Patents by Inventor Jay Scheuer
Jay Scheuer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9187832Abstract: An ion source includes an ion source chamber, a cathode disposed within the ion source chamber and configured to emit electrons to generate an arc plasma, and a repeller configured to repell electrons back into the arc plasma. The ion source chamber and cathode may comprise a refractory metal. The ion source chamber further includes a gas source configured to provide a halogen species to the ion source chamber. The reactive insert is interoperative with the halogen species to yield a first etch rate of the refractory metal material within the ion source chamber under a first set of operating conditions that is less than a second etch rate of the refractory metal material within the ion source chamber under the first set of operating conditions when the reactive insert is not disposed within the ion source chamber.Type: GrantFiled: May 3, 2013Date of Patent: November 17, 2015Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Costel Biloiu, David P. Sporleder, Jay Scheuer, Neil Bassom
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Publication number: 20140326594Abstract: An ion source includes an ion source chamber, a cathode disposed within the ion source chamber and configured to emit electrons to generate an arc plasma, and a repeller configured to repell electrons back into the arc plasma. The ion source chamber and cathode may comprise a refractory metal. The ion source chamber further includes a gas source configured to provide a halogen species to the ion source chamber. The reactive insert is interoperative with the halogen species to yield a first etch rate of the refractory metal material within the ion source chamber under a first set of operating conditions that is less than a second etch rate of the refractory metal material within the ion source chamber under the first set of operating conditions when the reactive insert is not disposed within the ion source chamber.Type: ApplicationFiled: May 3, 2013Publication date: November 6, 2014Applicant: Varian Semiconductor Equipment Associates, Inc.Inventors: Costel Biloiu, David P. Sporleder, Jay Scheuer, Neil Bassom
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Patent number: 8590485Abstract: An ion source, capable of generating high-density wide ribbon ion beam, utilizing inductively coupled plasma production is disclosed. As opposed to conventional ICP sources, the present disclosure describes an ICP source which is not cylindrical. Rather, the source is defined such that its width, which is the dimension along which the beam is extracted, is greater than its height. The depth of the source may be defined to maximize energy transfer from the antenna to the plasma. In a further embodiment, a multicusp magnetic field surrounding the ICP source is used to further increase the current density and improve the uniformity of the extracted ion beam. Ion beam uniformity can also be controlled by means of several independent controls, including gas flow rate, and input RF power.Type: GrantFiled: April 26, 2010Date of Patent: November 26, 2013Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Costel Biloiu, Jay Scheuer, Joseph Olson, Frank Sinclair, Daniel Distaso
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Patent number: 8142607Abstract: An ion source, capable of generating high density wide ribbon ion beam, utilizing one or more helicon plasma sources is disclosed. In addition to the helicon plasma source(s), the ion source also includes a diffusion chamber. The diffusion chamber has an extraction aperture oriented along the same axis as the dielectric cylinder of the helicon plasma source. In one embodiment, dual helicon plasma sources, located on opposing ends of the diffusion chamber are used to create a more uniform extracted ion beam. In a further embodiment, a multicusp magnetic field is used to further improve the uniformity of the extracted ion beam.Type: GrantFiled: August 28, 2008Date of Patent: March 27, 2012Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Costel Biloiu, Alexander Perel, Jay Scheuer
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Publication number: 20110259269Abstract: An ion source, capable of generating high-density wide ribbon ion beam, utilizing inductively coupled plasma production is disclosed. As opposed to conventional ICP sources, the present disclosure describes an ICP source which is not cylindrical. Rather, the source is defined such that its width, which is the dimension along which the beam is extracted, is greater than its height. The depth of the source may be defined to maximize energy transfer from the antenna to the plasma. In a further embodiment, a multicusp magnetic field surrounding the ICP source is used to further increase the current density and improve the uniformity of the extracted ion beam. Ion beam uniformity can also be controlled by means of several independent controls, including gas flow rate, and input RF power.Type: ApplicationFiled: April 26, 2010Publication date: October 27, 2011Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.Inventors: Costel Biloiu, Jay Scheuer, Joseph Olson, Frank Sinclair, Daniel Distaso
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Patent number: 7999479Abstract: An ion source, capable of generating high-density wide ribbon ion beam, utilizing one or more plasma sources is disclosed. In addition to the plasma source(s), the ion source also includes a diffusion chamber. The diffusion chamber has an extraction aperture oriented along the same axis as the dielectric cylinder of the plasma source. In one embodiment, dual plasma sources, located on opposing ends of the diffusion chamber are used to create a more uniform extracted ion beam. In a further embodiment, a multicusp magnetic field is used to further improve the uniformity of the extracted ion beam.Type: GrantFiled: April 16, 2009Date of Patent: August 16, 2011Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Costel Biloiu, Jay Scheuer, Alexander Perel
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Publication number: 20100264328Abstract: An ion source, capable of generating high-density wide ribbon ion beam, utilizing one or more plasma sources is disclosed. In addition to the plasma source(s), the ion source also includes a diffusion chamber. The diffusion chamber has an extraction aperture oriented along the same axis as the dielectric cylinder of the plasma source. In one embodiment, dual plasma sources, located on opposing ends of the diffusion chamber are used to create a more uniform extracted ion beam. In a further embodiment, a multicusp magnetic field is used to further improve the uniformity of the extracted ion beam.Type: ApplicationFiled: April 16, 2009Publication date: October 21, 2010Inventors: Costel Biloiu, Jay Scheuer, Alexander Perel
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Publication number: 20100055345Abstract: An ion source, capable of generating high density wide ribbon ion beam, utilizing one or more helicon plasma sources is disclosed. In addition to the helicon plasma source(s), the ion source also includes a diffusion chamber. The diffusion chamber has an extraction aperture oriented along the same axis as the dielectric cylinder of the helicon plasma source. In one embodiment, dual helicon plasma sources, located on opposing ends of the diffusion chamber are used to create a more uniform extracted ion beam. In a further embodiment, a multicusp magnetic field is used to further improve the uniformity of the extracted ion beam.Type: ApplicationFiled: August 28, 2008Publication date: March 4, 2010Inventors: Costel Biloiu, Alexander Perel, Jay Scheuer
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Patent number: 7521691Abstract: This disclosure provides an approach for magnetic monitoring of a Faraday cup for an ion implanter. In this disclosure, there is a vacuum chamber and a Faraday cup located within the vacuum chamber. The Faraday cup is configured to move within the path of an ion beam entering the vacuum chamber. A magnetic monitor located about the vacuum chamber, is configured to distinguish a magnetic field associated with the Faraday cup from stray magnetic fields.Type: GrantFiled: December 8, 2006Date of Patent: April 21, 2009Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Joseph P. Dzengeleski, Morgan D. Evans, Jay Scheuer, Ashwin Shetty, Kenneth Swenson
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Publication number: 20080245957Abstract: An approach that tunes an ion implanter for optimal performance is described. In one embodiment, there is a system for tuning an ion implanter having multiple beamline elements to generate an ion beam having desired beam properties. In this embodiment, the system comprises a beamline element settings controller configured to provide beamline element settings for generating the desired beam properties. A tuning model correlates the beamline element settings with beam properties. A calibration component is configured to calibrate the tuning model in response to a determination that beam properties measured from using the tuned beamline element settings differs from the determined tuned beamline element settings.Type: ApplicationFiled: April 3, 2007Publication date: October 9, 2008Inventors: Atul Gupta, Jay Scheuer, Daniel Distaso, Antonella Cucchetti, William G. Callahan
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Publication number: 20080135776Abstract: This disclosure provides an approach for magnetic monitoring of a Faraday cup for an ion implanter. In this disclosure, there is a vacuum chamber and a Faraday cup located within the vacuum chamber. The Faraday cup is configured to move within the path of an ion beam entering the vacuum chamber. A magnetic monitor located about the vacuum chamber, is configured to distinguish a magnetic field associated with the Faraday cup from stray magnetic fields.Type: ApplicationFiled: December 8, 2006Publication date: June 12, 2008Inventors: Joseph P. Dzengeleski, Morgan D. Evans, Jay Scheuer, Ashwin Shetty, Kenneth Swenson
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Patent number: 7132672Abstract: A Faraday dose and uniformity monitor can include a magnetically suppressed annular Faraday cup surrounding a target wafer. A narrow aperture can reduce discharges within Faraday cup opening. The annular Faraday cup can have a continuous cross section to eliminate discharges due to breaks. A plurality of annular Faraday cups at different radii can independently measure current density to monitor changes in plasma uniformity. The magnetic suppression field can be configured to have a very rapid decrease in field strength with distance to minimize plasma and implant perturbations and can include both radial and azimuthal components, or primarily azimuthal components. The azimuthal field component can be generated by multiple vertically oriented magnets of alternating polarity, or by the use of a magnetic field coil. In addition, dose electronics can provide integration of pulsed current at high voltage, and can convert the integrated charge to a series of light pulses coupled optically to a dose controller.Type: GrantFiled: April 2, 2004Date of Patent: November 7, 2006Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Steven R. Walther, Rajesh Dorai, Harold Persing, Jay Scheuer, Bon-Woong Koo, Bjorn O. Pedersen, Chris Leavitt, Timothy Miller
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Publication number: 20060099830Abstract: Methods and apparatus for plasma implantation of a workpiece, such as a semiconductor wafer, are provided. A method includes introducing into a plasma doping chamber a dopant gas selected from the group consisting of PF3, AsF3, AsF5 and mixtures thereof, forming in the plasma doping chamber a plasma containing ions of the dopant gas, the plasma having a plasma sheath at or near a surface of the workpiece, and accelerating the dopant gas ions across the plasma sheath toward the workpiece, wherein the dopant gas ions are implanted into the workpiece. The selected dopant gas limits deposition of neutral particles on the workpiece.Type: ApplicationFiled: November 5, 2004Publication date: May 11, 2006Applicant: Varian Semiconductor Equipment Associates, Inc.Inventors: Steven Walther, Sandeep Mehta, Jay Scheuer
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Publication number: 20060043531Abstract: A method for fabricating a semiconductor-based device includes providing a doped semiconductor substrate, introducing a second dopant into the substrate to define a pn junction, and introducing a neutralizing species into the substrate in the neighborhood of the pn junction to reduce a capacitance associated with the pn junction. A semiconductor-based device includes a semiconductor substrate having first and second dopants, and a neutralizing species. The first and second dopants define a pn junction, and the neutralizing species neutralizes a portion of the first dopant in the neighborhood of the pn junction to decrease a capacitance associated with the pn junction.Type: ApplicationFiled: August 27, 2004Publication date: March 2, 2006Applicant: Varian Semiconductor Equipment Associates, Inc.Inventors: Yuri Erokhin, Ukyo Jeong, Jay Scheuer, Steven Walther
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Publication number: 20050223991Abstract: A Faraday dose and uniformity monitor can include a magnetically suppressed annular Faraday cup surrounding a target wafer. A narrow aperture can reduce discharges within Faraday cup opening. The annular Faraday cup can have a continuous cross section to eliminate discharges due to breaks. A plurality of annular Faraday cups at different radii can independently measure current density to monitor changes in plasma uniformity. The magnetic suppression field can be configured to have a very rapid decrease in field strength with distance to minimize plasma and implant perturbations and can include both radial and azimuthal components, or primarily azimuthal components. The azimuthal field component can be generated by multiple vertically oriented magnets of alternating polarity, or by the use of a magnetic field coil. In addition, dose electronics can provide integration of pulsed current at high voltage, and can convert the integrated charge to a series of light pulses coupled optically to a dose controller.Type: ApplicationFiled: April 2, 2004Publication date: October 13, 2005Inventors: Steven Walther, Rajesh Dorai, Harold Persing, Jay Scheuer, Bon-Woong Koo, Bjorn Pedersen, Chris Leavitt, Timothy Miller
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Publication number: 20050205211Abstract: A plasma immersion ion implant apparatus and method, and a plasma chamber, each configured to provide a uniform ion flux and to dissipate the effects of secondary electrons are disclosed. The invention includes a plasma chamber including a dielectric tophat configuration and a conductive top section that may be liquid cooled. In addition, the invention provides a radio frequency (RF) antenna configuration including an active antenna that is coupled to an RF source and a parasitic antenna that is not directly coupled to any RF source, but may be grounded. The RF antenna allows for tuning of the RF coupling.Type: ApplicationFiled: March 22, 2004Publication date: September 22, 2005Inventors: Vikram Singh, Timothy Miller, Paul Murphy, Harold Persing, Jay Scheuer, Donna Smatlak, Edmund Winder, Robert Bettencourt