Patents by Inventor Jason Pitters
Jason Pitters has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11955172Abstract: An atomic orbital based memory storage is provided that includes a plurality of surface atoms forming dangling bonds (DBs) and a subset of the plurality of surface atoms passivated with spatial control to form covalent bonds with hydrogen, deuterium, or a combination thereof. The atomic orbital based data storage that can be rewritten and corrected as needed. The resulting data storage is also archival and capable of high data densities than any known storage as the data is retained in a binary storage or a given orbital being passivated or a dangling bond (DB). A method of forming and reading the atomic orbital data storage is also provided. The method including selectively removing covalent bonds to form dangling bonds (DBs) extending from a surface atom by hydrogen lithography and imaging the covalent bonds spatially to read the atomic orbital data storage.Type: GrantFiled: November 28, 2022Date of Patent: April 9, 2024Assignees: National Research Council of Canada, Quantum Silicon Inc., The Governors of the University of AlbertaInventors: Roshan Achal, Robert A. Wolkow, Jason Pitters, Martin Cloutier, Mohammad Rashidi, Marco Taucer, Taleana Huff
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Patent number: 11749558Abstract: A method for treating a wafer is provided with a portion of a semiconductor layer is selectively removed from the wafer so as to create an inactive region of the wafer surrounding a first active region of the wafer. The inactive region of the wafer has an exposed portion of an insulator layer, but none of the semiconductor layer. The first active region of the wafer includes a first portion of the semiconductor layer and a first portion of the insulator layer. At least one conductor is formed in contact with the first portion of the semiconductor layer, such that the conductor and the first portion of the semiconductor layer form a portion of an electrical circuit. The first active region of the wafer is selectively treated to remove a native oxide layer from the first portion of the semiconductor layer. A resulting wafer is also disclosed.Type: GrantFiled: December 13, 2021Date of Patent: September 5, 2023Assignees: Quantum Silicon Inc., The Governors of the University of Alberta, National Research Council of CanadaInventors: Bruno Vieira Da Cunha Martins, Robert A. Wolkow, Marco Taucer, Jason Pitters
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Patent number: 11635450Abstract: A method for the patterning and control of single electrons on a surface is provided that includes implementing scanning tunneling microscopy hydrogen lithography with a scanning probe microscope to form charge structures with one or more confined charges; performing a series of field-free atomic force microscopy measurements on the charge structures with different tip heights, where interaction between the tip and the confined charge are elucidated; and adjusting tip heights to controllably position charges within the structures to write a given charge state. The present disclose also provides a Gibb's distribution machine formed with the method for the patterning and control of single electrons on a surface. A multi bit true random number generator and neural network learning hardware formed with the above described method are also provided.Type: GrantFiled: June 29, 2021Date of Patent: April 25, 2023Assignees: Quantum Silicon inc., National Research Council of CanadaInventors: Robert Wolkow, Mohammad Rashidi, Wyatt Vine, Thomas Dienel, Lucian Livadaru, Taleana Huff, Jacob Retallick, Konrad Walus, Jason Pitters, Roshan Achal
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Publication number: 20230093537Abstract: An atomic orbital based memory storage is provided that includes a plurality of surface atoms forming dangling bonds (DBs) and a subset of the plurality of surface atoms passivated with spatial control to form covalent bonds with hydrogen, deuterium, or a combination thereof. The atomic orbital based data storage that can be rewritten and corrected as needed. The resulting data storage is also archival and capable of high data densities than any known storage as the data is retained in a binary storage or a given orbital being passivated or a dangling bond (DB). A method of forming and reading the atomic orbital data storage is also provided. The method including selectively removing covalent bonds to form dangling bonds (DBs) extending from a surface atom by hydrogen lithography and imaging the covalent bonds spatially to read the atomic orbital data storage.Type: ApplicationFiled: November 28, 2022Publication date: March 23, 2023Applicants: National Research Council of Canada, Quantum Silicon Inc., The Governors of the University of AlbertaInventors: Roshan Achal, Robert A. Wolkow, Jason Pitters, Martin Cloutier, Mohammad Rashidi, Marco Taucer, Taleana Huff
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Patent number: 11557337Abstract: An atomic orbital based memory storage is provided that includes a plurality of surface atoms forming dangling bonds (DBs) and a subset of the plurality of surface atoms passivated with spatial control to form covalent bonds with hydrogen, deuterium, or a combination thereof. The atomic orbital based data storage that can be rewritten and corrected as needed. The resulting data storage is also archival and capable of high data densities than any known storage as the data is retained in a binary storage or a given orbital being passivated or a dangling bond (DB). A method of forming and reading the atomic orbital data storage is also provided. The method including selectively removing covalent bonds to form dangling bonds (DBs) extending from a surface atom by hydrogen lithography and imaging the covalent bonds spatially to read the atomic orbital data storage.Type: GrantFiled: June 19, 2019Date of Patent: January 17, 2023Assignees: National Research Council of Canada, Quantum Silicon Inc., The Governors of the University of AlbertaInventors: Roshan Achal, Robert A. Wolkow, Jason Pitters, Martin Cloutier, Mohammad Rashidi, Marco Taucer, Taleana Huff
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Publication number: 20220299544Abstract: A nano-positioning system for fine and coarse nano-positioning including at least one actuator, wherein the at least one actuator includes a high Curie temperature material and wherein the nano-positioning system is configured to apply a voltage to the at least one actuator to generate fine and/or coarse motion by the at least one actuator. The nano-positioning system being a stand-alone system, a scanning probe microscope, or an attachment to an existing microscope configured to perform a method of creepless nano-positioning that includes positioning a probe relative to a first area of a substrate using coarse stepping and interacting with the first area of the substrate using fine motion after less than 60 seconds of the positioning the probe. The movement of the scanning probe microscope is actuated by a high Curie temperature piezoelectric material that limits and/or eliminates creep, hysteresis and aging.Type: ApplicationFiled: August 31, 2020Publication date: September 22, 2022Applicants: National Research Council of Canada, The Governors of the University of AlbertaInventors: Robert A. Wolkow, Jason Pitters, Mark Salomons
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Publication number: 20220102197Abstract: A method for treating a wafer is provided with a portion of a semiconductor layer is selectively removed from the wafer so as to create an inactive region of the wafer surrounding a first active region of the wafer. The inactive region of the wafer has an exposed portion of an insulator layer, but none of the semiconductor layer. The first active region of the wafer includes a first portion of the semiconductor layer and a first portion of the insulator layer. At least one conductor is formed in contact with the first portion of the semiconductor layer, such that the conductor and the first portion of the semiconductor layer form a portion of an electrical circuit. The first active region of the wafer is selectively treated to remove a native oxide layer from the first portion of the semiconductor layer. A resulting wafer is also disclosed.Type: ApplicationFiled: December 13, 2021Publication date: March 31, 2022Applicants: Quantum Silicon Inc., The Governors of the University of Alberta, National Research Council of CanadaInventors: Bruno Vieira Da Cunha Martins, Robert A. Wolkow, Marco Taucer, Jason Pitters
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Patent number: 11232976Abstract: A method for treating a wafer is provided with a portion of a semiconductor layer is selectively removed from the wafer so as to create an inactive region of the wafer surrounding a first active region of the wafer. The inactive region of the wafer has an exposed portion of an insulator layer, but none of the semiconductor layer. The first active region of the wafer includes a first portion of the semiconductor layer and a first portion of the insulator layer. At least one conductor is formed in contact with the first portion of the semiconductor layer, such that the conductor and the first portion of the semiconductor layer form a portion of an electrical circuit. The first active region of the wafer is selectively treated to remove a native oxide layer from the first portion of the semiconductor layer. A resulting wafer is also disclosed.Type: GrantFiled: June 29, 2018Date of Patent: January 25, 2022Assignees: National Research Council of Canada, The Governors of the University of Alberta, Quantum Silicon Inc.Inventors: Bruno Vieira Da Cunha Martins, Robert A. Wolkow, Marco Taucer, Jason Pitters
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Publication number: 20210325429Abstract: A method for the patterning and control of single electrons on a surface is provided that includes implementing scanning tunneling microscopy hydrogen lithography with a scanning probe microscope to form charge structures with one or more confined charges; performing a series of field-free atomic force microscopy measurements on the charge structures with different tip heights, where interaction between the tip and the confined charge are elucidated; and adjusting tip heights to controllably position charges within the structures to write a given charge state. The present disclose also provides a Gibb's distribution machine formed with the method for the patterning and control of single electrons on a surface. A multi bit true random number generator and neural network learning hardware formed with the above described method are also provided.Type: ApplicationFiled: June 29, 2021Publication date: October 21, 2021Applicants: Quantum Silicon Inc., National Research Council of Canada, The University of British ColumbiaInventors: Robert Wolkow, Mohammad Rashidi, Wyatt Vine, Thomas Dienel, Lucian Livadaru, Taleana Huff, Jacob Retallick, Konrad Walus, Jason Pitters, Roshan Achal
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Publication number: 20210272625Abstract: An atomic orbital based memory storage is provided that includes a plurality of surface atoms forming dangling bonds (DBs) and a subset of the plurality of surface atoms passivated with spatial control to form covalent bonds with hydrogen, deuterium, or a combination thereof. The atomic orbital based data storage that can be rewritten and corrected as needed. The resulting data storage is also archival and capable of high data densities than any known storage as the data is retained in a binary storage or a given orbital being passivated or a dangling bond (DB). A method of forming and reading the atomic orbital data storage is also provided. The method including selectively removing covalent bonds to form dangling bonds (DBs) extending from a surface atom by hydrogen lithography and imaging the covalent bonds spatially to read the atomic orbital data storage.Type: ApplicationFiled: June 19, 2019Publication date: September 2, 2021Applicants: National Research Council of Canada, Quantum Silicon Inc., The Governors of the University of AlbertaInventors: Roshan Achal, Robert A. Wolkow, Jason Pitters, Martin Cloutier, Mohammad Rashidi, Marco Taucer, Taleana Huff
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Publication number: 20210159116Abstract: A method for treating a wafer is provided with a portion of a semiconductor layer is selectively removed from the wafer so as to create an inactive region of the wafer surrounding a first active region of the wafer. The inactive region of the wafer has an exposed portion of an insulator layer, but none of the semiconductor layer. The first active region of the wafer includes a first portion of the semiconductor layer and a first portion of the insulator layer. At least one conductor is formed in contact with the first portion of the semiconductor layer, such that the conductor and the first portion of the semiconductor layer form a portion of an electrical circuit. The first active region of the wafer is selectively treated to remove a native oxide layer from the first portion of the semiconductor layer. A resulting wafer is also disclosed.Type: ApplicationFiled: June 29, 2018Publication date: May 27, 2021Applicants: Quantum Silicon Inc., The Governors of the University of Alberta, National Research Council of CanadaInventors: Bruno Vieira Da Cunha Martins, Robert A. Wolkow, Marco Taucer, Jason Pitters
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Patent number: 7431856Abstract: A method of fabricating nano-tips involves placing a precursor nanotip with an apex and shank in a vacuum chamber; optionally applying an electric field to the precursor nanotip to remove oxide and other contaminant species; subsequently admitting an etchant gas to the vacuum chamber to perform field assisted etching by preferential adsorption of the etchant gas on the shank; and gradually reducing the applied electric field to confine the adsorption of the etchant gas to the shank as etching progresses.Type: GrantFiled: May 17, 2006Date of Patent: October 7, 2008Assignees: National Research Council of Canada, The Governors of the University of AlbertaInventors: Mohamed Rezeq, Jason Pitters, Robert Wolkow
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Publication number: 20070025907Abstract: A method of fabricating nano-tips involves placing a precursor nanotip with an apex and shank in a vacuum chamber; optionally applying an electric field to the precursor nanotip to remove oxide and other contaminant species; subsequently admitting an etchant gas to the vacuum chamber to perform field assisted etching by preferential adsorption of the etchant gas on the shank; and gradually reducing the applied electric field to confine the adsorption of the etchant gas to the shank as etching progresses.Type: ApplicationFiled: May 17, 2006Publication date: February 1, 2007Applicant: NATIONAL RESEARCH COUNCIL OF CANADA AND UNIVERSITY OF ALBERTAInventors: Mohamed Rezeq, Jason Pitters, Robert Wolkow