Abstract: A ITO layer structure, which is composed of the ITO as the outermost layer and the first anti-reflected layer on the specific side of the transparent substrate, furthermore, the second anti-reflected layer is formed on the opposite side of substrate, can improve the total transmittance.

Abstract: A ITO layer structure, which is composed of the ITO as the outermost layer and the first anti-reflected layer on the specific side of the transparent substrate, furthermore, the second anti-reflected layer is formed on the opposite side of substrate, can improve the total transmittance.

Abstract: A two-stage manufacturing process for preparation of an ITO layer includes having first a transparent substrate, e.g., a glass or plastic substrate going through treatment without preheating; the substrate is then sputtering processed in a sputtering chamber under process conditions without heating up to form a amorphous state ITO film on the surface of the transparent substrate; followed with a thermal treatment at a preset temperature to turn the ITO layer into a crystalline state without compromising strength of the glass or the plastic substrate while delivering a durable ITO layer and a structure of ITO layer provided with a specific sheet resistance and/or thickness. The ITO layer produced using the present invention particularly fits to be applied in a touch screen structure.

Abstract: A method for producing an ITO transparent substrate with a high resistance at a low-temperature sputtering process is provided for mass production. The method is characterized by: a film of ITO mixed with metallic-oxide target and coated with multiple layers provides a transparent capacity. The film can be produced via a production line and further heated and annealed for stabilizing the high resistance thereof.

Abstract: A manufacturing method for sputtering an anti-refection layer onto a board at low temperature has the merits of easily being implemented and easily mass-produced. The manufacturing method is used for sputtering multiple anti-refection layers onto a board. The method can be used for mass-producing anti-reflection panels as the raw material for the photo industry. The method is superior to the manufacturing method for producing nebulization anti-reflection panels. This invention utilizes the anti-reflection characteristics of the board structure that is sputtered and stacked alternatively with high index refraction layers and low index refraction layers. A continuous manufacturing process is adopted. The present invention uses plasma to clean the surface of the boards and adopts a traditional sputtering machine. Therefore, it is convenient for installing and mass-producing high quality material.

Abstract: A dipping process for a long-term anti-smudge coating is disclosed. The dipping process includes the steps of: fixing a plurality of polarizers onto a dipping frame; moving a solution tank of a dipping apparatus upwardly to the dipping frame for passively dipping the polarizers in the solution tank with long-term anti-smudge solutions; moving the solution tank down for passively separating the polarizers from the solution tank; coating the long-term anti-smudge solutions comprising medicinal solutes and solvents on the polarizers to form a solution films; and processing the solution films by fixing the polarizers onto a fixing board under a constant temperature and constant humidity.

Abstract: A method for sputtering a multilayer film on a sheet workpiece at a low temperature of the present invention has the following steps: employing plasma to clean a surface of a sheet workpiece, sputtering at least one metal oxide or semiconductor oxide on the sheet workpiece, and sputtering at least one ITO transparent electric layer on the sheet workpiece. The film sputtering process of the sheet workpiece employs continuously connecting work stations, thereby controlling delay time between the work stations of the sheet workpiece within a given range. The sheet workpiece is made from a macromolecular material.

Abstract: A method for sputtering a multilayer film on a sheet workpiece at a low temperature of the present invention has the following steps: employing plasma to modify a surface of a sheet workpiece, providing a reciprocating sputtering process to deposit metal oxide layers or semiconductor oxide layers on the sheet workpiece, preheating the sheet workpiece and providing a reciprocating ITO sputtering process to sputter ITO transparent conductive layers on the sheet workpiece. The film sputtering process of the sheet workpiece employs continuously connecting work line and controls delay time between the sputtering units to deposit a film with a predetermined thickness on the sheet workpiece.

Abstract: An anti-reflection coating layer system is composed of 4 oxide layers. The material of surface layer is a transparent conductive coating and has a high refractive index between 1.9 to 2.1. The materials used for the surface layer are a transparent conductive coating such as SnO2, ZnO2, In2O3, and ITO.

Abstract: An anti-reflection layer system is composed of 5 layers of oxide materials and the materials of the outermost layer has a high-refractive index between 1.9 to 2.1. The materials of outermost layer are a kind of transparent conductive coating such as SnO2, ZnO2, In2O3 and ITO. Because of the surface layer has a good electrical conductive property, the layer system reduce much of work of grounding process and also increase the total yield in the volume production. The present invention provided a surface conductive layer structure of anti-reflection coating, which can be applied not only on display industry but also on touch sensor industry for glass and plastic substrate.

Abstract: An anti-reflection layer system is composed of 5 layers of oxide materials and the materials of the outermost layer has a high-refractive index between 1.9 to 2.1. The materials of outermost layer are a kind of transparent conductive coating such as SnO2, ZnO2, In2O3 and ITO. Because of the surface layer has a good electrical conductive property, the layer system reduce much of work of grounding process and also increase the total yield in the volume production. The present invention provided a surface conductive layer structure of anti-reflection coating, which can be applied not only on display industry but also on touch sensor industry for glass and plastic substrate.

Abstract: An anti-reflection coating layer system is composed of 4 oxide layer and more specifically the material of surface layer is a transparent conductive coating and has a high refractive index between 1.9 to 2.1. The materials of surface layer are a kind of transparent conductive coating such as SnO2, ZnO2, In2O3 and ITO. Because of the surface layer has a good electrical conductive property, the layer system reduce much of work of grounding process and also increase the total yield in the volume production.

Abstract: A combination process of vacuum sputtering and wet coating produces a high conductivity and light attenuation anti-reflection coating on a substrate of a CRT surface. The coating includes five layers by vacuum sputtering and one layer on top of the coating by conventional wet process. The layers produced by vacuum sputtering provides high anti-reflection, low resistivity, and light-attenuation effect. The layer produced by wet process provides fingerprint proof effect.

Abstract: An anti-reflection with high conductivity and transmission controlled multi-layer coating for Flat CRT products is provided which includes five layers coating by vacuum sputtering and one layer coating by conventional wet process. The first layer is formed by an oxide material. The second layer is arranged on an underlying first layer and is formed by a metal. The third layer is arranged on an underlying second layer and is coated by vacuum sputtering. The third layer provides high conductivity thin film with resistance as low as 102 &OHgr;/square. The fourth layer is arranged on an underlying third layer and is formed by an oxide material. The fifth layer is formed by an oxide material. The fourth layer and fifth layer are coated by vacuum sputtering. The sixth layer is deposited on the top surface and is formed by a wet silica coating process.

Abstract: An anti-reflection with high conductivity and transmission controlled multi-layer coating for Flat CRT products is provided which includes five layers coating by vacuum sputtering and one layer coating by conventional wet process. The first layer is formed by an oxide material. The second layer is arranged on an underlying first layer and is formed by a metal. The third layer is arranged on an underlying second layer and is coated by vacuum sputtering. The third layer provides high conductivity thin film with resistance as low as 102 &OHgr;/square. The fourth layer is arranged on an underlying third layer and is formed by an oxide material. The fifth layer is formed by an oxide material. The fourth layer and fifth layer are coated by vacuum sputtering. The sixth layer is deposited on the top surface and is formed by a wet silica coating process.

Abstract: An anti-reflection high conductivity multi-layer coating for CRT products includes three layers coating created by vacuum sputtering and a fourth layer coating created by wet coating process. A first layer, nearest to the substrate, is made of a transparent conductive oxide material having a refractive index within the approximating range of 1.85 to 2.1 at a wavelength of 520 nm. The second layer is formed from an oxide material having a refractive index within the range of 1.45 to 1.50 at a wavelength of 520 nm. The third layer is formed of an oxide material having a refractive index within the range of 1.85 to 2.2 at a wavelength of 520 nm. The fourth layer has a refractive index within the range of 1.45 to 1.55 at a wavelength of 520 nm.

Abstract: An anti-reflection screen filter is provided that includes four consecutively applied layers to a substrate. A first layer, furthest from the substrate, is arranged on an underlying second layer and comprises an oxide material having a refractive index within the approximating range of 1.46 to 1.50 at a wavelength of 520 nm. The second layer is arranged on an underlying third layer and is formed by a metal having a refractive index within the approximating range of 1.5 to 4.0 at a wavelength of 520 nm. The third layer is arranged on an underlying fourth layer and is formed by a metal having a refractive index within the approximating range of 0.2 to 1.4 at a wavelength of 520 nm. The fourth layer is disposed on the front surface of a substrate and is formed by a metal having a refractive index within the approximating range of 1.5 to 4.0 at a wavelength of 520 nm.

Abstract: A magnetic recording medium controllably textured by performing sputter etching or reactive ion etching either on the surface of a smooth substrate, which can be nickel-phosphorous/aluminum-magnesium (Al--Mg) substrate, or on the surface of a protective layer, such as a carbon overcoat. Both types of etching processes described above are carried out in a sputtering apparatus and have an etching mask of discrete hemi-spherical structures formed by the agglomeration of a low melting point metal or alloy such as indium or Pb--Sn, which has been deposited on a non-wetting surface such as the oxidized surface of NiP layer or the protective carbon overcoat prior to etching. The morphology of the textured surface can be controlled by adjusting the average thickness of the deposited masking materials, the gas composition, as well as the base pressure during etching.

Abstract: A method for preparing a superconductor sputtering target is disclosed in which sputtering targets for coating superconductor films can be prepared essentially by mixing oxides (carbonates or fluorides) of metals such as Y, Ba, Cu (Bi, Pb), Sr, Ca,Cu) with the atomic ratio of individual elements be controlled in a specific range, an oxide superconductor paste being prepared by blending an organic binder and an organic solvent according to a specific solid percentage, and a metal such as aluminum being used as the substrate; by scraping with a squeegee and adjusting the distance between a stencil and the substrate such that the superconductor paste seeps through a mesh to be printed on the substrate and then dried; after scraping, screen-printing and drying having been repeated several times, the substrate being placed into an oven and heated to a temperature of 400.degree.-450.degree. C., at a rate of less than 5.degree. C.

Abstract: Preparation of superconducting epitaxial film using the method of liquid phase epitaxial growth comprising the steps of:(1) melting the oxides of bismuth, calcium, strontium, and copper or the oxides of thallium, calcium, barium, and copper at temperature in the range of 900.degree. C. to 950.degree. C. to form a melt;(2) contacting the melt in (1) with magnesium oxide or mono crystalline materials;(3) lowering the temperature of the melt at a rate of 0.3.degree.-2.degree. C./min until the temperature is within the range of 820.degree. C. to 890.degree. C.;(4) separating the melt and the magnesium oxide substrate or mono crystalline material to obtain a superconducting epitaxial film; and(5) quenching said film in (4) until the temperature thereof is at room temperature, whereby a superconducting epitaxial film having a thickness of 40 to 150 .mu.m is obtained.