Abstract: A method for obtaining a culture supernatant form microalgae is provided, particularly wherein the culture supernatant is IMAC-enriched microalga culture supernatant and to an IMAC-enriched microalga culture supernatant obtained by the method of the invention. Also provided is a combination having a microalgal culture supernatant and a growth factor and to a cell culture media; a cosmetic composition and pharmaceutical composition and uses thereof.

Abstract: A radiation measuring technique includes adjusting a threshold level of a radiation sensor in a radiation-measuring circuit and obtaining an output signal based on radiation dose sensed by the radiation sensor.

Abstract: A double gate MOSFET having a control gate and a signal gate. The effective threshold voltage seen by the signal gate may be modified by charging the control gate. The effective threshold voltage may be increased in magnitude to reduce sub-threshold leakage current when the double gate MOSFET is inactive. When inactive, the control gate is maintained at a negative voltage for a double gate nMOSFET, and is maintained at a positive voltage for a double gate pMOSFET. When active, the control gate is charged to a voltage close to the threshold voltage, and then floated, so that a signal voltage applied to the signal gate may turn the double gate MOSFET ON during a signal voltage transition via the coupling capacitance between the signal and control gates.

Abstract: An apparatus and method for reducing leakage current of transistors used in an integrated circuit, which selectively switch a processor circuit in the integrated circuit to a standby state. A cooling device is included and selectively located in an area of the integrated circuit that is in close proximity to a transistor used to switch a processor circuit between active and standby states. The cooling device cools the transistor in order to improve both its leakage and active current states, thereby increasing efficiency of the transistor and reducing its leakage current.

Abstract: A radiation measuring technique includes adjusting a threshold level of a radiation sensor in a radiation-measuring circuit and obtaining an output signal based on radiation dose sensed by the radiation sensor.

Abstract: A double gate MOSFET having a control gate and a signal gate. The effective threshold voltage seen by the signal gate may be modified by charging the control gate. The effective threshold voltage may be increased in magnitude to reduce sub-threshold leakage current when the double gate MOSFET is inactive. When inactive, the control gate is maintained at a negative voltage for a double gate nMOSFET, and is maintained at a positive voltage for a double gate pMOSFET. When active, the control gate is charged to a voltage close to the threshold voltage, and then floated, so that a signal voltage applied to the signal gate may turn the double gate MOSFET ON during a signal voltage transition via the coupling capacitance between the signal and control gates.

Abstract: An apparatus and method for reducing leakage current of transistors used in an integrated circuit, which selectively switch a processor circuit in the integrated circuit to a standby state. A cooling device is included and selectively located in an area of the integrated circuit that is in close proximity to a transistor used to switch a processor circuit between active and standby states. The cooling device cools the transistor in order to improve both its leakage and active current states, thereby increasing efficiency of the transistor and reducing its leakage current.

Abstract: A radiation measuring technique includes adjusting a threshold level of a radiation sensor in a radiation-measuring circuit and obtaining an output signal based on radiation dose sensed by the radiation sensor.

Abstract: A radiation measuring technique includes adjusting a threshold level of a radiation sensor in a radiation-measuring circuit and obtaining an output signal based on radiation dose sensed by the radiation sensor.

Abstract: A circuit includes a switched current source having a switching transistor coupled in series to a bias transistor. An isolation transistor is coupled in series to an output of the switched current source. The width of the switching transistor is greater than the width of the isolation transistor.