Abstract: A thermoelectric device with multiple headers and a method of manufacturing such a device are provided herein. In some embodiments, a thermoelectric device includes multiple thermoelectric legs, a cold header thermally attached to the thermoelectric legs, and a hot header thermally attached to the thermoelectric legs opposite the cold header. At least one of the cold header and the hot header includes at least one score line. According to some embodiments disclosed herein, this the thermal stress on the thermoelectric device can be greatly reduced or relieved by splitting the header into multiple pieces or by scoring the header by a depth X. This enables the use of larger thermoelectric devices and/or thermoelectric devices with an increased lifespan.

Abstract: A thermoelectric heat pump cascade and a method of manufacturing such are disclosed herein. In some embodiments, a thermoelectric heat pump cascade includes a first stage plurality of thermoelectric devices attached to a first stage circuit board and a first stage thermal interface material between the thermoelectric devices and the heat spreading lid over the thermoelectric devices. The thermoelectric heat pump cascade component also includes a second stage plurality of thermoelectric devices attached to a second stage circuit board where the second stage plurality of thermoelectric devices has a greater heat pumping capacity than the first stage plurality of thermoelectric devices, and a second stage thermal interface material between the second stage plurality of thermoelectric devices and the first stage plurality of thermoelectric devices.

Abstract: A thermoelectric device with multiple headers and a method of manufacturing such a device are provided herein. In some embodiments, a thermoelectric device includes multiple thermoelectric legs, a cold header thermally attached to the thermoelectric legs, and a hot header thermally attached to the thermoelectric legs opposite the cold header. At least one of the cold header and the hot header includes at least one score line. According to some embodiments disclosed herein, this the thermal stress on the thermoelectric device can be greatly reduced or relieved by splitting the header into multiple pieces or by scoring the header by a depth X. This enables the use of larger thermoelectric devices and/or thermoelectric devices with an increased lifespan.

Abstract: Embodiments of a low resistivity ohmic contact are disclosed. In some embodiments, a method of fabricating a low resistivity ohmic contact includes providing a semiconductor material layer and intentionally roughening the semiconductor material layer to create a characteristic surface roughness. The method also includes providing an ohmic contact metal layer on a surface of the semiconductor material layer and providing a diffusion barrier metal layer on a surface of the ohmic contact metal layer opposite the semiconductor material layer. In this way, the adhesive force between the semiconductor material layer and the ohmic contact metal layer may be increased.

Abstract: Embodiments of a low resistivity ohmic contact are disclosed. In some embodiments, a method of fabricating a low resistivity ohmic contact includes providing a semiconductor material layer and intentionally roughening the semiconductor material layer to create a characteristic surface roughness. The method also includes providing an ohmic contact metal layer on a surface of the semiconductor material layer and providing a diffusion barrier metal layer on a surface of the ohmic contact metal layer opposite the semiconductor material layer. In this way, the adhesive force between the semiconductor material layer and the ohmic contact metal layer may be increased.

Abstract: Embodiments of a low resistivity contact to a semiconductor structure are disclosed. In one embodiment, a semiconductor structure includes a semiconductor layer, a semiconductor contact layer having a low bandgap on a surface of the semiconductor layer, and an electrode on a surface of the semiconductor contact layer opposite the semiconductor layer. The bandgap of the semiconductor contact layer is in a range of and including 0 to 0.2 electron-volts (eV), more preferably in a range of and including 0 to 0.1 eV, even more preferably in a range of and including 0 to 0.05 eV. Preferably, the semiconductor layer is p-type. In one particular embodiment, the semiconductor contact layer and the electrode form an ohmic contact to the p-type semiconductor layer and, as a result of the low bandgap of the semiconductor contact layer, the ohmic contact has a resistivity that is less than 1×10?6 ohms·cm2.

Abstract: Embodiments of a low resistivity contact to a semiconductor structure are disclosed. In one embodiment, a semiconductor structure includes a semiconductor layer, a semiconductor contact layer having a low bandgap on a surface of the semiconductor layer, and an electrode on a surface of the semiconductor contact layer opposite the semiconductor layer. The bandgap of the semiconductor contact layer is in a range of and including 0 to 0.2 electron-volts (eV), more preferably in a range of and including 0 to 0.1 eV, even more preferably in a range of and including 0 to 0.05 eV. Preferably, the semiconductor layer is p-type. In one particular embodiment, the semiconductor contact layer and the electrode form an ohmic contact to the p-type semiconductor layer and, as a result of the low bandgap of the semiconductor contact layer, the ohmic contact has a resistivity that is less than 1×10?6 ohms·cm2.

Abstract: An apparatus and method of fabricating and operating a micro-electromechanical systems (MEMS) integrated optical structure is disclosed. Micro-optics is integrated with MEMS actuators to provide a building block for a micro-optical communication device. Such micro-optical communication device may realize a variety of optical communication systems including optical interconnects, laser communications, or fiber optic switches. In accordance with one aspect of the present invention, a micro-optical element such as a micro-lens is advantageously integrated with an actuator such as MEMS comb drive actuator to form a MEMS lens assembly. The MEMS lens assembly is further coupled to an optical source which may provide a MEMS integrated micro-optical communication device. This integration substantially obviates the generally needed external or manual positioning of the micro-optical element to align a light beam or an optical signal being emitted from the optical source.

Abstract: An apparatus and method for a micro-electromechanical systems (MEMS) actuator such as a MEMS two-dimensional electrostatic comb drive having springs being advantageously configured to provide relatively large movements in first and second directions. In one embodiment, a comb drive apparatus includes a first set of comb pairs; a second set of comb pairs coupled to the first set of comb pairs; a stage coupled to the first and second sets of comb pairs; a first plurality of springs interposed between the second set of comb pairs and the stage and between the second set of comb pairs and the first set of comb pairs for movably coupling the second set of comb pairs to the stage and to the first set of comb pairs; and a second plurality of springs interposed between the first set of comb pairs and the stage and between the first set of comb pairs and the second set of comb pairs for movably coupling the first set of comb pairs to the stage and to the second set of comb pairs.

Abstract: An electronic device, such as a filter or phase shifter, for example, includes a substrate, and a MEMS capacitor on the substrate and having a plurality of selectable capacitance values. The MEMS capacitor preferably includes a lower capacitor electrode on the substrate, and a movable bridge including end portions connected to the substrate laterally adjacent the lower capacitor electrode. The movable bridge may also include a conductive medial portion between the end portions defining an upper capacitor electrode suspended above the lower capacitor electrode and being movable between an upper position and a lower position by an electrostatic force generated between the capacitor electrodes. The upper and lower positions provide respective low and high selectable capacitance values.

Abstract: An apparatus and method of fabricating and operating a micro-electromechanical systems (MEMS) integrated optical structure is disclosed. Micro-optics is integrated with MEMS actuators to provide a building block for a micro-optical communication device. Such micro-optical communication device may realize a variety of optical communication systems including optical interconnects, laser communications, or fiber optic switches. In accordance with one aspect of the present invention, a micro-optical element such as a micro-lens is advantageously integrated with an actuator such as MEMS comb drive actuator to form a MEMS lens assembly. The MEMS lens assembly is further coupled to an optical source which may provide a MEMS integrated micro-optical communication device. This integration substantially obviates the generally needed external or manual positioning of the micro-optical element to align a light beam or an optical signal being emitted from the optical source.