby producing heat from the diode and heating the magnetic memory element, thereby facilitating the write function of the device.

Abstract: This invention provides a multilayer pinned reference layer for a magnetic device. In a particular embodiment a magnetic tunnel junction cell is provided. Each magnetic memory tunnel junction cell provides at least one ferromagnetic data or sense layer, an intermediate layer in contact with the data layer, and a multilayer pinned ferromagnetic reference layer. The multilayer pinned reference layer is in contact with the intermediate layer, opposite from the data layer. The multilayer pinned reference layer is characterized by at least one first layer of ferromagnetic material and at least one second layer of ferromagnetic material in physical contact with the first layer and magnetically coupled to the first layer. The first and second layer self seed to provide a <111> crystal texture used in establishing the pinning magnetic field of the reference layer.

Abstract: A smart drug delivery system is disclosed. The system includes a sensor component, an analytical component coupled to the sensor component and a drug delivery component coupled to the analytical component for delivering a drug to a host.

Abstract: An information storage device is provided. The information storage device may be a magnetic random access memory (MRAM) device including a resistive cross point array of spin dependent tunneling (SDT) junctions or magnetic memory elements, with word lines extending along rows of the SDT junctions and bit lines extending along the columns of the SDT junctions. The present design includes a plurality of heating elements connected in series with associated magnetic memory elements, each heating element comprising a diode. Voltage applied to a magnetic memory element and associated heating element causes reverse current to flow through the diode, thereby producing heat from the diode and heating the magnetic memory element, thereby facilitating the write function of the device.

Abstract: A method of fabricating a polarizing layer using a gas cluster ion beam apparatus (GCIB) is disclosed. The method includes generating a metal-organic gas that includes a metal-organic compound. The metal-organic compound includes a polarizing material, such as iron Fe, Co, or CoFe, for example. The metal-organic gas and a carrier gas are combined to form a composite gas that is supplied to the GCIB. The GCIB processes the composite gas to form a beam of gas cluster ions that include the polarizing material. The beam irradiates an interface surface of a layer of material and at least a portion of the polarizing material remains in contact with the interface surface to form the polarizing layer on the interface surface.

Abstract: A method of fabricating a diffusion barrier using a gas cluster ion beam apparatus is disclosed. The method includes generating a metal-organic gas that includes a metal-organic compound that includes an element of cobalt (Co) or cobalt and iron (CoFe). The metal-organic gas is combined with a carrier gas that is supplied to the gas cluster ion beam apparatus (GCIB). The GCIB processes the carrier gas to form a beam of gas cluster ions that include the metal-organic compound. The beam irradiates an interface surface of a target material (e.g. an IrMn, PtMn, or MnFe antiferromagnetic layer) and at least a portion of the Co or CoFe remains in contact with the interface surface to form a barrier that prevents a diffusion of manganese (Mn).

Abstract: An exemplary array of thermally-assisted magnetic memory structures includes a plurality of magnetic memory elements, each magnetic memory element being near a diode. A diode near a selected magnetic memory element can be heated by absorbing energy from a radio frequency electromagnetic field. The heated diode can be used to elevate the temperature of the selected magnetic memory element to thermally assist in switching the magnetic state of the magnetic memory element upon application of a write current.

Abstract: An exemplary magnetic random access memory comprises a plurality of hardmasks, a plurality of magnetic memory elements each having been formed using a corresponding one of the hardmasks, and at least one conductor near the hardmasks. The conductor is capable of carrying a current to generate radio frequency electromagnetic fields absorbable by the hardmasks to heat the hardmasks to elevate the temperature of one or more of the magnetic memory elements to thermally assist in switching a magnetic orientation thereof.

Abstract: A resistive cross point array memory device comprising a plurality of word lines extending in a row direction, a plurality of bit lines extending in a column direction such that a plurality of cross points is formed at intersections between the word and bit lines, and at least one memory element formed in at least one of the cross points. The memory element comprises a first tunnel junction having a bottom conductor, a top conductor, a barrier layer adjacent the bottom conductor, and wherein the bottom conductor comprises a non-uniform upper surface.

Abstract: A separation operation for particles includes loading particles of various sizes and responsive to electromagnetic forces into a starting position upon a separation collection component, sending a first current through a first set of conductors in a first direction drawing a subset of larger particles toward a first adjacent position to the starting position and sending successively lower currents compared to the first current through a second set of conductors in the first direction drawing a subset of smaller particles toward a second adjacent position to the starting position. A collection operation includes sending a lower current through a first set of conductors near a subset of smaller particles that forces the smaller particles into a first particle collection point and sending a higher current through the second set of conductors to collect a subset of larger particles into a second particle collection point.

Abstract: A method of engineering a property of an interface using a gas cluster ion beam (GCIB) apparatus is disclosed. The method includes introducing a metal-organic compound with a carrier gas to form a metal-organic gas and mixing the metal-organic gas with a cluster gas used in the GCIB. The GCIB forms a plurality of gas cluster ions that include the metal-organic compound, focuses the gas cluster ions into a beam, and then accelerates the beam towards an interface surface of a target material where the gas cluster ions impact on the interface surface and at least a portion of the metal-organic compound remain in contact with the interface surface and modifies a property of the interface surface. The metal-organic gas can include a plurality of metal-organic compounds.

Abstract: An aspect of the present invention is a thin film device. The thin film device includes at least one patterned thin film layer, a thermally conductive material coupled to at least one of the patterned thin-film layer and an electrically and thermally isolating material in contact with the thermally conductive material.

Abstract: A data storage device includes a phase-change storage layer and an array of nanotubes as electron sources.

Abstract: A magnetic memory cell includes a first magneto-resistive device and a second magneto-resistive device. The first magneto-resistive device has a first sense layer. The second magneto-resistive device is connected in series with the first magneto-resistive device. The second magneto-resistive device has a second sense layer. At least one controlled nucleation site is placed on at least one of the first sense layer and the second sense layer.

Abstract: A thin film device and a method of providing thermal assistance therein is disclosed. Accordingly, a heater material is utilized to thermally assist in the operation of the thin film device. By utilizing a heater material to thermally assist in the operation of the thin film device, a substantial improvement in the accuracy and performance of the thin film device is achieved. A first aspect of the present invention is a thin film device. The thin film device includes at least one patterned thin film layer, a heater material coupled to the at least one patterned thin film layer for providing thermal assistance to the at least one of the patterned thin film layers and a conductor coupled to the heater material for supplying energy to the heater material.