Abstract: A dielectric deposition tool for forming a silicon dioxide layer on a wafer with a TEOS showerhead which delivers a flow rate per unit area from an edge band of the showerhead that is at least twice a flow rate per unit area from a central region of the showerhead. The edge band extends at least one half inch from an outer edge of the showerhead up to one fourth of the diameter of the wafer. A process of forming an integrated circuit by forming a silicon dioxide layer on a wafer containing the integrated circuit using the dielectric deposition tool. The silicon dioxide layer is thicker under the edge band than under the central region. A subsequent CMP operation reduces the thickness difference between the wafer outer annulus and the wafer core by at least half. The silicon dioxide layer has a compressive stress between 125 and 225 MPa.

Abstract: A dielectric deposition tool for forming a silicon dioxide layer on a wafer with a TEOS showerhead which delivers a flow rate per unit area from an edge band of the showerhead that is at least twice a flow rate per unit area from a central region of the showerhead. The edge band extends at least one half inch from an outer edge of the showerhead up to one fourth of the diameter of the wafer. A process of forming an integrated circuit by forming a silicon dioxide layer on a wafer containing the integrated circuit using the dielectric deposition tool. The silicon dioxide layer is thicker under the edge band than under the central region. A subsequent CMP operation reduces the thickness difference between the wafer outer annulus and the wafer core by at least half. The silicon dioxide layer has a compressive stress between 125 and 225 MPa.

Abstract: A method and apparatus for aligning a CVD showerhead, comprising engaging a showerhead stem clamp with a showerhead stem outside of a process chamber of the CVD system. An alignment fixture is provided, and a plurality of spacer discs are positioned between the showerhead suspended from a top plate of the CVD system and heated platen. Nuts supporting the showerhead to the top plate are loosened, therein permitting the showerhead to move vertically within the process chamber. The process chamber is closed and the top plate is lowered, wherein the showerhead contacts the plurality of spacer discs. The alignment fixture is engaged with the showerhead stem clamp, therein fixing a vertical position of the showerhead with respect to the top plate, and the top plate is raised. The position of the of the showerhead is then fixed with respect to the top plate via a plurality of standoffs, an adjustment bracket, a threaded rod, and a plurality of nuts.

Abstract: A method and apparatus for aligning a CVD showerhead, comprising engaging a showerhead stem clamp with a showerhead stem outside of a process chamber of the CVD system. An alignment fixture is provided, and a plurality of spacer discs are positioned between the showerhead suspended from a top plate of the CVD system and heated platen. Nuts supporting the showerhead to the top plate are loosened, therein permitting the showerhead to move vertically within the process chamber. The process chamber is closed and the top plate is lowered, wherein the showerhead contacts the plurality of spacer discs. The alignment fixture is engaged with the showerhead stem clamp, therein fixing a vertical position of the showerhead with respect to the top plate, and the top plate is raised. The position of the of the showerhead is then fixed with respect to the top plate via a plurality of standoffs, an adjustment bracket, a threaded rod, and a plurality of nuts.