Abstract: A method of optical coupling between an optical fiber and an optoelectronic component for an optical-fiber telecommunications link is applied to the fabrication of a transmitting and/or receiving optoelectronic head. In a semiconductor wafer having a p.sup.- layer and a p.sup.+ layer, chemical etching of the p.sup.- layer is followed by n-type doping of an n.sup.+ layer at the bottom of the cavity and on the edge of the cavity. Highly accurate positioning of the optical fiber is thus ensured as well as excellent coupling between the fiber and the light-emitting diode or photodiode thus provided.

Abstract: A sealed enclosing system for coupling an emitting or receiving optoelectronic device with an optical fibre. A metal cap has an optical fibre passing therethrough in a sealed manner. A bellows tube is mounted on a base and thus provides an elastic element for connecting the fibre to an optoelectronic diode mounted on the tube. The seal is completed by a welding of the cap to the base and by passing electric supply connections through the passage ways formed by glass beads.

Abstract: A process intended for avoiding the "flip chip bonding" technique, well known for planar diodes, is provided. It is further applicable to mesa diodes and planar transistors. It comprises an essential step: the lapping of the substrate up to reduce its thickness to the same order of magnitude as the upper active layer of a semiconductor device, thus facilitating the cooling of the device through the substrate towards a heat sink. This essential step is made possible by virtue of a preliminary bonding on the upper layer of the semiconductor device of a block of silicon. According to a first alternative of the invention the block is finally eliminated and the device is a conventional one with a very thin substrate. According to a second alternative of the invention, the block is retained and lapped after addition of the heat sink, then metalized to provide a secondary way to the thermal flux.