Patents by Inventor Je Hyuk Choi

Je Hyuk Choi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Transfer method using deformable film
    Patent number: 11276603
    Abstract: A transfer method of transferring an object to a target substrate by using a deformable film is provided. The method includes: a first process of forming an object on a source substrate, a second process of placing a deformable film on the source substrate on which the object is formed, a third process of embedding the object into the deformable film, a fourth process of separating an object, which is to be transferred, from the source substrate, integrating the transfer object in or on a surface of the deformable film, and separating deformable film, in which the transfer object is integrated, from the source substrate, and a fifth process of transferring the object integrated into the deformable film to a target substrate.
    Type: Grant
    Filed: June 22, 2020
    Date of Patent: March 15, 2022
    Assignee: LC SQUARE CO., LTD.
    Inventors: Je Hyuk Choi, Chang Wan Kim, Chan Soo Shin, Hyeong Ho Park, Shin Keun Kim
  • TRANSFER METHOD USING DEFORMABLE FILM
    Publication number: 20200321234
    Abstract: A transfer method of transferring an object to a target substrate by using a deformable film is provided. The method includes: a first process of forming an object on a source substrate, a second process of placing a deformable film on the source substrate on which the object is formed, a third process of embedding the object into the deformable film, a fourth process of separating an object, which is to be transferred, from the source substrate, integrating the transfer object in or on a surface of the deformable film, and separating deformable film, in which the transfer object is integrated, from the source substrate, and a fifth process of transferring the object integrated into the deformable film to a target substrate.
    Type: Application
    Filed: June 22, 2020
    Publication date: October 8, 2020
    Applicant: LC SQUARE CO., LTD.
    Inventors: Je Hyuk CHOI, Chang Wan KIM, Chan Soo SHIN, Hyeong Ho PARK, Shin Keun KIM
  • Methods for site-selective growth of horizontal nanowires, nanowires grown by the methods and nanodevices comprising the nanowires
    Patent number: 8263480
    Abstract: Methods for the site-selective growth of horizontal nanowires are provided. According to the methods, horizontal nanowires having a predetermined length and diameter can be grown site-selectively at desired sites in a direction parallel to a substrate to fabricate a device with high degree of integration. Further provided are nanowires grown by the methods and nanodevices comprising the nanowires.
    Type: Grant
    Filed: February 18, 2010
    Date of Patent: September 11, 2012
    Assignees: Samsung Electronics Co., Ltd., Seoul National University Industry Foundation
    Inventors: Eun Kyung Lee, Byoung Lyong Choi, Young Kuk, Je Hyuk Choi, Hun Huy Jung
  • METHODS FOR SITE-SELECTIVE GROWTH OF HORIZONTAL NANOWIRES, NANOWIRES GROWN BY THE METHODS AND NANODEVICES COMPRISING THE NANOWIRES
    Publication number: 20100144126
    Abstract: Methods for the site-selective growth of horizontal nanowires are provided. According to the methods, horizontal nanowires having a predetermined length and diameter can be grown site-selectively at desired sites in a direction parallel to a substrate to fabricate a device with high degree of integration. Further provided are nanowires grown by the methods and nanodevices comprising the nanowires.
    Type: Application
    Filed: February 18, 2010
    Publication date: June 10, 2010
    Applicants: SAMSUNG ELECTRONICS CO., LTD., SEOUL NATIONAL UNIVERSITY INDUSTRY FOUNDATION
    Inventors: Eun Kyung LEE, Byoung Lyong CHOI, Young KUK, Je Hyuk CHOI, Hun Huy JUNG
  • Methods for site-selective growth of horizontal nanowires, nanowires grown by the methods and nanodevices comprising the nanowires
    Patent number: 7696097
    Abstract: Methods for the site-selective growth of horizontal nanowires are provided. According to the methods, horizontal nanowires having a predetermined length and diameter can be grown site-selectively at desired sites in a direction parallel to a substrate to fabricate a device with high degree of integration. Further provided are nanowires grown by the methods and nanodevices comprising the nanowires.
    Type: Grant
    Filed: March 19, 2008
    Date of Patent: April 13, 2010
    Assignees: Samsung Electronics Co., Ltd., Seoul National University Industry Foundation
    Inventors: Eun Kyung Lee, Byoung Lyong Choi, Young Kuk, Je Hyuk Choi, Hun Huy Jung
  • METHODS FOR SITE-SELECTIVE GROWTH OF HORIZONTAL NANOWIRES, NANOWIRES GROWN BY THE METHODS AND NANODEVICES COMPRISING THE NANOWIRES
    Publication number: 20090057653
    Abstract: Methods for the site-selective growth of horizontal nanowires are provided. According to the methods, horizontal nanowires having a predetermined length and diameter can be grown site-selectively at desired sites in a direction parallel to a substrate to fabricate a device with high degree of integration. Further provided are nanowires grown by the methods and nanodevices comprising the nanowires.
    Type: Application
    Filed: March 19, 2008
    Publication date: March 5, 2009
    Applicants: SAMSUNG ELECTRONICS CO., LTD., SEOUL NATIONAL UNIVERSITY INDUSTRY FOUNDATION
    Inventors: Eun Kyung LEE, Byoung Lyong CHOI, Young KUK, Je Hyuk CHOI, Hun Huy JUNG