Abstract: A dispensing nozzle method and apparatus is provided that may help in reducing the number of defects in integrated circuits during the manufacturing process. In one embodiment, the nozzle is configured such that at least a portion of the end of the nozzle that dispenses fluid can increase and decrease with a change in pressure, which may help to control fluid drips when the nozzle is not dispensing.

Abstract: A dispensing nozzle method and apparatus is provided that may help in reducing the number of defects in integrated circuits during the manufacturing process. In one embodiment, the nozzle is configured such that at least a portion of the end of the nozzle that dispenses fluid can increase and decrease with a change in pressure, which may help to control fluid drips when the nozzle is not dispensing.

Abstract: A tungsten gate electrode and method of fabricating the same are provided. In one aspect, a method of fabricating a gate electrode stack on a substrate is provided that includes forming an insulating film on the substrate and forming a conductor film on the insulating film by initially depositing a film of amorphous silicon and amorphous tungsten, and thereafter depositing a film of polycrystalline tungsten on the film and annealing the substrate to react the amorphous silicon with the amorphous tungsten to form tungsten silicide on the insulating film and to increase the grain structure of the polycrystalline tungsten film. The tungsten silicide film and the polycrystalline tungsten film are patterned to define the gate electrode stack. The method enables the seamless fabrication of an adhesion layer and a tungsten gate in a single chamber and without resort to titanium.