Patents by Inventor Jay Dee Pinson, II

Jay Dee Pinson, II has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • ELECTROSTATIC CHUCK WITH IMPROVED TEMPERATURE CONTROL
    Publication number: 20220005723
    Abstract: Embodiments of the disclosure provide electrostatic chucks for securing substrates during processing. Some embodiments of this disclosure provide methods and apparatus for increased temperature control across the radial profile of the substrate. Some embodiments of the disclosure provide methods and apparatus for providing control of hydrogen concentration in processed films during a high-density plasma (HDP) process.
    Type: Application
    Filed: July 6, 2021
    Publication date: January 6, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Hanish Kumar Panavalappil Kumarankutty, Sean M. Seutter, Sudhir R. Gondhalekar, Wendell Glenn Boyd, JR., Badri Ramamurthi, Shekhar Athani, Anil Kumar Kalal, Jay Dee Pinson, II
  • Inductively coupled HDP-CVD reactor
    Patent number: 6182602
    Abstract: The present invention provides an HDP-CVD tool using simultaneous deposition and sputtering of doped and undoped silicon dioxide capable of excellent gap fill and blanket film deposition on wafers. The tool of the present invention includes: a dual RF zone inductively coupled plasma source; a dual zone gas distribution system; temperature controlled surfaces within the tool; a symmetrically shaped turbomolecular pumped chamber body; a dual cooling zone electrostatic chuck; an all ceramic/aluminum alloy chamber; and a remote plasma chamber cleaning system.
    Type: Grant
    Filed: May 29, 1997
    Date of Patent: February 6, 2001
    Assignee: Applied Materials, Inc.
    Inventors: Fred C. Redeker, Romuald Nowak, Tetsuya Ishikawa, Troy Detrick, Jay Dee Pinson, II
  • Multi-zone RF inductively coupled source configuration
    Patent number: 6083344
    Abstract: The present invention provides an HDP-CVD tool using simultaneous deposition and sputtering of doped and undoped silicon dioxide capable of excellent gap fill and blanket film deposition on wafers. The tool of the present invention includes: a dual RF zone inductively coupled plasma source; a dual zone gas distribution system; temperature controlled surfaces within the tool; a symmetrically shaped turbomolecular pumped chamber body; a dual cooling zone electrostatic chuck; an all ceramic/aluminum alloy chamber; and a remote plasma chamber cleaning system.
    Type: Grant
    Filed: May 29, 1997
    Date of Patent: July 4, 2000
    Assignee: Applied Materials, Inc.
    Inventors: Hiroji Hanawa, Tetsuya Ishikawa, Manus Wong, Shijian Li, Kaveh Niazi, Kenneth Smyth, Fred C. Redeker, Troy Detrick, Jay Dee Pinson, II