Patents by Inventor Jed E. Davidow

Jed E. Davidow has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Film thickness control using spectral interferometry
    Patent number: 6589869
    Abstract: A process for controlling a substrate processing operation such as a plasma etch operation. One embodiment of the method of the present invention forms a plasma within a substrate processing chamber to etch a wafer disposed within the chamber. The plasma emission is used by the process as a broadband light source. During the plasma etch process, a plurality of wavelengths of radiation reflected from the surface of the wafer being etched are measured with a spectrometer. These measurements are then compared using pattern recognition techniques to previous measurements taken during a previous plasma etch operation. Certain embodiments of the invention use principal component analysis (PCA) techniques to perform pattern recognition while other embodiment use programmed neural net pattern recognition techniques.
    Type: Grant
    Filed: April 23, 2002
    Date of Patent: July 8, 2003
    Assignee: Applied Materials, Inc.
    Inventors: Moshe Sarfaty, Lalitha S. Balasubramhanya, Jed E. Davidow, Dimitris P. Lymberopoulos
  • Film thickness control using spectral interferometry
    Publication number: 20020119660
    Abstract: A process for controlling a substrate processing operation such as a plasma etch operation. One embodiment of the method of the present invention forms a plasma within a substrate processing chamber to etch a wafer disposed within the chamber. The plasma emission is used by the process as a broadband light source. During the plasma etch process, a plurality of wavelengths of radiation reflected from the surface of the wafer being etched are measured with a spectrometer. These measurements are then compared using pattern recognition techniques to previous measurements taken during a previous plasma etch operation. Certain embodiments of the invention use principal component analysis (PCA) techniques to perform pattern recognition while other embodiment use programmed neural net pattern recognition techniques.
    Type: Application
    Filed: April 23, 2002
    Publication date: August 29, 2002
    Applicant: Applied Materials, Inc.
    Inventors: Moshe Sarfaty, Lalitha S. Balasubramhanya, Jed E. Davidow, Dimitris P. Lymberopoulos
  • Film thickness control using spectral interferometry
    Patent number: 6413867
    Abstract: A process for controlling a substrate processing operation such as a plasma etch operation. One embodiment of the method of the present invention forms a plasma within a substrate processing chamber to etch a wafer disposed within the chamber. The plasma emission is used by the process as a broadband light source. During the plasma etch process, a plurality of wavelengths of radiation reflected from the surface of the wafer being etched are measured with a spectrometer. These measurements are then compared using pattern recognition techniques to previous measurements taken during a previous plasma etch operation. Certain embodiments of the invention use principal component analysis (PCA) techniques to perform pattern recognition while other embodiment use programmed neural net pattern recognition techniques.
    Type: Grant
    Filed: December 23, 1999
    Date of Patent: July 2, 2002
    Assignee: Applied Materials, Inc.
    Inventors: Moshe Sarfaty, Lalitha S. Balasubramhanya, Jed E. Davidow, Dimitris P. Lymberopoulos