Abstract: A photovoltaic device comprising: a plurality of photovoltaic cells, separated from each other; a support receiving the cells; and a light guide in contact with the cells and comprising a primary guide with a surface that is proximal to the cells, where the proximal surface is oriented towards the cells and the support. The photovoltaic device comprises, between the cells, areas located between the support and the primary guide which comprise a material with an index of refraction less than that of the proximal surface, where the material is in contact with the proximal surface.

Abstract: A method for analyzing the crystal structure of a polycrystalline semiconductor material is described. According to one embodiment, the method includes exciting the material to make the material emit a luminescent signal, detecting, at each point of a mesh in a preset spatial region of the material, the luminescent signal at a variable polarization angle, in a frequency band of width greater than or equal to the width of the bandgap of the material, estimating, at each point of the mesh in the preset spatial region of the material, from the signal detected for said point of the mesh, a data characteristic of the modulation of the luminescent signal, modelled by a sum of sine waves, as a function of the polarization angle, and representing the characteristic data over all of the points of the mesh in the preset spatial region.

Abstract: A photovoltaic device comprising: a plurality of photovoltaic cells, separated from each other; a support receiving the cells; and a light guide in contact with the cells and comprising a primary guide with a surface that is proximal to the cells, where the proximal surface is oriented towards the cells and the support. The photovoltaic device comprises, between the cells, areas located between the support and the primary guide which comprise a material with an index of refraction less than that of the proximal surface, where the material is in contact with the proximal surface.

Abstract: A method for fabricating a photosensitive device, comprising: a first step of preparing, on a substrate, at least a first photosensitive portion, active within a range of wavelengths, the first portion being surrounded by a second portion that is inactive. A material, covering the first portion, is selectively arranged into a hydrophilic layer by an electrochemical process. The second portion comprises a hydrophobic material on an upper surface opposite the substrate. The method further comprises the following steps: spraying on the upper surfaces of the first and second portions a liquid comprising a transparent material, and forming a converging lens containing the material, above the first portion.

Abstract: An optoelectronic device comprising: a first conductive layer, a second conductive layer, an active layer between the first conductive layer and the second conductive layer, wherein the active layer comprises a submicrometer size structure of hexagonal type crystals of an element or alloy of elements selected from the carbon group.

Abstract: A photovoltaic component that includes at least one first array of photovoltaic nano-cells is disclosed. Each photovoltaic component includes an optical nano-antenna exhibiting an electromagnetic resonance in a first resonant spectral band, at least one lateral dimension of the optical nano-antenna being subwavelength in size, and a spectral conversion layer allowing at least part of the solar spectrum to be converted to said first resonant spectral band.

Abstract: A method for fabricating a photosensitive device, comprising: a first step of preparing, on a substrate, at least a first photosensitive portion, active within a range of wavelengths, the first portion being surrounded by a second portion that is inactive. A material, covering the first portion, is selectively arranged into a hydrophilic layer by an electrochemical process. The second portion comprises a hydrophobic material on an upper surface opposite the substrate. The method further comprises the following steps: spraying on the upper surfaces of the first and second portions a liquid comprising a transparent material, and forming a converging lens containing the material, above the first portion.

Abstract: A method for fabricating a photovoltaic device with light concentration, comprising: a first step of fabricating, on a substrate, a first array of photovoltaic cells from a stack of layers deposited on the substrate, the cells of the first array being connected to a first group of electrical connectors, a second step of forming a light concentration system above the cells of the first array. It further comprises: a third step, prior to at least the second step, of forming on the substrate a second array of photovoltaic cells from a stack of layers deposited on the substrate, the cells of the second array being interspersed with the cells of the first array and connected to a second group of electrical connectors, and being without a light concentration system.

Abstract: The invention relates to a method for determining the maximum open circuit voltage and the power that can be output by a photoconverter material subject to a measurement light intensity, the method including the following steps: measuring the photoluminescent intensity of the material, measuring the absorption rate of the photoconverter material at a second wavelength substantially equal to the photoluminescent wavelength of the photoconverter material, determining the maximum open circuit voltage of the photoconverter material with the measurement light intensity by means of the absorption rate and the photoluminescent intensity measured at substantially the same wavelength; said invention being characterized in that the light source and the photoconverter material are arranged such that the angular distributions of the rays incident on and emitted by the lit surface of the material and collected by the detector are substantially identical.

Abstract: A photovoltaic component that includes at least one first array of photovoltaic nano-cells is disclosed. Each photovoltaic component includes an optical nano-antenna exhibiting an electromagnetic resonance in a first resonant spectral band, at least one lateral dimension of the optical nano-antenna being subwavelength in size, and a spectral conversion layer allowing at least part of the solar spectrum to be converted to said first resonant spectral band.

Abstract: A method for analysing the crystal structure of a polycrystalline semiconductor material is described. According to one embodiment, the method includes exciting the material to make the material emit a luminescent signal, detecting, at each point of a mesh in a preset spatial region of the material, the luminescent signal at a variable polarization angle, in a frequency band of width greater than or equal to the width of the bandgap of the material, estimating, at each point of the mesh in the preset spatial region of the material, from the signal detected for said point of the mesh, a data characteristic of the modulation of the luminescent signal, modelled by a sum of sine waves, as a function of the polarization angle, and representing the characteristic data over all of the points of the mesh in the preset spatial region.

Abstract: Thin-layer photovoltaic cell structure with mirror layer. The invention relates to a photovoltaic cell structure intended for solar panel applications. The thin layer photovoltaic cell structure comprises at least one I-III-VI2 alloy layer (CIGS) with photovoltaic properties for the conversion of illuminating light into electricity. In particular, the structure comprises at least: one mirror layer (MR) comprising a surface reflecting (FR) a part of the illuminating light, where said reflecting surface (FR) is facing a first face (F1) of the I-III-VI2 alloy layer for receiving reflected illuminating light on said first face; and one or more first layers (CA, ENC) transparent to the illuminating light for receiving transmitted illuminating light on a second face (F2) of the I-III-VI2 alloy layer opposite to the first face (F1).

Abstract: The invention relates to a method for production of thin layers of semiconductor alloys of the I-III-VI2 type, including sulphur, for photovoltaic applications, whereby a heterostructure is firstly deposited on a substrate comprising a thin layer of precursor I-III-VI2 which is essentially amorphous and a thin layer, including at least some sulphur, the heterostructure is then annealed to promote the diffusion of the sulphur into the precursor layer and the at least partial crystallization of the I-III-VI2 alloy of the precursor layer with a stoichiometry which hence includes sulphur. A layer of selenium may also be deposited to assist the recrystallization processes or annealing.

Abstract: An optoelectronic device comprising: a first conductive layer, a second conductive layer, an active layer between the first conductive layer and the second conductive layer, wherein the active layer comprises a submicrometer size structure of hexagonal type crystals of an element or alloy of elements selected from the carbon group.

Abstract: A photovoltaic component including a set of layers suitable for producing a photovoltaic device is disclosed. The component has at least one first layer made of a conductive material forming a back electrical contact, a second layer made of a material that is absorbent in the solar spectrum, and a third layer made of a transparent conductive material forming a front electrical contact, and an electrically insulating layer arranged between said back electrical contact and said front electrical contact. The third layer is discontinuous in order to allow said layers of said set of layers to be stacked in one or more zones to form, in each of these zones, an active photovoltaic zone, and a fourth layer made of a conductive material, making electrical contact with said third layer made of a transparent conductive material, to form a peripheral electrical contact for each of said photovoltaic microcells.

Abstract: The invention relates to a method for determining the maximum open circuit voltage and the power that can be output by a photoconverter material subject to a measurement light intensity, the method including the following steps: measuring the photoluminescent intensity of the material, measuring the absorption rate of the photoconverter material at a second wavelength substantially equal to the photoluminescent wavelength of the photoconverter material, determining the maximum open circuit voltage of the photoconverter material with the measurement light intensity by means of the absorption rate and the photoluminescent intensity measured at substantially the same wavelength; said invention being characterised in that the light source and the photoconverter material are arranged such that the angular distributions of the rays incident on and emitted by the lit surface of the material and collected by the detector are substantially identical.

Abstract: The invention relates to a method of producing thin films of compound CIGS by means of electrodeposition. According to the invention, a surface-active compound, such as dodecyl sodium sulphate, is added to an electrolysis bath solution in order to promote the incorporation of gallium in the CIGS films.

Abstract: The invention relates to a method for production of thin layers of semiconductor alloys of the I-III-VI2 type, including sulphur, for photovoltaic applications, whereby a heterostructure is firstly deposited on a substrate comprising a thin layer of precursor I-III-VI2 which is essentially amorphous and a thin layer, including at least some sulphur, the heterostructure is then annealed to promote the diffusion of the sulphur into the precursor layer and the at least partial crystallization of the I-III-VI2 alloy of the precursor layer with a stoichiometry which hence includes sulphur. A layer of selenium may also be deposited to assist the recrystallization processes or annealing.

Abstract: The invention relates to the regeneration of an electrolysis bath for the production of I-III-VI<SB>Y</SB> compounds in thin layers, where y is approaching 2 and VI is an element including selenium, whereby selenium is regenerated in the form Se(IV) and/or with addition of oxygenated water to reoxidise the selenium in the bath to give the form Se(IV).

Abstract: The invention relates to a method of producing thin films of compound CIGS by means of electrodeposition. According to the invention, a surface-active compound, such as dodecyl sodium sulphate, is added to an electrolysis bath solution in order to promote the incorporation of gallium in the CIGS films.