Patents by Inventor Jason D. Fabbri

Jason D. Fabbri has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8569941
    Abstract: Provided are electron emitters based upon diamondoid monolayers, preferably self-assembled higher diamondoid monolayers. High intensity electron emission has been demonstrated employing such diamondoid monolayers, particularly when the monolayers are comprised of higher diamondoids. The application of such diamondoid monolayers can alter the band structure of substrates, as well as emit monochromatic electrons, and the high intensity electron emissions can also greatly improve the efficiency of field-effect electron emitters as applied to industrial and commercial applications.
    Type: Grant
    Filed: April 9, 2012
    Date of Patent: October 29, 2013
    Assignees: The Board of Trustees of the Leland Stanford Junior University, The Regents of the University of California
    Inventors: Wanli Yang, Jason D. Fabbri, Nicholas A. Melosh, Zahid Hussain, Zhi-Xun Shen
  • Publication number: 20120212153
    Abstract: Provided are electron emitters based upon diamondoid monolayers, preferably self-assembled higher diamondoid monolayers. High intensity electron emission has been demonstrated employing such diamondoid monolayers, particularly when the monolayers are comprised of higher diamondoids. The application of such diamondoid monolayers can alter the band structure of substrates, as well as emit monochromatic electrons, and the high intensity electron emissions can also greatly improve the efficiency of field-effect electron emitters as applied to industrial and commercial applications.
    Type: Application
    Filed: April 9, 2012
    Publication date: August 23, 2012
    Applicants: The Regents of the University of California, The Board of Trustees of the Leland Stanford Junior University
    Inventors: Wanli YANG, Jason D. Fabbri, Nicholas A. Melosh, Zahid Hussain, Zhi-Xun Shen
  • Patent number: 8154185
    Abstract: Provided are electron emitters based upon diamondoid monolayers, preferably self-assembled higher diamondoid monolayers. High intensity electron emission has been demonstrated employing such diamondoid monolayers, particularly when the monolayers are comprised of higher diamondoids. The application of such diamondoid monolayers can alter the band structure of substrates, as well as emit monochromatic electrons, and the high intensity electron emissions can also greatly improve the efficiency of field-effect electron emitters as applied to industrial and commercial applications.
    Type: Grant
    Filed: February 12, 2007
    Date of Patent: April 10, 2012
    Assignees: The Board of Trustees of the Leland Stanford Junior University, The Regents of the University of California
    Inventors: Wanli Yang, Jason D. Fabbri, Nicholas A. Melosh, Zahid Hussain, Zhi-Xun Shen
  • Publication number: 20080191598
    Abstract: Provided are electron emitters based upon diamondoid monolayers, preferably self-assembled higher diamondoid monolayers. High intensity electron emission has been demonstrated employing such diamondoid monolayers, particularly when the monolayers are comprised of higher diamondoids. The application of such diamondoid monolayers can alter the band structure of substrates, as well as emit monochromatic electrons, and the high intensity electron emissions can also greatly improve the efficiency of field-effect electron emitters as applied to industrial and commercial applications.
    Type: Application
    Filed: February 12, 2007
    Publication date: August 14, 2008
    Applicants: The Board of Trustees of the Leland Stanford Junior University, The Regents of the University of California
    Inventors: Wanli Yang, Jason D. Fabbri, Nicholas A. Melosh, Zahid Hussain, Zhi-Xun Shen