Patents by Inventor Jason R. Trost

Jason R. Trost has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6367493
    Abstract: The invention provides a pair of parallel megasonic transducers that generate parallel columns of megasonic waves across a cleaning container. Semiconductor wafers move back and forth transverse to the columns. The transducers have their back side potted with a silicone elastomer to prevent corrosion. In another embodiment megasonic waves from in-line transducers are dispersed with a cylindrical quartz rod. Water is enriched with ozone by pumping ozone under pressure through a filter into sealed housing of deionized water.
    Type: Grant
    Filed: April 10, 2001
    Date of Patent: April 9, 2002
    Assignee: Fairchild Semiconductor Corporation
    Inventors: Malcolm R. Schuler, Robert F. Longenberger, Rodney S. Ridley, Thomas E. Grebs, Jason R. Trost, Raymond J. Webb, Michael A. Caravaggio, Terry L. Fenstermacher
  • Publication number: 20020038662
    Abstract: The invention provides a pair of parallel megasonic transducers that generate parallel columns of megasonic waves across a cleaning container. Semiconductor wafers move back and forth transverse to the columns. The transducers have their back side potted with a silicone elastomer to prevent corrosion. In another embodiment megasonic waves from in-line transducers are dispersed with a cylindrical quartz rod. Water is enriched with ozone by pumping ozone under pressure through a filter into sealed housing of deionized water.
    Type: Application
    Filed: December 6, 2001
    Publication date: April 4, 2002
    Applicant: INTERSIL CORPORATION
    Inventors: Malcolm R. Schuler, Robert F. Longenberger, Rodney S. Ridley, Thomas E. Grebs, Jason R. Trost, Raymond J. Webb, Michael A. Caravaggio, Terry L. Fenstermacher
  • Publication number: 20010041461
    Abstract: A process for forming a junction termination extension (JTE) oxide having reduced total oxide charge and SiO2—Si interface trap density parameters uses precursor densified thin oxide layers, to improve the quality of subsequently formed thicker oxide layers, and multiple anneals to remove implant damage and set geometry parameters. After formation of a first dual oxide layer, and a post-oxidation anneal, the oxide is patterned and JTE regions are implanted. Implant-based near surface crystalline damage is annealed out in a non-oxidizing ambient, and JTE dopants are partially driven into adjoining material of the substrate. A thin dense bulk precursor oxide layer is grown on the exposed JTE dopant-implanted surface portions of the substrate, followed by forming the bulk of the JTE oxide in a steam or wet oxygen atmosphere. The substrate is then annealed in a non-oxidizing ambient, to cause a further drive-in of the JTE dopants. The associated reduction in Qox and Dit improves high voltage edge stability.
    Type: Application
    Filed: October 6, 1998
    Publication date: November 15, 2001
    Inventors: RODNEY S. RIDLEY, JASON R. TROST, RAYMOND J. WEBB
  • Patent number: 6314974
    Abstract: The invention provides a pair of parallel megasonic transducers that generate parallel columns of megasonic waves across a cleaning container. Semiconductor wafers move back and forth transverse to the columns. The transducers have their back side potted with a silicone elastomer to prevent corrosion. In another embodiment megasonic waves from in-line transducers are dispersed with a cylindrical quartz rod. Water is enriched with ozone by pumping ozone under pressure through a filter into sealed housing of deionized water.
    Type: Grant
    Filed: June 28, 1999
    Date of Patent: November 13, 2001
    Assignee: Fairchild Semiconductor Corporation
    Inventors: Malcolm R. Schuler, Robert F. Longenberger, Rodney S. Ridley, Thomas E. Grebs, Jason R. Trost, Raymond J. Webb, Michael A. Caravaggio, Terry L. Fenstermacher
  • Patent number: 6309952
    Abstract: A process for forming a junction termination extension (JTE) oxide having reduced total oxide charge and SiO2—Si interface trap density parameters uses precursor densified thin oxide layers to improve the quality of subsequently formed thicker oxide layers, and multiple anneals to remove implant damage and set geometry parameters. After formation of a first dual oxide layer, and a post-oxidation anneal, the oxide is patterned and JTE regions are implanted. Implant-based near surface crystalline damage is annealed out in a non-oxidizing ambient, and JTE dopants are partially driven into adjoining material of the substrate. A thin dense bulk precursor oxide layer is grown on the exposed JTE dopant-implanted surface portions of the substrate, followed by forming the bulk of the JTE oxide in a steam or wet oxygen atmosphere. The substrate is then annealed in a non-oxidizing ambient, to cause a further drive-in of the JTE dopants. The associated reduction in Qox and Dit improves high voltage edge stability.
    Type: Grant
    Filed: October 6, 1998
    Date of Patent: October 30, 2001
    Assignee: Fairchild Semiconductor Corporation
    Inventors: Rodney S. Ridley, Jason R. Trost, Raymond J. Webb
  • Publication number: 20010015211
    Abstract: The invention provides a pair of parallel megasonic transducers that generate parallel columns of megasonic waves across a cleaning container. Semiconductor wafers move back and forth transverse to the columnns. The transducers have their back side potted with a silicone elastomer to prevent corrosion. In another embodiment megasonic waves from in-line transducers are dispersed with a cylindrical quartz rod. Water is enriched with ozone by pumping ozone under pressure through a filter into sealed housing of deionized water.
    Type: Application
    Filed: April 10, 2001
    Publication date: August 23, 2001
    Applicant: INTERSIL CORPORATION
    Inventors: Malcolm R. Schuler, Robert F. Longenberger, Rodney S. Ridley, Thomas E. Grebs, Jason R. Trost, Raymond J. Webb, Michael A. Caravaggio, Terry L. Fenstermacher