Patents by Inventor Je Hee CHO

Je Hee CHO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11431299
    Abstract: A bias circuit includes a current generating circuit generating an internal base current based on a reference current, a bias output circuit generating a base bias current based on the internal base current and outputting the base bias current to an amplifying circuit, and a temperature compensation circuit regulating the base bias current based on a temperature voltage reflecting a change in ambient temperature.
    Type: Grant
    Filed: August 7, 2019
    Date of Patent: August 30, 2022
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Kyu Jin Choi, Je Hee Cho
  • Patent number: 11139786
    Abstract: An amplifying device includes a current generating circuit, a bias amplifying circuit, and a compensation circuit. The current generating circuit is configured to generate an internal current based on an internal voltage. The bias amplifying circuit, connected to the current generating circuit, is configured to output a bias current generated by amplifying the internal current to a power amplifying circuit. The compensation circuit, connected to the current generating circuit, is configured to adjust the internal voltage based on a bias voltage of the power amplifying circuit.
    Type: Grant
    Filed: December 24, 2019
    Date of Patent: October 5, 2021
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Je Hee Cho, Kyu Jin Choi
  • Patent number: 10972056
    Abstract: A bias circuit includes a current generating circuit generating a first compensation current and a second compensation current, in which an ambient temperature change is reflected, based on a reference current, a first temperature compensation circuit generating a first base bias current, based on the first compensation current, to output the first base bias current to a base node of an amplifying circuit, and a second temperature compensation circuit generating a second base bias current, based on the second compensation current, to output the second base bias current to the base node of the amplifying circuit.
    Type: Grant
    Filed: August 27, 2019
    Date of Patent: April 6, 2021
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Kyu Jin Choi, Je Hee Cho
  • Publication number: 20210091731
    Abstract: An amplifying device includes a current generating circuit, a bias amplifying circuit, and a compensation circuit. The current generating circuit is configured to generate an internal current based on an internal voltage. The bias amplifying circuit, connected to the current generating circuit, is configured to output a bias current generated by amplifying the internal current to a power amplifying circuit. The compensation circuit, connected to the current generating circuit, is configured to adjust the internal voltage based on a bias voltage of the power amplifying circuit.
    Type: Application
    Filed: December 24, 2019
    Publication date: March 25, 2021
    Applicant: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Je Hee CHO, Kyu Jin CHOI
  • Patent number: 10924062
    Abstract: A power amplifying apparatus includes a first bias circuit configured to generate a first bias current by adding a boost current to a base bias current generated from a reference current, a first amplification circuit configured to receive the first bias current and amplify a signal input through an input terminal of the first amplification unit to output a first amplified signal, and a bias boosting circuit configured to generate the boost current, based on a magnitude of a harmonic component in the amplified signal output from the first amplification circuit.
    Type: Grant
    Filed: October 24, 2018
    Date of Patent: February 16, 2021
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Kyu Jin Choi, Jae Hyouck Choi, Je Hee Cho
  • Patent number: 10892719
    Abstract: A multistage power amplifier comprises a first amplification circuit which receives a first bias current; a second amplification circuit which receives a second bias current; an envelope detection circuit which outputs a direct current (DC) detection voltage based on an envelope of an input radio frequency (RF) signal; and a bias compensation circuit which compensates for the first bias current based on the second bias current in response to the DC detection voltage.
    Type: Grant
    Filed: February 25, 2019
    Date of Patent: January 12, 2021
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Kyu Jin Choi, Je Hee Cho
  • Publication number: 20200336115
    Abstract: A bias circuit includes a current generating circuit generating a first compensation current and a second compensation current, in which an ambient temperature change is reflected, based on a reference current, a first temperature compensation circuit generating a first base bias current, based on the first compensation current, to output the first base bias current to a base node of an amplifying circuit, and a second temperature compensation circuit generating a second base bias current, based on the second compensation current, to output the second base bias current to the base node of the amplifying circuit.
    Type: Application
    Filed: August 27, 2019
    Publication date: October 22, 2020
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Kyu Jin CHOI, Je Hee CHO
  • Publication number: 20200336116
    Abstract: A bias circuit includes a current generating circuit generating an internal base current based on a reference current, a bias output circuit generating a base bias current based on the internal base current and outputting the base bias current to an amplifying circuit, and a temperature compensation circuit regulating the base bias current based on a temperature voltage reflecting a change in ambient temperature.
    Type: Application
    Filed: August 7, 2019
    Publication date: October 22, 2020
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Kyu Jin CHOI, Je Hee CHO
  • Publication number: 20200014343
    Abstract: A multistage power amplifier comprises a first amplification circuit which receives a first bias current; a second amplification circuit which receives a second bias current; an envelope detection circuit which outputs a direct current (DC) detection voltage based on an envelope of an input radio frequency (RF) signal; and a bias compensation circuit which compensates for the first bias current based on the second bias current in response to the DC detection voltage.
    Type: Application
    Filed: February 25, 2019
    Publication date: January 9, 2020
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Kyu Jin CHOI, Je Hee CHO
  • Publication number: 20190199291
    Abstract: A power amplifying apparatus includes a first bias circuit configured to generate a first bias current by adding a boost current to a base bias current generated from a reference current, a first amplification circuit configured to receive the first bias current and amplify a signal input through an input terminal of the first amplification unit to output a first amplified signal, and a bias boosting circuit configured to generate the boost current, based on a magnitude of a harmonic component in the amplified signal output from the first amplification circuit.
    Type: Application
    Filed: October 24, 2018
    Publication date: June 27, 2019
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Kyu Jin CHOI, Jae Hyouck CHOI, Je Hee CHO