Abstract: Methods of forming a contact for a semiconductor device with double barrier layer sets, and a device so formed are disclosed. Methods may include: depositing a first metal layer contacting a semiconductor substrate in a contact opening; depositing a first nitride barrier layer on the first metal layer; and annealing after depositing the first nitride barrier layer to form silicide region in a junction area underlying the contact opening with the first metal layer and the semiconductor substrate. After the annealing, a second metal layer may be deposited, followed by a second nitride barrier layer. A conductor is formed in a remaining portion of the contact opening. The double barrier layer sets prevent the formation of volcano defects and also advantageously reduce contact resistance.

Abstract: Methods of forming a contact for a semiconductor device with double barrier layer sets, and a device so formed are disclosed. Methods may include: depositing a first metal layer contacting a semiconductor substrate in a contact opening; depositing a first nitride barrier layer on the first metal layer; and annealing after depositing the first nitride barrier layer to form silicide region in a junction area underlying the contact opening with the first metal layer and the semiconductor substrate. After the annealing, a second metal layer may be deposited, followed by a second nitride barrier layer. A conductor is formed in a remaining portion of the contact opening. The double barrier layer sets prevent the formation of volcano defects and also advantageously reduce contact resistance.