Abstract: A hermetic ceramic package for high current signals includes a substrate made of a plurality of ceramic green sheets that form an upper body portion having an upper surface and a lower body portion having a lower surface and an intermediate surface between the upper surface and the lower surface. A first conductive plate is formed on the intermediate surface and a first plurality of conductive pad vias are formed in the lower body portion, extending from the first conductive plate to the lower surface of the lower body portion. A heat sink if coupled to the lower surface of the lower body portion and a first conductive pad also coupled to the lower surface such that the first conductive pad is electrically coupled to the first plurality of conductive pad vias.

Abstract: A hermetic ceramic package for high current signals includes a substrate made of a plurality of ceramic green sheets that form an upper body portion having an upper surface and a lower body portion having a lower surface and an intermediate surface between the upper surface and the lower surface. A first conductive plate is formed on the intermediate surface and a first plurality of conductive pad vias are formed in the lower body portion, extending from the first conductive plate to the lower surface of the lower body portion. A heat sink if coupled to the lower surface of the lower body portion and a first conductive pad also coupled to the lower surface such that the first conductive pad is electrically coupled to the first plurality of conductive pad vias.

Abstract: A half bridge gate driving circuit for providing gate driving circuits in a bi-hecto celcius (200 degrees celcius) operating environment having multiple functions including combinations of multiple level logic inputs, noise immunity, fault protection, overlap protection, pulse modulation, high-frequency modulation with transformer based isolation, high-frequency demodulation back to pulse width modulation, deadtime generator, level shifter for high side transistor, overcurrent protection, and undervoltage lockout.

Abstract: A half bridge gate driving circuit for providing gate driving circuits in a bi-hecto celcius (200 degrees celcius) operating environment having multiple functions including combinations of multiple level logic inputs, noise immunity, fault protection, overlap protection, pulse modulation, high-frequency modulation with transformer based isolation, high-frequency demodulation back to pulse width modulation, deadtime generator, level shifter for high side transistor, overcurrent protection, and undervoltage lockout.