Patents by Inventor Jean-Pierre Besselere

Jean-Pierre Besselere has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

Growth of crystalline rods of gallium arsenide in a crucible of specially treated fibrous silicon dioxide

Patent number: 4169755

Abstract: A method of manufacturing a rod of crystalline material in a crucible formed at least partly by a fabric of refractory fibrous material.Prior to its use the crucible is subjected to a preparatory treatment consisting mainly of wetting the inner face by means of gallium.Application: Manufacture of rods of semiconductor material.

Type: Grant

Filed: March 14, 1978

Date of Patent: October 2, 1979

Assignee: U.S. Philips Corporation

Inventor: Jean-Pierre Besselere
Method of providing a layer of solid material on a substrate in which liquid from which the solid material can be formed, is spread over the substrate surface

Patent number: 4124411

Abstract: A method of providing a layer of solid material, in particular semiconductor material, in which drops of a liquid from which the solid material is deposited, is dropped and spread on a flat surface which is given a rotating movement and also another periodic movement, changing the position of the plane of the substrate surface.

Type: Grant

Filed: September 2, 1976

Date of Patent: November 7, 1978

Assignee: U.S. Philips Corporation

Inventors: Johannes Meuleman, Jean-Pierre Besselere
Making rod-shaped single crystals by horizontal solidifaction from a melt using transversally asymmetric trough-shaped resistance heater having transverse half turns

Patent number: 3984280

Abstract: Rod shaped monocrystals are formed by causing monocrystalline deposition to take place in that body from a melt formed by heating a longitudinal section of that body with individual trough shaped heating elements.

Type: Grant

Filed: August 11, 1975

Date of Patent: October 5, 1976

Assignee: U.S. Philips Corporation

Inventors: Jean-Pierre Besselere, Bernard Lambert

Growth of crystalline rods of gallium arsenide in a crucible of specially treated fibrous silicon dioxide

Method of providing a layer of solid material on a substrate in which liquid from which the solid material can be formed, is spread over the substrate surface

Making rod-shaped single crystals by horizontal solidifaction from a melt using transversally asymmetric trough-shaped resistance heater having transverse half turns