Abstract: Exemplary embodiments provide microfluidic devices and methods for their use. The microfluidic device can include an array of M×N reaction sites formed by intersecting a first and second plurality of fluid channels of a flow layer. The flow layer can have a matrix design and/or a blind channel design to analyze a large number of samples under a limited number of conditions. The microfluidic device can also include a control layer including a valve system for regulating solution flow through fluid channels. In addition, by aligning the control layer with the fluid channels, the detection of the microfluidic devices, e.g., optical signal collection, can be improved by piping lights to/from the reaction sites. In an exemplary embodiment, guard channels can be included in the microfluidic device for thermal cycling and/or reducing evaporation from the reaction sites.

Abstract: Exemplary embodiments provide microfludic devices and methods for their use. The microfluidic device can include an array of M×N reaction sites formed by intersecting a first and second plurality of fluid channels of a flow layer. The flow layer can have a matrix design and/or a blind channel design to analyze a large number of samples under a limited number of conditions. The microfluidic device can also include a control layer including a valve system for regulating solution flow through fluid channels. In addition, by aligning the control layer with the fluid channels, the detection of the microfluidic devices, e.g., optical signal collection, can be improved by piping lights to/from the reaction sites. In an exemplary embodiment, guard channels can be included in the microfluidic device for thermal cycling and/or reducing evaporation from the reaction sites.

Abstract: A heating apparatus comprising a support base and a microplate having a first surface and an opposing second surface. The microplate is positioned adjacent the support base and comprises a plurality of wells formed in the first surface thereof. Each of the plurality of wells is sized to receive an assay therein. A sapphire crystalline transparent window is positioned adjacent the microplate opposing the support base. A heating device heats the transparent window in response to a control system.

Abstract: A deposition system includes a process chamber for conducting an ALD process to deposit layers on a substrate. An electrostatic chuck (ESC) retains the substrate. A backside gas increases thermal coupling between the substrate and the ESC. The ESC is cooled via a coolant flowing through a coolant plate and heated via a resistive heater. Various arrangements are disclosed.

Abstract: A deposition system in accordance with one embodiment of the present invention includes a process chamber, a stationary pedestal for supporting a substrate in the process chamber, and a moveable shield forming at least a portion of an enclosure defining the process chamber. Motion of the shield with respect to the stationary pedestal controls a variable gas conductance path for gases flowing through the process chamber thereby modulating the pressure of the process chamber with respect to an external volume. The moveable shield in accordance with an embodiment of the present invention may include several gas channel openings for introducing various process gases into the process chamber. In some embodiments, the moveable shield may alternatively or additionally include an interior cooling or heating channel for temperature control.

Abstract: A deposition system includes a process chamber for conducting an ALD process to deposit layers on a substrate. In one embodiment, instead of varying the gas flux on a substrate in the chamber by controlling the flow of gas upstream of the process chamber, the gas flux on the substrate is controlled by controlling the conductance between the process chamber and a lower pressure volume outside the process chamber. The flux of the gas on the substrate varies inversely with the chamber conductance, such that the flux of the gas on the substrate increases when the conductance decreases. Various methods of performing an ALD process by controlling the conductance are disclosed as well as various structures for controlling the conductance.

Abstract: A deposition system in accordance with one embodiment of the present invention includes a process chamber, a stationary pedestal for supporting a substrate in the process chamber, and a moveable shield forming at least a portion of an enclosure defining the process chamber. Motion of the shield with respect to the stationary pedestal controls a variable gas conductance path for gases flowing through the process chamber thereby modulating the pressure of the process chamber with respect to an external volume. The moveable shield in accordance with an embodiment of the present invention may include several gas channel openings for introducing various process gases into the process chamber. In some embodiments, the moveable shield may alternatively or additionally include an interior cooling or heating channel for temperature control.

Abstract: A method for conducting an ALD process to deposit layers on a substrate which includes an electrostatic chuck (ESC) to retain the substrate. Electrode(s) in the chuck assembly are used to induce a voltage on the substrate to promote precursor adsorption on the substrate.

Abstract: A bubbler for gaseous delivery comprises a receptacle for containing a liquid, a gas inlet conduit, and a gas outlet conduit. The gas inlet conduit includes a first end for receiving a carrier gas and a second end terminating in the receptacle for bubbling the carrier gas into the liquid. The gas outlet conduit includes a first portion, a second portion, and a third portion. The first portion includes an opening located within the receptacle but above the liquid. The opening has a first cross-sectional area. The second portion has a second cross-sectional area larger than the first cross-sectional area. The third portion has a third cross-sectional area smaller than the second cross sectional area. The second portion causes a burp of the liquid entering the opening to not enter the third portion as gas is bubbled through the liquid.

Abstract: A process chamber for conducting an atomic layer deposition (ALD) process employs an electrostatic chuck (ESC) to retain the substrate. RF power is coupled to electrodes in the process chamber to generate ions and reactive atoms for depositing layers on the substrate.

Abstract: A deposition system includes a process chamber for conducting an ALD process to deposit layers on a substrate. Multiple valves are arranged and controlled to selectively introduce process gases into the chamber.

Abstract: A process chamber for conducting an ALD process to deposit layers on a substrate includes an electrostatic chuck (ESC) to retain the substrate. Electrodes in the chuck assembly are biased so as to create a DC bias on the substrate to attract charged gas ions in the chamber to the substrate. Improved chemisorption results.

Abstract: A deposition system includes a process chamber for conducting an ALD process to deposit layers on a substrate. An electrostatic chuck (ESC) retains the substrate. A backside gas increases thermal coupling between the substrate and the ESC. The ESC is cooled via a coolant flowing through a coolant plate and heated via a resistive heater. Various arrangements are disclosed.

Abstract: An atomic layer deposition (ALD) process is based upon the sequential supply of at least two separate reactants into a process chamber. A first reactant reacts (becomes adsorbed) with the surface of the substrate via chemisorption. The first reactant gas is removed from the chamber, and a second reactant gas reacts with the adsorbed reactant to form a monolayer of the desired film. The process is repeated to form a layer of any thickness. To reduce the process time, there is no separate purge gas used to purge the first reactant gas from the chamber prior to introducing the second gas, containing the second reactant. Instead, the purge gas also includes the second reactant. Thus, there can be very little or no delay between introducing the first and second gases. In one embodiment, a plasma of the second gas is created using an RF source, which forms energized ions and reactive atoms to drive the reaction at low temperatures.

Abstract: A deposition system in accordance with one embodiment of the present invention includes a process chamber, a stationary pedestal for supporting a substrate in the process chamber, and a moveable shield forming at least a portion of an enclosure defining the process chamber. Motion of the shield with respect to the stationary pedestal controls a variable gas conductance path for gases flowing through the process chamber thereby modulating the pressure of the process chamber with respect to an external volume. The moveable shield in accordance with an embodiment of the present invention may include several gas channel openings for introducing various process gases into the process chamber. In some embodiments, the moveable shield may alternatively or additionally include an interior cooling or heating channel for temperature control.

Abstract: A deposition system includes a process chamber for conducting an ALD process to deposit layers on a substrate. In one embodiment, instead of varying the gas flux on a substrate in the chamber by controlling the flow of gas upstream of the process chamber, the gas flux on the substrate is controlled by controlling the conductance between the process chamber and a lower pressure volume outside the process chamber. The flux of the gas on the substrate varies inversely with the chamber conductance, such that the flux of the gas on the substrate increases when the conductance decreases. Various methods of performing an ALD process by controlling the conductance are disclosed as well as various structures for controlling the conductance.

Abstract: A process chamber containing a substrate has at least one process gas introduced for reacting with a surface of the substrate to form a layer on the substrate. The gas creates a certain pressure in the chamber. At a certain time, the gas is expelled to end the reaction, and the gas pressure is reduced. The detection of the change in pressure in said chamber automatically controls valves to supply a second gas into the chamber to further react with the surface of the substrate.