Abstract: A method to produce an integrated circuit including depositing a first layer of a metallic chemical constituent on a silicon substrate. A protective layer including a main chemical constituent different from the main chemical constituent of the first layer is then deposited on this first layer. An additional layer is deposited on the protective layer and includes a main chemical constituent different from, equivalent to or of equivalent size to the main chemical constituent of the first layer. A heat treatment operation is carried out at a first temperature to generate a silicide including the main constituent of the first layer and silicon according to a first stoichiometry. In a subsequent step, the additional layer and the protective layer are removed. In another step, a further heat treatment operation is carried out at a temperature greater than the first temperature in order to change the stoichiometry of the previously created silicide.

Abstract: The invention provides a method and a device for determining the temperature of a semiconductor substrate. A resonance circuit (110) is provided on the semiconductor substrate and is formed by a junction capacitor (11) and an inductor (12). The substrate is placed on a holder and the resonance circuit (110) is irradiated with electromagnetic energy of an electromagnetic field (5) generated by a radiation device (200). A resonance frequency of the resonance circuit (110) is determined by detecting an effect of the resonance circuit (110) on the irradiated electromagnetic field (5), and a temperature of the semiconductor substrate is determined as a function of the resonance frequency. The method and device according to the invention provide for a more accurate determination of the temperature of the semiconductor substrate due to an increased sensitivity to the temperature of the junction capacitor (11).

Abstract: The strength of adhesion between two layers is evaluated by applying a series of laser shocks directly to the surface of one of the layers. Adhesion strength is determined based on the wavelength and energy of the laser pulse creating the shock which causes rupture of the interface between the two layers.

Abstract: The strength of adhesion between two layers (1,2) is evaluated by applying a series of laser shocks directly to the surface of one (1) of the layers. Adhesion strength is determined based on the wavelength (?2) and energy (e2) of the laser pulse (L2) creating the shock which causes rupture of the interface (3) between the two layers (1,2).

Abstract: The invention provides a method and a device for determining the temperature of a semiconductor substrate. A resonance circuit (110) is provided on the semiconductor substrate and is formed by a junction capacitor (11) and an inductor (12). The substrate is placed on a holder and the with electromagnetic energy of an electromagnetic field (5) generated by a radiation device (200). A circuit (110) is determined by detecting an effect of the resonance circuit (110) on the irradiated temperature of the semiconductor substrate is determined as a function of the resonance frequency. The method and device according to the invention provide for a more accurate determination of the temperature of the semiconductor substrate due to an increased sensitivity to the temperature of the junction capacitor (11).