Patents by Inventor Jean-Pierre Carrere
Jean-Pierre Carrere has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11901278Abstract: A first circuit structure of an electronic IC device includes comprises light-sensitive optical circuit components. A second circuit structure of the electronic IC device includes an electronic circuit component and an electrically-conductive layer extending between and at a distance from the optical circuit components and the electronic circuit component. Electrical connections link the optical circuit components and the electronic circuit component. These electrical connections are formed in holes which pass through dielectric layers and the intermediate conductive layer. Electrical insulation rings between the electrical connections and the conductive layer are provided which surround the electrical connections and have a thickness equal to a thickness of the conductive layer.Type: GrantFiled: January 11, 2023Date of Patent: February 13, 2024Assignee: STMicroelectronics (Crolles 2) SASInventors: Jean-Pierre Carrere, Francois Guyader
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Patent number: 11581249Abstract: A first circuit structure of an electronic IC device includes comprises light-sensitive optical circuit components. A second circuit structure of the electronic IC device includes an electronic circuit component and an electrically-conductive layer extending between and at a distance from the optical circuit components and the electronic circuit component. Electrical connections link the optical circuit components and the electronic circuit component. These electrical connections are formed in holes which pass through dielectric layers and the intermediate conductive layer. Electrical insulation rings between the electrical connections and the conductive layer are provided which surround the electrical connections and have a thickness equal to a thickness of the conductive layer.Type: GrantFiled: September 9, 2020Date of Patent: February 14, 2023Assignee: STMicroelectronics (Crolles 2) SASInventors: Jean-Pierre Carrere, Francois Guyader
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Patent number: 11562927Abstract: A silicon on insulator substrate includes a semiconductor bulk handle wafer, an insulating layer on said semiconductor bulk handle wafer and a semiconductor film on said insulating layer. An opening extends completely through the semiconductor film and insulating layer to expose a surface of the semiconductor bulk handle wafer. Epitaxial material fills the opening and extends on said semiconductor film, with the epitaxial material and semiconductor film forming a thick semiconductor film. A trench isolation surrounds a region of the thick semiconductor film to define an electrical contact made to the semiconductor bulk handle wafer through the opening.Type: GrantFiled: April 12, 2021Date of Patent: January 24, 2023Assignee: STMicroelectronics SAInventors: Didier Dutartre, Jean-Pierre Carrere, Jean-Luc Huguenin, Clement Pribat, Sarah Kuster
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Publication number: 20210233811Abstract: A silicon on insulator substrate includes a semiconductor bulk handle wafer, an insulating layer on said semiconductor bulk handle wafer and a semiconductor film on said insulating layer. An opening extends completely through the semiconductor film and insulating layer to expose a surface of the semiconductor bulk handle wafer. Epitaxial material fills the opening and extends on said semiconductor film, with the epitaxial material and semiconductor film forming a thick semiconductor film. A trench isolation surrounds a region of the thick semiconductor film to define an electrical contact made to the semiconductor bulk handle wafer through the opening.Type: ApplicationFiled: April 12, 2021Publication date: July 29, 2021Applicant: STMicroelectronics SAInventors: Didier DUTARTRE, Jean-Pierre CARRERE, Jean-Luc HUGUENIN, Clement PRIBAT, Sarah KUSTER
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Patent number: 10978340Abstract: A silicon on insulator substrate includes a semiconductor bulk handle wafer, an insulating layer on said semiconductor bulk handle wafer and a semiconductor film on said insulating layer. An opening extends completely through the semiconductor film and insulating layer to expose a surface of the semiconductor bulk handle wafer. Epitaxial material fills the opening and extends on said semiconductor film, with the epitaxial material and semiconductor film forming a thick semiconductor film. A trench isolation surrounds a region of the thick semiconductor film to define an electrical contact made to the semiconductor bulk handle wafer through the opening.Type: GrantFiled: April 15, 2019Date of Patent: April 13, 2021Assignees: STMicroelectronics (Crolles 2) SAS, STMicroelectronics SAInventors: Didier Dutartre, Jean-Pierre Carrere, Jean-Luc Huguenin, Clement Pribat, Sarah Kuster
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Publication number: 20210074618Abstract: A first circuit structure of an electronic IC device includes comprises light-sensitive optical circuit components. A second circuit structure of the electronic IC device includes an electronic circuit component and an electrically-conductive layer extending between and at a distance from the optical circuit components and the electronic circuit component. Electrical connections link the optical circuit components and the electronic circuit component. These electrical connections are formed in holes which pass through dielectric layers and the intermediate conductive layer. Electrical insulation rings between the electrical connections and the conductive layer are provided which surround the electrical connections and have a thickness equal to a thickness of the conductive layer.Type: ApplicationFiled: September 9, 2020Publication date: March 11, 2021Applicant: STMicroelectronics (Crolles 2) SASInventors: Jean-Pierre CARRERE, Francois GUYADER
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Patent number: 10551064Abstract: An annular wall of a combustion chamber of a turbine engine including: a cold side and a hot side; plural dilution holes to allow circulating air of the cold side to enter the hot side for dilution of an air/fuel mixture; plural cooling orifices to allow the circulating air of the cold side to enter the hot side to form a film of cooling air along the annular wall, the cooling orifices distributed spaced axially from one another and with geometric axes inclined, in an axial direction of flow of combustion gases, by an inclination angle relative to a normal to the annular wall; plural additional cooling orifices arranged directly downstream of the dilution holes and distributed spaced axially from one another, with geometric axes arranged in a plane perpendicular to the axial direction and inclined by an angle of inclination relative to a normal to the annular wall.Type: GrantFiled: October 25, 2012Date of Patent: February 4, 2020Assignees: SAFRAN AIRCRAFT ENGINES, SAFRAN HELICOPTER ENGINESInventors: Matthieu Francois Rullaud, Bernard Joseph Jean-Pierre Carrere, Hubert Pascal Verdier
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Publication number: 20190244857Abstract: A silicon on insulator substrate includes a semiconductor bulk handle wafer, an insulating layer on said semiconductor bulk handle wafer and a semiconductor film on said insulating layer. An opening extends completely through the semiconductor film and insulating layer to expose a surface of the semiconductor bulk handle wafer. Epitaxial material fills the opening and extends on said semiconductor film, with the epitaxial material and semiconductor film forming a thick semiconductor film. A trench isolation surrounds a region of the thick semiconductor film to define an electrical contact made to the semiconductor bulk handle wafer through the opening.Type: ApplicationFiled: April 15, 2019Publication date: August 8, 2019Applicants: STMicroelectronics (Crolles 2) SAS, STMicroelectronics SAInventors: Didier DUTARTRE, Jean-Pierre CARRERE, Jean-Luc HUGUENIN, Clement PRIBAT, Sarah KUSTER
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Patent number: 10262898Abstract: A silicon on insulator substrate includes a semiconductor bulk handle wafer, an insulating layer on said semiconductor bulk handle wafer and a semiconductor film on said insulating layer. An opening extends completely through the semiconductor film and insulating layer to expose a surface of the semiconductor bulk handle wafer. Epitaxial material fills the opening and extends on said semiconductor film, with the epitaxial material and semiconductor film forming a thick semiconductor film. A trench isolation surrounds a region of the thick semiconductor film to define an electrical contact made to the semiconductor bulk handle wafer through the opening.Type: GrantFiled: April 7, 2016Date of Patent: April 16, 2019Assignees: STMicroelectronics SA, STMicroelectronics (Crolles 2) SASInventors: Didier Dutartre, Jean-Pierre Carrere, Jean-Luc Huguenin, Clement Pribat, Sarah Kuster
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Patent number: 10054056Abstract: A turbine engine combustion assembly including a casing, a combustion chamber, and at least one fuel injector. The combustion chamber includes an internal wall and an external wall extending one inside the other and connected by an annular chamber base wall. The external wall of the chamber is secured to an annular external wall of the casing. The injector is attached to the annular external wall of the casing and includes a fuel ignition enclosure extending inside the casing successively through openings in the casing wall and in the external wall before opening into the chamber. At least one wall of the ignition enclosure extending between the casing wall and the combustion chamber wall includes at least one air intake port. The external wall of the combustion chamber is solidly connected to a device for plugging the air intake port according to a thermal expansion state of the combustion chamber.Type: GrantFiled: September 17, 2013Date of Patent: August 21, 2018Assignee: SAFRAN HELICOPTER ENGINESInventor: Bernard Joseph Jean Pierre Carrere
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Publication number: 20170294379Abstract: A silicon on insulator substrate includes a semiconductor bulk handle wafer, an insulating layer on said semiconductor bulk handle wafer and a semiconductor film on said insulating layer. An opening extends completely through the semiconductor film and insulating layer to expose a surface of the semiconductor bulk handle wafer. Epitaxial material fills the opening and extends on said semiconductor film, with the epitaxial material and semiconductor film forming a thick semiconductor film. A trench isolation surrounds a region of the thick semiconductor film to define an electrical contact made to the semiconductor bulk handle wafer through the opening.Type: ApplicationFiled: April 7, 2016Publication date: October 12, 2017Applicants: STMicroelectronics SA, STMicroelectronics (Crolles 2) SASInventors: Didier Dutartre, Jean-Pierre Carrere, Jean-Luc Huguenin, Clement Pribat, Sarah Kuster
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Patent number: 9534539Abstract: A device for a turbomachine chamber injector, including a conduit having at least a first opening, and a second opening (4), a blocking system for blocking the conduit, making it possible to regulate the passage of fluids into the conduit, the blocking system being configured to allow fuel to flow from the first opening to the second opening only from a first pressure of the fuel, for the passage of a supply of fuel, and allow air to flow from the second opening to the first opening only from a second pressure of the air, for the passage of purge air, the second pressure being greater than the first pressure.Type: GrantFiled: September 16, 2013Date of Patent: January 3, 2017Assignee: TURBOMECAInventor: Bernard Joseph Jean Pierre Carrere
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Patent number: 9506652Abstract: A combustion chamber, for example for a turbine engine, presenting an inner annular wall, an outer annular wall, and a pierced annular chamber end wall extending around an axis, the chamber end wall including at least one opening receiving a fuel injector, the opening being substantially centered on a circular line defining a first chamber end wall portion extending radially between the circular line and the inner annular wall, and a second chamber end wall portion extending radially between the circular line and the outer annular wall. First and second channels are inclined relative to a normal vector normal to the chamber end wall while extending tangentially, the first channels arranged to provide a flow of air in a first rotary direction, the second channels arranged to provide a flow of air in a second rotary direction opposite to the first rotary direction.Type: GrantFiled: January 11, 2011Date of Patent: November 29, 2016Assignee: TURBOMECAInventors: Bernard Joseph Jean-Pierre Carrere, Jean-Marc Dubourdieu-Rayrot, Lorenzo Huacan Hernandez, Robert Serrot-Gracie
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Patent number: 9347667Abstract: A starting injector usable in all flight modes without additional cost or weight. The starting injector includes a dual fuel circuit and an air circuit. An injector for a combustion chamber of a gas turbine includes a dual fuel injection circuit including a starting fuel circuit for ignition and then for all the flight modes, and a main fuel circuit for all the flight modes after starting. The circuits include parallel pipes in a common tube having an axis. The pipe of the starting circuit is substantially in communication with a center of a spherical injector body. At the end, the pipe accommodates an injection manifold coupled to a central channel passing through a central wall of a swirler. The pipe of the main circuit is in communication with an annular channel opposite jet channels. An air circuit is guided between two portions shaped as concentric spheres.Type: GrantFiled: January 27, 2012Date of Patent: May 24, 2016Assignee: TURBOMECAInventors: Bernard Joseph Jean Pierre Carrere, Jean-Luc Dabat
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Patent number: 9224775Abstract: An integrated circuit includes a back side illuminated image sensor formed by a substrate supporting at least one pixel, an interconnect part situated above a front side of the substrate and an anti-reflective layer situated above a back side of the substrate. The anti-reflective layer may be formed of a silicon nitride layer. An additional layer is situated above the anti-reflective layer. The additional layer is formed of one of amorphous silicon nitride or hydrogenated amorphous silicon nitride, in which the ratio of the number of silicon atoms per cubic centimeter to the number of nitrogen atoms per cubic centimeter is greater than 0.7.Type: GrantFiled: July 30, 2014Date of Patent: December 29, 2015Assignees: STMicroelectronics (Crolles 2) SAS, Commissariat A L'Energie Atomique et aux Energies AlternativesInventors: Jean-Pierre Carrere, Patrick Gros D'Aillon, Stephane Allegret-Maret, Jean-Pierre Oddou
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Patent number: 9188338Abstract: A low-cost combustion chamber injector device that has sturdier construction and is safer for use. Parts are configured specifically to be nested, to dispense with welding between the cellular parts. The device for injecting a fuel-air mix includes, centered on a single axis, a swirl chamber including at least two annular air suction parts, a centering guide, and a retainer ring. The annular parts have cellular conduits connecting to axial inner and outer Venturi tubes. The parts are coaxially mounted, the inner part being configured to be self-centered in the outer part by engagement of the axial and radial walls and then, after assembly, the outer part is welded to the retainer ring and to the inner part in a single radial plane.Type: GrantFiled: January 18, 2011Date of Patent: November 17, 2015Assignee: TURBOMECAInventors: Patrick Berteau, Bernard Joseph Jean Pierre Carrere, Lorenzo Huacan Hernandez, Ludovic Andre Joel Naudot
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Publication number: 20150260106Abstract: A device for a turbomachine chamber injector, including a conduit having at least a first opening, and a second opening (4), a blocking system for blocking the conduit, making it possible to regulate the passage of fluids into the conduit, the blocking system being configured to allow fuel to flow from the first opening to the second opening only from a first pressure of the fuel, for the passage of a supply of fuel, and allow air to flow from the second opening to the first opening only from a second pressure of the air, for the passage of purge air, the second pressure being greater than the first pressure.Type: ApplicationFiled: September 16, 2013Publication date: September 17, 2015Applicant: TURBOMECAInventor: Bernard Joseph Jean Pierre Carrere
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Publication number: 20150247459Abstract: A turbine engine combustion assembly including a casing, a combustion chamber, and at least one fuel injector. The combustion chamber includes an internal wall and an external wall extending one inside the other and connected by an annular chamber base wall. The external wall of the chamber is secured to an annular external wall of the casing. The injector is attached to the annular external wall of the casing and includes a fuel ignition enclosure extending inside the casing successively through openings in the casing wall and in the external wall before opening into the chamber. At least one wall of the ignition enclosure extending between the casing wall and the combustion chamber wall includes at least one air intake port. The external wall of the combustion chamber is solidly connected to a device for plugging the air intake port according to a thermal expansion state of the combustion chamber.Type: ApplicationFiled: September 17, 2013Publication date: September 3, 2015Applicant: TURBOMECAInventor: Bernard Joseph Jean Pierre Carrere
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Publication number: 20150035106Abstract: An integrated circuit includes a back side illuminated image sensor formed by a substrate supporting at least one pixel, an interconnect part situated above a front side of the substrate and an anti-reflective layer situated above a back side of the substrate. The anti-reflective layer may be formed of a silicon nitride layer. An additional layer is situated above the anti-reflective layer. The additional layer is formed of one of amorphous silicon nitride or hydrogenated amorphous silicon nitride, in which the ratio of the number of silicon atoms per cubic centimeter to the number of nitrogen atoms per cubic centimeter is greater than 0.7.Type: ApplicationFiled: July 30, 2014Publication date: February 5, 2015Applicants: STMicroelectronics (Crolles 2) SAS, Commissariat A L'Energie Atomique et aux Energies AlternativesInventors: Jean-Pierre Carrere, Patrick Gros D'Aillon, Stephane Allegret-Maret, Jean-Pierre Oddou
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Publication number: 20140260257Abstract: An annular wall of a combustion chamber of a turbine engine including: a cold side and a hot side; plural dilution holes to allow circulating air of the cold side to enter the hot side for dilution of an air/fuel mixture; plural cooling orifices to allow the circulating air of the cold side to enter the hot side to form a film of cooling air along the annular wall, the cooling orifices distributed spaced axially from one another and with geometric axes inclined, in an axial direction of flow of combustion gases, by an inclination angle relative to a normal to the annular wall; plural additional cooling orifices arranged directly downstream of the dilution holes and distributed spaced axially from one another, with geometric axes arranged in a plane perpendicular to the axial direction and inclined by an angle of inclination relative to a normal to the annular wall.Type: ApplicationFiled: October 25, 2012Publication date: September 18, 2014Applicants: SNECMA, TURBOMECAInventors: Matthieu Francois Rullaud, Bernard Joseph, Jean-Pierre Carrere, Hurbert Pascal Verdier