Abstract: Substrates for microelectronic radiofrequency devices may include a substrate comprising a semiconductor material. Trenches may be located in an upper surface of the substrate, at least some of the trenches including a filler material located within the respective trench. A resistivity of the filler material may be 10 kOhms·cm or greater. A piezoelectric material may be located on or above the upper surface of the substrate. Methods of making substrates for microelectronic radiofrequency devices may involve forming trenches in an upper surface of a substrate including a semiconductor material. A filler material may be placed in at least some of the trenches, and a piezoelectric material may be placed on or above the upper surface of the substrate.

Abstract: A structure for an RF device provided with a semiconductor region coated with a heterogeneous dielectric region, the heterogeneous dielectric region including, in at least one first direction parallel to a main plane of the substrate, an alternation of first areas made of a first dielectric material with positive fixed charges and of second dielectric areas made of a second dielectric material with negative fixed charge in order to create an alternation of polarity allowing preventing the formation of a parasitic conduction layer in the semiconductor region.

Abstract: A substrate has a front side including an electrical circuit and a rear side including an exposed zone that faces the electrical circuit. In an electrochemical treatment step, an electrical potential is laterally applied at least to the exposed zone of the rear side of the substrate, while the exposed zone is in contact with a chemically reactive substance. The electrical potential causes a lateral flow of electrical current at least in the exposed zone of the substrate. The lateral flow of current and the chemically reactive substance alter the substrate in at least the exposed zone.

Abstract: Substrates for microelectronic radiofrequency devices may include a substrate comprising a semiconductor material. Trenches may be located in an upper surface of the substrate, at least some of the trenches including a filler material located within the respective trench. A resistivity of the filler material may be 10 kOhms·cm or greater. A piezoelectric material may be located on or above the upper surface of the substrate. Methods of making substrates for microelectronic radiofrequency devices may involve forming trenches in an upper surface of a substrate including a semiconductor material. A filler material may be placed in at least some of the trenches, and a piezoelectric material may be placed on or above the upper surface of the substrate.

Abstract: Substrates for microelectronic radiofrequency devices may include a substrate comprising a semiconductor material. Trenches may be located in an upper surface of the substrate, at least some of the trenches including a filler material located within the respective trench. A resistivity of the filler material may be 10 kOhms·cm or greater. A piezoelectric material may be located on or above the upper surface of the substrate. Methods of making substrates for microelectronic radiofrequency devices may involve forming trenches in an upper surface of a substrate including a semiconductor material. A filler material may be placed in at least some of the trenches, and a piezoelectric material may be placed on or above the upper surface of the substrate.

Abstract: An integrated circuit device includes a semiconductor substrate having a resistivity of at least 100 ?·cm. An electrically insulating layer contacts the semiconductor substrate. The electrically insulating layer is susceptible of inducing in the semiconductor substrate a parasitic surface conduction layer that interfaces with the electrically insulating layer. An electrical circuit is located on the electrically insulating layer. The electrical circuit includes a section capable of inducing an electrical field in the semiconductor substrate. The integrated circuit device includes a depletion-inducing junction of which at least a portion is comprised in the semiconductor substrate. The depletion-inducing junction can autonomously induce in the semiconductor substrate a depleted zone that interfaces with a section of the electrically insulating layer that lies in-between two sections of the electrical circuit.

Abstract: Substrates for microelectronic radiofrequency devices may include a substrate comprising a semiconductor material. Trenches may be located in an upper surface of the substrate, at least some of the trenches including a filler material located within the respective trench. A resistivity of the filler material may be 10 kOhms·cm or greater. A piezoelectric material may be located on or above the upper surface of the substrate. Methods of making substrates for microelectronic radiofrequency devices may involve forming trenches in an upper surface of a substrate including a semiconductor material. A filler material may be placed in at least some of the trenches, and a piezoelectric material may be placed on or above the upper surface of the substrate.

Abstract: An integrated circuit device includes a semiconductor substrate having a resistivity of at least 100 ?·cm. An electrically insulating layer contacts the semiconductor substrate. The electrically insulating layer is susceptible of inducing in the semiconductor substrate a parasitic surface conduction layer that interfaces with the electrically insulating layer. An electrical circuit is located on the electrically insulating layer. The electrical circuit includes a section capable of inducing an electrical field in the semiconductor substrate. The integrated circuit device includes a depletion-inducing junction of which at least a portion is comprised in the semiconductor substrate. The depletion-inducing junction can autonomously induce in the semiconductor substrate a depleted zone that interfaces with a section of the electrically insulating layer that lies in-between two sections of the electrical circuit.

Abstract: A substrate for microelectronic radiofrequency devices includes a carrier substrate made of a first semiconductor material having a resistivity higher than 500 ohms-cm; a plurality of trenches in the carrier substrate, which trenches are filled with a second material, and defining on a first side of the carrier substrate a plurality of first zones made of a first material and at least one second zone made of a second material. The second material has a resistivity higher than 10 kohms-cm, and the first zones have a maximum dimension smaller than 10 microns and are insulated from one another by the second zone.

Abstract: A substrate has a front side including an electrical circuit and a rear side including an exposed zone that faces the electrical circuit. In an electrochemical treatment step, an electrical potential is laterally applied at least to the exposed zone of the rear side of the substrate, while the exposed zone is in contact with a chemically reactive substance. The electrical potential causes a lateral flow of electrical current at least in the exposed zone of the substrate. The lateral flow of current and the chemically reactive substance alter the substrate in at least the exposed zone.

Abstract: A method for minimizing harmonic distortion and/or intermodulation distortion of a radiofrequency signal propagating in a radiofrequency circuit formed on a semiconductor substrate coated with an electrically insulating layer, wherein a curve representing the distortion as a function of a power of the input or output signal exhibits a trough around a given power (PDip), the method comprises applying, between the radiofrequency circuit and the semiconductor substrate, an electrical potential difference (VGB) chosen so as to move the trough toward a given operating power of the radiofrequency circuit.

Abstract: A method for minimizing harmonic distortion and/or intermodulation distortion of a radiofrequency signal propagating in a radiofrequency circuit formed on a semiconductor substrate coated with an electrically insulating layer, wherein a curve representing the distortion as a function of a power of the input or output signal exhibits a trough around a given power (PDip), the method comprises applying, between the radiofrequency circuit and the semiconductor substrate, an electrical potential difference (VGB) chosen so as to move the trough toward a given operating power of the radiofrequency circuit.

Abstract: The disclosure relates to a device for measuring an electrical characteristic of a substrate comprising a support made of a dielectric material having a bearing surface, the support comprising an electrical test structure having a contact surface flush with the bearing surface of the support, the bearing surface of the support and the contact surface of the electrical test structure being suitable for coming into close contact with a substrate. The measurement device also comprises at least one connection bump contact formed on another surface of the support and electrically linked to the electrical test structure. This disclosure also relates to a system for characterizing a substrate and a method for measuring a characteristic of a substrate employing the measurement device.

Abstract: A substrate for microelectronic radiofrequency devices includes a carrier substrate made of a first semiconductor material having a resistivity higher than 500 ohms·cm; a plurality of trenches in the carrier substrate, which trenches are filled with a second material, and defining on a first side of the carrier substrate a plurality of first zones made of a first material and at least one second zone made of a second material. The second material has a resistivity higher than 10 kohms·cm, and the first zones have a maximum dimension smaller than 10 microns and are insulated from one another by the second zone.

Abstract: The disclosure relates to a device for measuring an electrical characteristic of a substrate comprising a support made of a dielectric material having a bearing surface, the support comprising an electrical test structure having a contact surface flush with the bearing surface of the support, the bearing surface of the support and the contact surface of the electrical test structure being suitable for coming into close contact with a substrate. The measurement device also comprises at least one connection bump contact formed on another surface of the support and electrically linked to the electrical test structure. This disclosure also relates to a system for characterizing a substrate and a method for measuring a characteristic of a substrate employing the measurement device.

Abstract: This invention provides an internal stress actuated micro- or nano-machine for measuring mechanical and/or electrical properties, e.g. traction measurement, compression measurement or shear measurement, on micro-scale and nano-scale films or multi-layers of materials such as metallic materials, carbon-based materials and silicon-base materials. The device of the invention has applications in materials production industry, as well as in micro-electronics and for surface treatments and functionalization.

Abstract: This invention provides a method and device for imposing and determining mechanical stress and/or strain, on micro-scale and nano-scale beams, films or multi-layers of materials such as metallic materials, polymer materials, ceramic materials, carbon-based materials and silicon-based materials using a set of micro- or nano-machines. The present invention also provides methods to derive and modify various properties or state of such nano- or microstructures, among others mechanical properties, and to measure the external stimulus that they are subjected to.

Abstract: The invention relates to a process for manufacturing a multilayer structure made from semiconducting materials that include an active layer, a support layer and an electrically insulating layer between the active layer and the support layer. The process includes the step of modifying the density of carrier traps or the electrical charge within the electrically insulating layer in order to minimize electrical losses in the structure support layer.

Abstract: The invention relates to a process for manufacturing a multilayer structure made from semiconducting materials that include an active layer, a support layer and an electrically insulating layer between the active layer and the support layer. The process includes the step of modifying the density of carrier traps or the electrical charge within the electrically insulating layer in order to minimize electrical losses in the structure support layer.

Abstract: The present invention relates to a method for fabrication of semiconductor devices, in particular but not limited to the fabrication of double gate transistors of the type Gate-All-Around or “semiconductor-on-nothing” transistors and devices. A method according to the present invention comprises the steps of: (a) forming a trench in a least a first substrate, (b) transferring semiconductor material over the trench to form a semiconductor bridge across the trench, the semiconductor bridge defining an active area. The bridge may be free to oscillate above the trench without using removing a sacrificial layer. The method may also include the steps of: (c) forming a gate insulator on the semiconductor bridge, and (d) applying gate material on the gate insulator, thus forming a gate.