Abstract: A check valve comprises a valve housing defining a valve opening; and a flapper element. The flapper element has a proximal end, and is pivotally mounted to the valve housing adjacent the periphery of the valve opening at its proximal end for pivotal movement between a closed position, in which it blocks the flow of fluid through the valve opening and a fully open position in which it permits the flow of fluid through the valve opening. At least one spring damping element is located between the flapper element and the valve housing for providing a damping force resisting the pivotal movement of the flapper element towards its open position. The at least one spring damping element being operable to produce a damping force only over a final range of the pivotal movement of the flapper element as it approaches its fully open position.

Abstract: A check valve comprises a valve housing defining a valve opening; and a flapper element. The flapper element has a proximal end, and is pivotally mounted to the valve housing adjacent the periphery of the valve opening at its proximal end for pivotal movement between a closed position, in which it blocks the flow of fluid through the valve opening and a fully open position in which it permits the flow of fluid through the valve opening. At least one spring damping element is located between the flapper element and the valve housing for providing a damping force resisting the pivotal movement of the flapper element towards its open position. The at least one spring damping element being operable to produce a damping force only over a final range of the pivotal movement of the flapper element as it approaches its fully open position.

Abstract: A graphene base transistor comprises on a semiconductor substrate surface an emitter pillar and an emitter-contact pillar, which extend from a pillar foundation in a vertical direction. A dielectric filling layer laterally embeds the emitter pillar and the emitter-contact pillar above the pillar foundation. The dielectric filling layer has an upper surface that is flush with a top surface of the emitter pillar and with the at least one base-contact arm of a base-contact structure. A graphene base forms a contiguous layer between a top surface of the emitter pillar and a top surface of the base-contact arm. A collector stack and the base have the same lateral extension parallel to the substrate surface and perpendicular to those edges of the top surface of the emitter pillar and the base-contact arm that face each other.

Abstract: A bleed assembly includes a bleed valve disposed across a bleed duct. The bleed valve includes a valve housing, a shaft connecting an actuator assembly to a flow control member, and a servo tube. The actuator assembly includes a linear actuator disposed perpendicular to a valve centerline, so that linear motion of the actuator is transverse to a valve centerline. The member is in the main fluid passage, rotatable between a fully closed position defined by leading and trailing edges abutting one or more housing walls, and a fully open position defined by the leading edge at the upstream side and the trailing edge at the downstream side of the main flow passage. A first portion of a servo tube extends into the main passage from a distance P1 upstream of the member in a fully closed position, and angular distance A1 of at least 10° from the TDC position.

Abstract: A graphene base transistor comprises on a semiconductor substrate surface an emitter pillar and an emitter-contact pillar, which extend from a pillar foundation in a vertical direction. A dielectric filling layer laterally embeds the emitter pillar and the emitter-contact pillar above the pillar foundation. The dielectric filling layer has an upper surface that is flush with a top surface of the emitter pillar and with the at least one base-contact arm of a base-contact structure. A graphene base forms a contiguous layer between a top surface of the emitter pillar and a top surface of the base-contact arm. A collector stack and the base have the same lateral extension parallel to the substrate surface and perpendicular to those edges of the top surface of the emitter pillar and the base-contact arm that face each other.

Abstract: A junction transistor, comprising, on a substrate an emitter layer, a collector layer, and a base layer that comprises a graphene layer, wherein an emitter barrier layer is arranged between the base layer and the emitter layer, and a collector barrier layer is arranged between the base and the collector layers and adjacent to the graphene layer, characterized in that the collector barrier layer is a compositionally graded material layer, which has an electron affinity that decreases in a direction pointing from the base layer to the collector layer.

Abstract: A hot hole transistor with a graphene base comprises on a substrate an emitter layer, a collector layer, and a base layer that comprises a graphene layer, wherein an emitter barrier layer is arranged between the base layer and the emitter layer, and a collector barrier layer is arranged between the base and the collector layers and adjacent to the graphene layer.

Abstract: A method for fabricating an electronic component, comprising providing a substrate; and depositing a graphene layer; wherein the substrate is either provided with a van-der-Waals functional layer or a van-der-Waals functional layer is deposited on the substrate before depositing the graphene layer; a surface step contour is formed; and growth of the graphene layer is seeded at the step contour.

Abstract: A hot hole transistor with a graphene base comprises on a substrate an emitter layer, a collector layer, and a base layer that comprises a graphene layer, wherein an emitter barrier layer is arranged between the base layer and the emitter layer, and a collector barrier layer is arranged between the base and the collector layers and adjacent to the graphene layer.

Abstract: A junction transistor, comprising, on a substrate an emitter layer, a collector layer, and a base layer that comprises a graphene layer, wherein an emitter barrier layer is arranged between the base layer and the emitter layer, and a collector barrier layer is arranged between the base and the collector layers and adjacent to the graphene layer, characterized in that the collector barrier layer is a compositionally graded material layer, which has an electron affinity that decreases in a direction pointing from the base layer to the collector layer.

Abstract: A method for fabricating an electronic component, comprising providing a substrate; and depositing a graphene layer; wherein the substrate is either provided with a van-der-Waals functional layer or a van-der-Waals functional layer is deposited on the substrate before depositing the graphene layer; a surface step contour is formed; and growth of the graphene layer is seeded at the step contour.

Abstract: A device for automatic feeding liquid fuel (2) to a furnace with comprising a power system for igniting, extinguishing, and monitoring the level of liquid fuel (2) in the furnace (1), said power system comprising a main power switch (9), a control circuit (3), a sensor of liquid fuel level (25), a fuel quality sensor (12), a first degree safety sensor (16), an additional safety sensor (15), a protective circuit (17), a supply circuit (18) and a spark generator (26); and said power system being remote-controlled; a fuel system for feeding liquid fuel (2) from a removable fuel tank (24) to the furnace (1) via a fuel pipe (13) and a solenoid valve (14); and an air system for generating of pressure to supply liquid fuel (2) to the furnace (1) comprising a power air pump (28).