Patents by Inventor Jean Fraleux

Jean Fraleux has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4643689
    Abstract: A picture taking tube with pyroelectric target and a process for determining the axes of least expansion of the target are provided. A connection is formed between the two electrodes of the target and the point of contact of this connection with the electrode deposited on the target is situated in the vicinity of one of the axes of least expansion of the target.
    Type: Grant
    Filed: August 1, 1984
    Date of Patent: February 17, 1987
    Assignee: Thomson-CSF
    Inventors: Jean Fraleux, Christine Hennion, Marie H. Mora, Jean L. Ploix
  • Patent number: 4486767
    Abstract: A bipolar element having a non-linear conductivity characteristic is constituted by a semiconductor body placed between two dielectric layers, a source electrode, a drain electrode and a grid electrode. The grid electrode is constituted by a first grid electrode part electrically connected to the drain electrode and a second grid electrode part electrically connected to the source electrode. This bipolar element is adapted to be used as a commutating component, especially in visualization or display devices.
    Type: Grant
    Filed: June 3, 1981
    Date of Patent: December 4, 1984
    Assignee: Thomson-CSF
    Inventors: Jean Fraleux, Jean L. Ploix
  • Patent number: 4395736
    Abstract: A Detection Matrix having elementary modules disposed in lines and in columns. Each module has a photoconductance, a thin-film MOS transistor and a storage capacitor. The gate of the transistor is connected to a line electrode. The source of the transistor is connected to a video amplifier, and the drain of the transistor is connected to one terminal of the photocapacitance and of the capacitor. The other terminal of the photoconductance of the capacitor are both connected to the line electrode following or preceding the line electrode connected to the gate of the transistor.
    Type: Grant
    Filed: July 17, 1981
    Date of Patent: July 26, 1983
    Assignee: Thomson - CSF
    Inventor: Jean Fraleux
  • Patent number: 4382187
    Abstract: A matrix having photosensitive elements formed by thin-film technology on the same dielectric substrate and disposed at each crossing point of perpendicular lines and columns. An addressing MOS transistor, formed by thin-film technology and associated with each photosensitive element, receives periodically on its grid an enabling signal applied simultaneously to all the addressing transistors in the same line of photosensitive elements and is connected for transferring to a video amplifier the electric signals provided by each addressed line of photosensitive elements. An amplifier for these signals is associated with each photosensitive element and is formed by thin-film technology.
    Type: Grant
    Filed: November 5, 1980
    Date of Patent: May 3, 1983
    Assignee: Thomson-CSF
    Inventors: Jean Fraleux, Jean L. Ploix
  • Patent number: 4369465
    Abstract: In order to suppress interferences in the display of a picture composed of electronically generated image points or dots, such as that of a television receiver, luminance signals determining the brightness of dots occupying adjacent positions in the picture are compared and are modified in the presence of excessive contrasts before being fed to a brightness-control electrode of a cathode-ray tube. When a given luminance signal S(i,j), pertaining to an image point P(i,j) where i indicates the order number of a line in a scanning frame and j indicates the position of the point in that line, differs in absolute value by more than a predetermined threshold from a corresponding signal S(i-k,j-p) pertaining to at least one adjacent image point P(i-k,j-p), where k and p may have values .+-.1 or 0, the signal S(i,j) is replaced by the signal S(i-k,j-p) incremented or decremented by a corrective signal Sc of predetermined magnitude, depending on whether signal S(i,j) is larger or smaller than signal S(i-k,j-p).
    Type: Grant
    Filed: June 11, 1979
    Date of Patent: January 18, 1983
    Assignee: Thomson-CSF
    Inventors: Michel Blamoutier, Jean Fraleux
  • Patent number: 4166956
    Abstract: A device for detecting the detection signal of the electron beam produced by an electron gun provided with a target on a semiconductor material. The target is scanned by the electron beam when operating. The target is provided upon one of its faces with a series of semiconductor elements generating electrical charge carriers under the effect of bombardment by the electron beam. The semiconductor elements are arranged, considered in the direction of scanning of the beam, to form an array of elementary generators. The array of elementary generators is designed to form two rows of elementary generator means. The rows are separated by a zone which is insensitive to the high energy electron beam when the latter is focused on that insensitive zone in the quiescent state. The information from the corresponding elementary generator is furnished in operation by sequential read out of the elementary generators.
    Type: Grant
    Filed: December 29, 1977
    Date of Patent: September 4, 1979
    Assignee: Thomson-CSF
    Inventor: Jean Fraleux