Abstract: An apparatus for measuring plasma density of a plasma processing reactor, comprises a probe having a dielectric tube with a coaxial cable inserted therein. The coaxial cable has an open antenna tip, distance constancy is kept between the antenna tip and the dielectric tube despite varying thermal conditions. The probe can be utilized to determine resonant plasma frequency near its tip location and the corresponding plasma density.

Abstract: A method and apparatus for maintaining a plasma in a plasma region, by supplying RF power at a fundamental frequency to the plasma region together with a gas in order to create an RF electromagnetic field which interacts with the gas to create a plasma that contains electromagnetic energy components at frequencies that are harmonics of the fundamental frequency. The energy components at frequencies that are harmonics of the fundamental frequency are monitored and controlled by placing a harmonic multiplexer containing a matching network and RF filter elements in energy receiving communication with the plasma.

Abstract: A method and apparatus for maintaining a plasma in a plasma region, by supplying RF power at a fundamental frequency to the plasma region together with a gas in order to create an RF electromagnetic field which interacts with the gas to create a plasma that contains electromagnetic energy components at frequencies that are harmonics of the fundamental frequency. The energy components at frequencies that are harmonics of the fundamental frequency are monitored and controlled by placing a harmonic multiplexer containing a matching network and RF filter elements in energy receiving communication with the plasma.

Abstract: An improved apparatus for material processing, wherein the improved apparatus including a plasma processing system to process a substrate, the plasma processing system including a process chamber, a substrate holder, and a plasma source. The plasma source further includes an inductive coil assembly for inductively coupling RF power to plasma wherein the inductive coil assembly is arranged within a process chamber. The inductive coil assembly includes an inner conductor, a slotted outer conductor, and a dielectric layer. The inductive coil assembly can further include a second dielectric layer in order to protect the slotted outer conductor from plasma. The inner conductor is surrounded by the slotted outer conductor and, between which, resides the first dielectric layer. The second dielectric layer encapsulates the inner conductor, first dielectric layer and the slotted outer conductor.