Abstract: Exemplary methods of semiconductor processing may include providing a first precursor to a semiconductor processing chamber. A substrate may be disposed within a processing region of the semiconductor processing chamber. The first precursor may include one or more of niobium, tantalum, or titanium. The methods may include contacting the substrate with the first precursor. The contacting may form a layer of metal on the substrate. The methods may include providing a second precursor to a semiconductor processing chamber. The second precursor comprises oxygen. The methods may include contacting the layer of metal with the second precursor. The contacting may form a layer of metal oxide on the substrate. The layer of metal oxide may be one or more of niobium oxide, tantalum oxide, or titanium oxide.

Abstract: Embodiments disclosed herein include a via structure and methods of forming the via structure. In an embodiment, the via structure comprises a substrate and an opening through the substrate. In an embodiment, the opening has a first portion and a second portion under the first portion. In an embodiment, the via structure further comprises a lining on sidewalls of the first portion of the opening, and a via filling the opening. In an embodiment, the via has a first region with a first width and a second region with a second width, wherein the first width is smaller than the second width.